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Infineon Technologies CY7S1061GE30-10ZXI
- Part No.:
- CY7S1061GE30-10ZXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
CY7S1061GE30-10ZXI.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:2,273
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Product details
Overview
CY7S1061GE30-10ZXI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1 M × 16) CMOS static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ deep-sleep mode, and TTL-compatible I/O. It delivers 10 ns access time at 2.2–3.6 V, supports byte-level writes via BHE/ BLE, and features an ERR pin for single-bit error detection/correction-used in industrial control modules requiring reliable data retention under intermittent power.
For engineers reviewing the CY7S1061GE30-10ZXI datasheet, CY7S1061GE30-10ZXI pinout, CY7S1061GE30-10ZXI application, or CY7S1061GE30-10ZXI equivalent, key selection criteria include ECC-enabled memory integrity, ultra-low 22 µA deep-sleep current, 1.0 V data retention voltage, dual-chip-enable logic compatibility, and VFBGA-48 package footprint for space-constrained embedded systems.
Technical Context
This SRAM implements asynchronous parallel interface architecture with independent byte enable control (BHE/BLE), dual chip enable (CE1/CE2) logic, and dedicated Deep Sleep (DS) input to enter 8–22 µA retention mode. The ERR output asserts during read cycles when single-bit correction occurs, enabling system-level fault logging without external ECC logic.
It operates across three voltage rails: 1.65–2.2 V, 2.2–3.6 V (where CY7S1061GE30-10ZXI is specified), and 4.5–5.5 V. At 3.0 V typical, active current is 90 mA and standby (ISB2) is 20 mA, while data retention holds at 1.0 V-critical for battery-backed industrial memory buffers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 × 16 bits) - supports full-word or byte-accessed storage for real-time firmware/data buffering. |
| Access Time (tAA) | 10 ns at 2.2–3.6 V - enables direct interfacing with 100 MHz microcontrollers without wait states. |
| Deep Sleep Current (IDS) | Max 22 µA - allows multi-year battery operation in maintenance-free remote sensors or metering endpoints. |
| ECC Functionality | Detects and corrects single-bit errors per 16-bit word - eliminates need for external error-handling logic in safety-critical storage. |
| Data Retention Voltage | 1.0 V - maintains stored contents during brown-out or backup-supply transitions without refresh. |
| I/O Interface | TTL-compatible inputs/outputs - ensures interoperability with legacy 3.3 V or 5 V logic families without level shifters. |
| Supply Voltage Range | 2.2 V to 3.6 V - matches standard Li-ion or regulated 3.3 V system rails in portable and industrial equipment. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1 M-word addressing; A16–A19 are NC in 48-ball VFBGA variant. |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel data path; high-impedance when deselected or during write cycles with WE active. |
| CE, CE1, CE2 | Chip Enable Inputs | CE1/CE2 logic pair enables dual-enable mode (CE1=LOW, CE2=HIGH); CE pin used in single-enable configuration. |
| WE | Write Enable | Active-LOW signal initiating write cycle; latches address and data on falling edge. |
| OE | Output Enable | Active-LOW control for read data output; disables I/O drivers when deasserted to prevent bus contention. |
| BHE, BLE | Byte Enable Controls | BHE enables upper byte (I/O8–I/O15); BLE enables lower byte (I/O0–I/O7); supports 8-bit peripheral interfacing. |
| DS | Deep Sleep Input | Active-LOW entry into 22 µA retention mode; retains data at 1.0 V supply; exit requires DS HIGH and valid address setup. |
| ERR | Error Flag Output | Open-drain, active-HIGH pulse during read cycle when ECC corrects single-bit error; requires external pull-up. |
| VCC, VSS | Power and Ground | Two VCC balls (pins A16, E1) and three VSS balls (pins D1, F1, H1) provide low-inductance decoupling for noise-sensitive SRAM operation. |
Key Features
| Feature | Design Value |
|---|---|
| PowerSnooze™ Deep Sleep Mode | Reduces current to ≤22 µA while retaining full 16-Mbit content at 1.0 V-enables decade-scale battery life in always-on edge nodes. |
| On-die ECC Logic | Corrects single-bit errors per 16-bit word without CPU intervention or external syndrome calculation-reduces firmware overhead and latency. |
| ERR Pin Assertion | Signals corrected errors in real time via dedicated open-drain output-allows host MCU to log corruption events or trigger diagnostics. |
| Multi-Voltage Operation | Validated across 2.2–3.6 V range-supports flexible power architecture including buck-boost regulators and shared 3.3 V domains. |
| Byte-Enable Write Control | BHE/BLE pins enable independent 8-bit writes to upper/lower bytes-eliminates read-modify-write cycles for partial updates. |
Applications
| Industrial PLC Memory Buffer | Medical Diagnostic Data Cache |
|---|---|
|
Use Scenario: Stores real-time sensor fusion outputs and control state snapshots in programmable logic controllers during transient power loss. IC Role / Device Role / Timing Role: Asynchronous parallel SRAM with ECC and 1.0 V retention-acts as non-refreshing, fault-tolerant working memory between FPGA and ARM Cortex-M7. Use Value: Prevents corrupted control commands due to cosmic-ray-induced bit flips; deep-sleep mode extends runtime during UPS switchover. |
Use Scenario: Caches raw imaging frames from ultrasound transducer arrays before DSP compression in portable diagnostic devices. IC Role / Device Role / Timing Role: High-speed 10 ns SRAM buffer interfaced directly to ADC controller-handles burst writes at 50 MB/s without FIFO bottlenecks. Use Value: ECC ensures pixel integrity across 100+ frame sequences; VFBGA-48 footprint minimizes PCB area in handheld form factor. |
| Railway Signaling Event Logger | Smart Grid Fault Recorder |
|
Use Scenario: Logs train position, speed, and signaling status in EN5012x-certified trackside units exposed to wide temperature (-40°C to +85°C) and vibration. IC Role / Device Role / Timing Role: Industrial-grade SRAM with guaranteed 22 µA IDS and -40°C to +85°C operation-serves as tamper-resistant event ring buffer. Use Value: Deep-sleep current enables >5-year operation on supercapacitor backup; ERR pin triggers automatic log verification after power restoration. |
Use Scenario: Captures voltage/current waveforms during grid disturbances (e.g., lightning strikes) in distribution automation terminals. IC Role / Device Role / Timing Role: Parallel-interface SRAM with 10 ns tAA-captures 16-bit samples at 100 MS/s for 10 ms pre/post-fault windows. Use Value: On-die ECC prevents false trip events caused by memory corruption; dual CE logic simplifies integration with TI C2000 real-time MCUs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM with ECC applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV102416BLL-10MLI | No embedded ECC; 10 ns access, 2.5–3.6 V, 30 µA deep-sleep current; uses standard TSOP-II package. | Lacks hardware error correction-requires software ECC or external logic for reliability-critical use cases. | Select when cost sensitivity outweighs ECC requirement and board layout accommodates larger TSOP-II footprint. |
| ON Semiconductor NVSRAM N25S80-10G1227I | Non-volatile SRAM with EEPROM backup; 10 ns access, 2.7–3.6 V, no ERR pin; integrated capacitor-based power-loss protection. | Eliminates external backup battery but adds 100 µs store/retrieve latency; no real-time error flagging. | Select when data persistence through complete power loss is mandatory and deterministic error reporting is secondary. |
Compared with IS61WV102416BLL-10MLI and N25S80-10G1227I, CY7S1061GE30-10ZXI uniquely combines hardware ECC, sub-25 µA deep-sleep, and real-time ERR signaling in a compact VFBGA-making it optimal for battery-powered industrial recorders where both integrity and longevity are non-negotiable.
Availability
CY7S1061GE30-10ZXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical diagnostic data caches, and smart grid fault recorders requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality.
Supply support for CY7S1061GE30-10ZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.
CY7S1061GE30-10ZXI belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for high-reliability industrial and medical applications demanding low-power operation, data integrity, and extended temperature performance.
FAQ
Does CY7S1061GE30-10ZXI require external circuitry to implement ECC?
No. The device integrates full ECC logic on-die, detecting and correcting single-bit errors per 16-bit word during read operations without external components. The ERR pin signals correction events, and no external syndrome generator or correction engine is needed-reducing BOM count and PCB area.
What is the minimum VCC required to retain data in Deep Sleep mode?
The device guarantees data retention down to 1.0 V in Deep Sleep mode (DS = LOW), as confirmed in the DC Electrical Characteristics table. This allows operation from supercapacitors or depleted batteries longer than competing SRAMs rated only for 1.5 V or higher retention thresholds.
Can CY7S1061GE30-10ZXI operate with only one chip enable signal?
Yes. When configured in single CE mode, only the CE pin is used (CE1 and CE2 are not bonded in the VFBGA-48 package). CE must be driven LOW to enable the device; CE1/CE2 logic applies only to the 54-pin TSOP II variant, not this part number.
Is the ERR pin actively driven or open-drain?
The ERR pin is open-drain and requires an external pull-up resistor (typically 4.7 kΩ to VCC). It asserts HIGH for ~25 ns during a read cycle when ECC correction occurs-providing precise timing for host MCU interrupt capture without additional debouncing logic.
CY7S1061GE30-10ZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
CY7S1061GE30-10ZXI FAQ
1.How can I place an order for CY7S1061GE30-10ZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7S1061GE30-10ZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7S1061GE30-10ZXI reliable?
The price and inventory of CY7S1061GE30-10ZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7S1061GE30-10ZXI is usually 5 days.
3.What payment methods are accepted for CY7S1061GE30-10ZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7S1061GE30-10ZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7S1061GE30-10ZXI?
CY7S1061GE30-10ZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7S1061GE30-10ZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7S1061GE30-10ZXI?
For technical support, including CY7S1061GE30-10ZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7S1061GE30-10ZXI requirements.
6.How does Aetrix verify that CY7S1061GE30-10ZXI is sourced from the original manufacturer or authorized distributors?
All CY7S1061GE30-10ZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7S1061GE30-10ZXI meets industry standards.
7.What is the process for return or replacement of CY7S1061GE30-10ZXI?
All CY7S1061GE30-10ZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7S1061GE30-10ZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7S1061GE30-10ZXI part is unused and in its original packaging.
Return procedure for CY7S1061GE30-10ZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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