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Infineon Technologies CY7S1061GE-10ZXIT
- Part No.:
- CY7S1061GE-10ZXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
CY7S1061GE-10ZXIT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:2,883
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Product details
Overview
CY7S1061GE-10ZXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1 M × 16) CMOS static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ deep-sleep mode, and TTL-compatible I/O. It delivers 10 ns access time, 22 µA max deep-sleep current, and operates across three voltage ranges: 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V. Used in industrial control systems requiring reliable data retention and low-power standby.
For engineers reviewing the CY7S1061GE-10ZXIT datasheet, CY7S1061GE-10ZXIT pinout, CY7S1061GE-10ZXIT application, or CY7S1061GE-10ZXIT equivalent, key selection criteria include ECC-enabled single-bit error correction, ERR pin assertion timing during read cycles, Deep Sleep (DS) pin behavior, and compatibility with 48-ball VFBGA layout constraints in space-constrained embedded designs.
Technical Context
This SRAM implements a synchronous, byte-selectable memory architecture with dual chip enable logic (CE1/CE2) and independent byte write control via BHE/ BLE. Its ECC engine detects and corrects single-bit errors on-the-fly during read operations without automatic write-back - error status is signaled solely through the dedicated ERR output pin.
The device supports three distinct VCC operating windows and uses TTL-compatible input thresholds with CMOS-level output drive. Deep Sleep mode is activated by pulling DS low, reducing current to ≤22 µA while retaining data at 1.0 V, enabling battery-backed operation in industrial monitoring nodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 16 Mbit (1,048,576 × 16 bits) - supports full-word or byte-accessed storage for real-time firmware buffers. |
| Access time (tAA) | 10 ns - enables direct interface with 100 MHz microcontrollers without wait states. |
| Deep Sleep current (IDS) | ≤22 µA - allows multi-year operation on coin-cell batteries in remote sensor nodes. |
| Voltage ranges | 1.65–2.2 V / 2.2–3.6 V / 4.5–5.5 V - accommodates mixed-supply systems including legacy 5 V and modern low-voltage SoCs. |
| ECC capability | Single-bit error detection and correction per 16-bit word - improves system reliability without software overhead. |
| ERR pin function | Active-HIGH open-drain signal asserted during corrected read - enables hardware-triggered fault logging without polling. |
| Data retention voltage | 1.0 V - maintains stored contents during brown-out conditions below normal VCC minima. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address inputs | 20-bit address bus supporting full 1 M-word addressing; A16–A19 are NC in 48-ball variant per datasheet Figure 2. |
| I/O0–I/O15 | Bidirectional data bus | 16-bit parallel interface; high-impedance when CE/OE/BLE/BHE inactive - prevents bus contention. |
| WE | Write Enable | Active-LOW control for write cycles; sampled synchronously with address setup to define write window. |
| OE | Output Enable | Active-LOW control for read data output; independent of CE, enabling output gating during partial chip select. |
| CE / CE1 & CE2 | Chip Enable | Single CE (pin 32) in this variant; dual CE logic not used - simplifies control logic in single-chip systems. |
| BHE / BLE | Byte High/Low Enable | Independent 8-bit write control: BHE enables I/O8–I/O15, BLE enables I/O0–I/O7 - supports mixed-endian data writes. |
| DS | Deep Sleep input | Active-LOW entry into ultra-low-power retention mode; requires external pull-up and controlled deassertion for wake-up timing. |
| ERR | Error indication | Open-drain output asserted HIGH during ECC-corrected read; requires external pull-up resistor for proper logic level. |
| VCC / VSS | Power / Ground | Dual VCC pins (pins 47 & 48) and multiple VSS (pins 1, 13, 25, 37) - reduce IR drop and improve noise immunity in high-speed operation. |
Key Features
| Feature | Design Value |
|---|---|
| PowerSnooze™ Deep Sleep mode | Reduces current to ≤22 µA while retaining full 16-Mbit content at 1.0 V - eliminates need for external backup power circuitry. |
| Embedded ECC logic | Hardware-accelerated single-bit error correction per 16-bit word - removes software ECC overhead and latency in safety-critical reads. |
| Dedicated ERR pin | Asynchronous open-drain flag signaling corrected errors - enables immediate hardware response (e.g., interrupt assertion or log timestamping). |
| TTL-compatible I/O | Accepts standard 5 V-tolerant logic levels across all VCC ranges - simplifies interface with mixed-voltage microcontrollers and FPGAs. |
| Multi-range VCC support | Operates natively at 1.8 V, 3.0 V, or 5.0 V supply - avoids level-shifting components in heterogeneous power domain designs. |
Applications
| Industrial PLC Data Buffer | Medical Diagnostic Imaging Cache |
|---|---|
|
Use Scenario: Storing real-time sensor fusion outputs and configuration registers in programmable logic controllers deployed in factory automation environments. IC Role / Device Role / Timing Role: Primary volatile data buffer with ECC-protected storage for critical control state variables and firmware update staging. Use Value: Prevents silent data corruption in long-duration unattended operation; Deep Sleep mode extends runtime during AC power loss using supercapacitor hold-up. |
Use Scenario: Caching raw image frames from ultrasound or MRI front-end ADCs before compression and transmission to host processors. IC Role / Device Role / Timing Role: High-bandwidth, low-latency frame buffer interfacing directly with 100 MHz imaging ASICs via parallel 16-bit bus. Use Value: 10 ns access time eliminates pipeline stalls; ECC ensures pixel integrity during high-radiation clinical settings where soft errors may occur. |
| Railway Signaling Event Logger | Avionics Health Monitor Memory |
|
Use Scenario: Recording train position, speed, and signal status events in EN 5012x-certified onboard black box units operating across –40 °C to +85 °C. IC Role / Device Role / Timing Role: Nonvolatile-equivalent event storage with guaranteed 1.0 V data retention during extended power interruptions. Use Value: Eliminates need for external EEPROM wear-leveling; DS pin integration enables deterministic low-power logging during idle intervals. |
Use Scenario: Storing flight-critical health telemetry (engine parameters, sensor diagnostics) in DO-254-compliant avionics modules with strict FIT rate requirements. IC Role / Device Role / Timing Role: Safety-assured memory subsystem where ERR pin feeds into dual-lockstep monitor circuits for fault isolation. Use Value: Hardware ECC reduces uncorrectable error rate by >99% vs. standard SRAM; meets DAL-B failure probability targets for airborne systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM with ECC applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C31026B-10TIN | No embedded ECC; requires external error-checking logic; 10 ns access, 3.3 V only; 48-pin TSOP I package. | Lacks hardware error correction - increases FPGA resource usage and software complexity for safety validation. | Select only if cost sensitivity outweighs ECC requirement and system already implements software-based ECC. |
| IS61WV102416BLL-10MLI | 10 ns access, 3.3 V only, no ERR pin, no Deep Sleep mode; 48-pin TSOP I; lower standby current (25 µA) but no data retention below VCC. | Cannot retain data during brown-out; unsuitable for battery-backed logging or fail-safe contexts requiring 1.0 V retention. | Prefer for non-safety-critical consumer applications where power budget is tighter than reliability requirements. |
Compared with AS7C31026B-10TIN and IS61WV102416BLL-10MLI, CY7S1061GE-10ZXIT uniquely integrates ECC correction, ERR signaling, and 1.0 V data retention - making it the only option among the three qualified for industrial safety and mission-critical logging where silent data corruption must be eliminated at the hardware level.
Availability
CY7S1061GE-10ZXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging cache subsystems, and railway event logging requiring stable component supply across extended temperature and voltage ranges.
Supply support for CY7S1061GE-10ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with emphasis on reliability and industrial longevity.
CY7S1061GE-10ZXIT belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for high-reliability embedded systems needing hardware ECC, ultra-low-power sleep modes, and multi-voltage interoperability in harsh environments.
FAQ
Does CY7S1061GE-10ZXIT support automatic error correction write-back?
No. The device detects and corrects single-bit errors during read operations but does not perform automatic write-back to memory. The corrected data appears on I/O lines, and the ERR pin signals the event. System firmware must decide whether to re-write the corrected word based on application requirements and error frequency monitoring.
What is the function of the DS pin during normal operation?
The DS (Deep Sleep) pin must be held HIGH (≥VCC – 0.2 V) for normal read/write operation. Pulling DS LOW disables internal circuitry and places the device in data retention mode with ≤22 µA current draw. Wake-up occurs within tRC (recovery time) after DS returns HIGH, per datasheet Section "Deep-Sleep Mode Characteristics".
Can CY7S1061GE-10ZXIT operate at 2.5 V?
Yes. The device supports the 2.2 V to 3.6 V VCC range, and 2.5 V falls within that window. At 2.5 V, typical ICC is 90 mA and tAA remains 10 ns. DC electrical characteristics (VOH/VOL, VIH/VIL) are specified across sub-ranges, and 2.5 V aligns with the 2.2–2.7 V bin where VOH ≥ 2.0 V and VOL ≤ 0.4 V under load.
Is the ERR pin active during write cycles?
No. The ERR pin is asserted only during read cycles when an ECC-correctable single-bit error is detected and corrected in the accessed 16-bit word. It remains inactive (open-drain HIGH only when pulled up externally) during write operations, standby, or deep sleep - its behavior is strictly read-event-triggered.
CY7S1061GE-10ZXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
CY7S1061GE-10ZXIT FAQ
1.How can I place an order for CY7S1061GE-10ZXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7S1061GE-10ZXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7S1061GE-10ZXIT reliable?
The price and inventory of CY7S1061GE-10ZXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7S1061GE-10ZXIT is usually 5 days.
3.What payment methods are accepted for CY7S1061GE-10ZXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7S1061GE-10ZXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7S1061GE-10ZXIT?
CY7S1061GE-10ZXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7S1061GE-10ZXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7S1061GE-10ZXIT?
For technical support, including CY7S1061GE-10ZXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7S1061GE-10ZXIT requirements.
6.How does Aetrix verify that CY7S1061GE-10ZXIT is sourced from the original manufacturer or authorized distributors?
All CY7S1061GE-10ZXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7S1061GE-10ZXIT meets industry standards.
7.What is the process for return or replacement of CY7S1061GE-10ZXIT?
All CY7S1061GE-10ZXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7S1061GE-10ZXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7S1061GE-10ZXIT part is unused and in its original packaging.
Return procedure for CY7S1061GE-10ZXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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