Infineon Technologies CY7S1061GE30-10BVXIT

Overview

CY7S1061GE30-10BVXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1 M × 16) CMOS static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ deep-sleep mode, and TTL-compatible I/O. It delivers 10 ns access time at 2.2–3.6 V, supports byte-level writes via BHE/ BLE, and features an ERR pin for single-bit error detection and correction. Used in industrial control modules requiring reliable data retention during low-power states.

For engineers reviewing the CY7S1061GE30-10BVXIT datasheet, CY7S1061GE30-10BVXIT pinout, CY7S1061GE30-10BVXIT application, or CY7S1061GE30-10BVXIT equivalent, this page provides verified package mapping, ECC behavior, Deep Sleep current (≤22 µA), voltage range (2.2–3.6 V), and functional pin roles - all confirmed from Infineon's official documentation.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive memory architecture with dedicated ECC logic that detects and corrects single-bit errors on read cycles without automatic write-back. The ERR output asserts during correction events, enabling system-level fault logging.

It supports dual chip enable (CE1/CE2) and single CE operation, byte-selectable writes (BHE/BLE), and three distinct power modes: active (ICC = 90 mA typ), standby (ISB2 = 20 mA typ), and Deep Sleep (IDS ≤ 22 µA). Data retention is guaranteed at 1.0 V across –40 °C to +85 °C.

Key Specifications

Pinout & Package

The CY7S1061GE30-10BVXIT is packaged in a 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, with 0.5 mm ball pitch. Pinout conforms to Figure 2 (ERR-enabled VFBGA) in Infineon Document 001-79707 Rev. *N.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM with ECC applications.

Compared with AS7C316098B-10BIN and IS61WV102416BLL-10MLI, CY7S1061GE30-10BVXIT uniquely delivers hardware-based single-bit correction with dedicated ERR signaling and 1.0 V data retention - making it the only option qualified for unattended industrial logging where silent data corruption must be eliminated.

Availability

CY7S1061GE30-10BVXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical diagnostic data caches, and avionics health monitor logs requiring stable component supply, long-lifecycle support, and guaranteed ECC functionality.

Supply support for CY7S1061GE30-10BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with ISO 9001 and IATF 16949 certified manufacturing.

This device belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for high-reliability industrial and medical systems demanding low-power data retention, hardware ECC, and extended temperature operation.

FAQ

Does CY7S1061GE30-10BVXIT support automatic error correction write-back?

No. The device detects and corrects single-bit errors during read operations, but does not perform automatic write-back to memory. Correction occurs internally within the read path, and corrected data is presented on I/O lines; the original corrupted bit remains unmodified in the array unless rewritten by the host system.

What is the function of the DS pin during normal operation?

The DS (Deep Sleep) pin must be held HIGH (≥VCC – 0.2 V) for standard read/write operation. If pulled LOW, the device enters Deep Sleep mode: all I/Os go high-impedance, internal logic halts, and current drops to ≤22 µA while preserving data at 1.0 V minimum supply.

Can CY7S1061GE30-10BVXIT operate with only one chip enable signal?

Yes. In single CE mode, pin 3 (CE) serves as the sole chip enable input. CE must be LOW to enable access; when HIGH, the device enters standby (ISB2 = 20 mA typ). Dual CE1/CE2 operation is only required for compatibility with legacy TSOP II layouts - not used in the 48-ball VFBGA package.

Is the ERR pin open-drain, and what pull-up value is recommended?

Yes, ERR is an open-drain output. Infineon specifies a 4.7 kΩ pull-up resistor to VCC (2.2–3.6 V) for proper signal rise time and noise immunity. The pin asserts LOW for ≥5 ns during each ECC correction event and returns HIGH afterward.