Infineon Technologies CY7S1061GE30-10BVXI

Overview

CY7S1061GE30-10BVXI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1 M × 16) CMOS static RAM with embedded ECC, PowerSnooze™ deep-sleep mode, and TTL-compatible I/O. It delivers 10 ns access time, operates across 2.2 V–3.6 V, draws ≤22 µA in Deep Sleep, and features an ERR pin for single-bit error detection/correction-used in industrial control memory buffers requiring high reliability and low-power retention.

For engineers reviewing the CY7S1061GE30-10BVXI datasheet, CY7S1061GE30-10BVXI pinout, CY7S1061GE30-10BVXI application, or CY7S1061GE30-10BVXI equivalent, key selection criteria include its dual-chip-enable interface, byte-write control via BHE/BLE, 1.0-V data retention capability, and VFBGA-48 package compatibility with space-constrained embedded systems.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive fast-access memory array with on-die ECC logic that detects and corrects single-bit errors during read cycles-signaled via the dedicated ERR output. It supports three voltage ranges, but CY7S1061GE30-10BVXI is specifically rated for 2.2 V–3.6 V operation with 10 ns tAA and 90 mA typical ICC at fMAX.

The device uses dual chip enable (CE1/CE2) logic for hierarchical memory mapping and includes independent byte-enable controls (BHE/BLE) to support 8-bit sub-word writes. Deep Sleep activation via the DS pin reduces current to ≤22 µA while maintaining 1.0-V data retention-enabling battery-backed operation without external refresh circuitry.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM with ECC and low-power sleep applications.

Compared with AS7C31026B-10TIN and IS61WV102416BLL-10MLI, CY7S1061GE30-10BVXI uniquely integrates ECC correction, 1.0-V retention, and ≤22 µA Deep Sleep in a VFBGA-48 package-making it the only option meeting IEC 61508 SIL-2 memory integrity requirements without external components.

Availability

CY7S1061GE30-10BVXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging cache subsystems, and avionics data loggers requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY7S1061GE30-10BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions with emphasis on reliability and industrial-grade performance.

CY7S1061GE30-10BVXI belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for high-integrity embedded systems needing fast, low-power, ECC-protected memory in compact packages-targeting industrial automation, medical electronics, and aerospace data acquisition.

FAQ

Does CY7S1061GE30-10BVXI support automatic error correction without host intervention?

Yes. The device performs single-bit error detection and correction autonomously during every read cycle using on-die ECC logic. No software or external controller action is required-the corrected data appears on I/O lines, and the ERR pin pulses to indicate correction occurred. It does not support automatic write-back of corrected data to memory cells.

What is the functional difference between CE1/CE2 and single CE operation?

CY7S1061GE30-10BVXI uses dual CE inputs (CE1 LOW + CE2 HIGH) for device selection. This differs from single-CE variants: CE1/CE2 enables hierarchical memory decoding in multi-chip systems, allowing one controller to manage multiple SRAMs via address-based chip select logic-reducing external decoder count and improving routing efficiency.

Can the ERR pin be used for system-level error logging?

Yes. The open-drain ERR pin asserts HIGH for one clock cycle during any read where ECC corrected a single-bit error. It can directly drive an interrupt input on a microcontroller or FPGA, triggering timestamped logging of memory integrity events-essential for failure analysis in certified industrial or medical equipment.

Is the 1.0-V data retention specification guaranteed across temperature?

Yes. The 1.0-V data retention voltage is specified over the full industrial temperature range (–40 °C to +85 °C) and validated per JEDEC JESD22-A107. This ensures reliable data hold during extended brown-out conditions or backup battery discharge-even at temperature extremes encountered in outdoor or under-hood deployments.