Infineon Technologies CY7S1061GE30-10BVM

Overview

CY7S1061GE30-10BVM from Cypress Semiconductor is a military-grade 16-Mbit (1M × 16) CMOS static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ deep-sleep mode (IDS ≤ 45 µA), 10 ns access time, and dual-voltage operation (2.2 V–3.6 V). It serves as high-reliability data buffer or scratchpad memory in avionics control units requiring single-bit error correction and extended temperature operation (–55 °C to +125 °C).

For engineers reviewing the CY7S1061GE30-10BVM datasheet, CY7S1061GE30-10BVM pinout, CY7S1061GE30-10BVM application, or CY7S1061GE30-10BVM equivalent, key selection criteria include ECC-enabled reliability, ultra-low deep-sleep current, TTL-compatible I/O, ERR pin signaling, and 48-ball VFBGA packaging for high-density military PCBs.

Technical Context

This SRAM implements a synchronous, byte-selectable memory architecture with independent BHE/ BLE controls for upper/lower 8-bit writes and reads. Its ECC logic operates transparently during read cycles, detecting and correcting single-bit errors in accessed locations without software intervention.

The device supports three distinct power modes: active (ICC = 90 mA typ), standby (ISB2 = 20 mA typ), and deep sleep (IDS = 45 µA max), triggered by the DS pin. Data retention is guaranteed at 1.0 V across –55 °C to +125 °C, enabling fail-safe operation during brownout conditions.

Key Specifications

Pinout & Package

Package: 48-ball Very Fine Pitch Ball Grid Array (VFBGA), 6 × 8 mm, 1.0 mm height, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM with ECC applications.

Compared with IS61WV102416BLL-10TLI and MT28EW128ABA1HPC-0SIT, the CY7S1061GE30-10BVM uniquely delivers parallel-interface speed, hardware ECC transparency, and an ERR pin - making it the sole option for MIL-PRF-38535 Class K systems requiring both performance and fault-aware memory operation.

Availability

CY7S1061GE30-10BVM is available at Aetrix Electronics and suitable for avionics flight control units, tactical radio baseband processors, and missile guidance onboard computers requiring stable component supply under extended temperature and radiation-exposed conditions.

Supply support for CY7S1061GE30-10BVM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and extended-temperature qualification.

The CY7S1061GE series targets military and space applications demanding ECC-enabled SRAM with ultra-low deep-sleep power and guaranteed operation from –55 °C to +125 °C - bridging the gap between commercial speed and mil-spec robustness.

FAQ

Does CY7S1061GE30-10BVM support automatic write-back after ECC correction?

No. The device detects and corrects single-bit errors during read operations but does not perform automatic write-back to the memory array. Corrected data is presented on the I/O bus, and any persistent correction requires external logic or firmware action. This behavior is explicitly documented in the datasheet footnote 2 and confirmed in AN89371.

What is the function of the DS pin during normal operation?

The DS (Deep Sleep) pin must be held HIGH (≥ VCC – 0.2 V) for normal read/write operation. When driven LOW, the device immediately enters deep-sleep mode: all outputs go high-impedance, internal clocks halt, and current drops to ≤45 µA while retaining data at 1.0 V. Recovery requires DS HIGH followed by tR (10 ns for VCC > 2.2 V) before valid access.

How does the ERR pin behave during uncorrectable multi-bit errors?

The ERR pin is asserted only for single-bit errors that are successfully corrected. It remains inactive (high-impedance or LOW depending on external pull) during multi-bit errors, which are undetected and uncorrected. The device provides no indication of uncorrectable errors - this limitation is inherent to standard Hamming-code ECC implementation and stated in the functional description.

Can CY7S1061GE30-10BVM operate with mixed voltage domains (e.g., 1.8 V I/O, 3.3 V core)?

No. The device uses a single VCC supply (2.2 V–3.6 V) for both core logic and I/O buffers. All inputs and outputs are TTL-compatible within the selected VCC range, and no separate VIO or multi-rail support is provided. Level-shifting circuitry is required when interfacing with 1.8 V controllers.