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Infineon Technologies CY7S1061GE30-10ZXIT

Part No.:
CY7S1061GE30-10ZXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-TFSOP (0.724", 18.40mm Width)
Datasheet:
AetrixCY7S1061GE30-10ZXIT.pdf
Description:
IC SRAM 16MBIT PARALLEL 48TSOP I
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,161

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Product details

Overview

CY7S1061GE30-10ZXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit (1 M × 16) asynchronous CMOS static RAM with embedded Error Correcting Code (ECC), PowerSnooze™ deep-sleep mode, and TTL-compatible I/O. It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V), delivers 10 ns access time, and draws ≤22 µA in Deep Sleep - used in industrial control modules requiring persistent low-power data retention.

For engineers reviewing the CY7S1061GE30-10ZXIT datasheet, CY7S1061GE30-10ZXIT pinout, CY7S1061GE30-10ZXIT application, or CY7S1061GE30-10ZXIT equivalent, key selection criteria include ECC-enabled single-bit error correction, dual-chip-enable logic support, byte-select write capability via BHE/ BLE, and VFBGA-48 package compatibility with high-density PCB layouts.

Technical Context

This SRAM implements a synchronous-free, fully static architecture with independent address/data buses and dedicated control lines (CE1/CE2, WE, OE, BHE, BLE, DS, ERR). Its ECC engine performs real-time single-bit error detection and correction on every read cycle without external logic or software intervention.

The device supports three distinct power modes: Active (ICC ≤ 110 mA), Standby (ISB2 ≤ 30 mA), and Deep Sleep (IDS ≤ 22 µA), triggered by the DS pin. Voltage-flexible operation enables drop-in replacement across legacy 3.3 V and 5 V systems while maintaining 1.0 V data retention at VCC = 0 V.

Key Specifications

Parameter Value and Actual Design Meaning
Memory size 16 Mbit (1,048,576 × 16 bits) - supports 2 MB of word-addressable storage for firmware buffers or real-time data logging.
Access time (tAA) 10 ns at VCC = 2.2–3.6 V - enables direct interface with 100 MHz microcontrollers without wait states.
Deep Sleep current ≤22 µA - sustains memory contents during extended system hibernation with minimal battery drain.
ECC function Hardware-based single-bit error detection and correction per read - eliminates need for external ECC controller or software overhead.
ERR pin Dedicated open-drain output signals corrected error events - allows host MCU to log or flag memory integrity issues.
Supply voltage range 2.2 V to 3.6 V - compatible with modern low-voltage SoCs and industrial FPGAs without level-shifting.
Data retention voltage 1.0 V - preserves stored data even when main supply drops below functional threshold.

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, RoHS-compliant, lead-free.

Pin/Terminal Circuit Role Design Meaning
A0–A19 Address inputs 20-bit address bus supporting full 1 M-word addressing; A16–A19 are NC in 48-ball variant per datasheet Figure 2.
I/O0–I/O15 Bidirectional data bus 16-bit parallel interface; byte writes enabled independently via BHE (upper byte) and BLE (lower byte).
CE, CE1, CE2 Chip enable controls Supports both single-CE (CE active-low) and dual-CE (CE1=LOW + CE2=HIGH) configurations for flexible memory mapping.
WE, OE, BHE, BLE Control inputs Asynchronous write enable, output enable, and byte-select enables - no clock required for operation.
DS Deep Sleep input Active-low entry into ultra-low-power retention mode; deassertion restores full functionality within tDS = 100 ns.
ERR Error indication output Open-drain signal pulsed low for one tCYC upon successful single-bit correction - requires external pull-up.
VCC, VSS Power and ground Dual VCC pins (balls A16, E1) and multiple VSS balls (A1, D1, G1, H1, etc.) ensure stable power delivery and noise immunity.

Key Features

Feature Design Value
PowerSnooze™ Deep Sleep 22 µA max current at full temperature range (–40 °C to +85 °C) - extends battery life in always-on edge nodes.
Embedded ECC On-die Hamming-code logic corrects single-bit errors in real time - prevents silent data corruption in safety-critical buffers.
TTL-compatible I/O VIH/VIL thresholds match standard 3.3 V and 5 V logic families - eliminates need for external level translators.
Multi-voltage support Single part qualified across 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V rails - simplifies BOM consolidation across product generations.
Byte-select write control Independent BHE/ BLE enables 8-bit updates without disturbing adjacent bytes - critical for compact protocol stack implementations.

Applications

Industrial PLC Data Buffer Medical Device Event Log

Use Scenario: Storing real-time sensor readings and alarm timestamps in programmable logic controllers deployed in factory automation environments.

IC Role / Device Role / Timing Role: Nonvolatile buffer with ECC-protected storage; retains data during brownouts using 1.0 V retention voltage.

Use Value: Prevents loss of critical operational history during power interruption, enabling deterministic fault recovery and regulatory audit compliance.

Use Scenario: Capturing diagnostic telemetry and treatment event logs in portable infusion pumps operating on coin-cell batteries.

IC Role / Device Role / Timing Role: Low-power SRAM acting as secure, error-resilient memory for FDA-mandated usage records.

Use Value: 22 µA Deep Sleep current extends battery service life beyond 12 months while ECC ensures log integrity under EMI stress.

Avionics Health Monitor Smart Grid RTU Cache

Use Scenario: Recording flight-critical subsystem status snapshots in airborne health monitoring units subject to wide thermal swings.

IC Role / Device Role / Timing Role: Industrial-grade SRAM with –40 °C to +85 °C qualification and 10 ns access for deterministic response to watchdog triggers.

Use Value: Guarantees sub-100 ns memory access during rapid fault escalation sequences, meeting DO-254 timing budgets.

Use Scenario: Caching metering data and configuration parameters in remote terminal units installed in unconditioned outdoor substations.

IC Role / Device Role / Timing Role: High-reliability SRAM with dual-VCC support (3.3 V logic + 5 V legacy interface) and robust ESD tolerance.

Use Value: Eliminates need for separate voltage translators or backup SRAM, reducing bill-of-materials and field failure risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM with ECC applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C31026B-10TIN No integrated ECC; requires external error-handling logic; 10 ns access, 3.3 V only. Lacks hardware error correction - unsuitable where data integrity is mandated without software overhead. Select only if cost sensitivity outweighs reliability requirements and host processor can manage ECC in firmware.
IS61WV102416BLL-10MLI Includes parity but not full ECC; 10 ns access; 2.5 V/3.3 V operation; no ERR pin or PowerSnooze™. Provides basic error detection only; no automatic correction or low-power retention signaling. Choose when parity-level protection suffices and Deep Sleep current <50 µA is not required.

Compared with AS7C31026B-10TIN and IS61WV102416BLL-10MLI, CY7S1061GE30-10ZXIT uniquely integrates real-time single-bit correction, an ERR status indicator, and 22 µA Deep Sleep - delivering verified data integrity and ultra-low standby power in a single VFBGA-48 package.

Availability

CY7S1061GE30-10ZXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device event logging, and avionics health monitoring requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality.

Supply support for CY7S1061GE30-10ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with emphasis on reliability and industrial longevity.

CY7S1061GE30-10ZXIT belongs to Infineon's legacy Cypress SRAM portfolio, engineered for mission-critical embedded systems demanding zero-error data retention, multi-voltage interoperability, and ultra-low quiescent power in harsh environments.

FAQ

Does CY7S1061GE30-10ZXIT support automatic error correction without host intervention?

Yes. The device performs full single-bit error detection and correction autonomously on every read cycle using on-die ECC logic. No host CPU involvement or firmware routines are required - corrected data appears directly on I/O lines, and the ERR pin pulses low to indicate the event.

What is the maximum clock frequency supported for burst reads?

This is an asynchronous SRAM: it has no internal clock. Access timing is governed solely by tAA (10 ns), tCO (7 ns), and tOH (3 ns). System timing depends on external controller setup/hold margins - it interfaces cleanly with 100 MHz microcontrollers using standard address strobe protocols.

Can the ERR pin be left unconnected if error reporting is not needed?

No. The ERR pin is an open-drain output requiring an external pull-up resistor (typically 4.7 kΩ to VCC). Leaving it floating may cause undefined logic states or increased leakage. If unused, connect it to VCC via pull-up and ignore its state in firmware.

Is CY7S1061GE30-10ZXIT pin-compatible with earlier CY7S1061G variants?

Yes - the "-10ZXIT" suffix denotes the 48-ball VFBGA package with ERR functionality. It shares identical pinout, signal definitions, and DC/AC characteristics with CY7S1061GE30-10ZI (same package), differing only in tape-and-reel packaging and extended temperature screening per Infineon's continuity policy.

CY7S1061GE30-10ZXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-TFSOP (0.724", 18.40mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-TSOP I

CY7S1061GE30-10ZXIT FAQ

1.How can I place an order for CY7S1061GE30-10ZXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7S1061GE30-10ZXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7S1061GE30-10ZXIT reliable?

The price and inventory of CY7S1061GE30-10ZXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7S1061GE30-10ZXIT is usually 5 days.

3.What payment methods are accepted for CY7S1061GE30-10ZXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7S1061GE30-10ZXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7S1061GE30-10ZXIT?

CY7S1061GE30-10ZXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7S1061GE30-10ZXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7S1061GE30-10ZXIT?

For technical support, including CY7S1061GE30-10ZXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7S1061GE30-10ZXIT requirements.

6.How does Aetrix verify that CY7S1061GE30-10ZXIT is sourced from the original manufacturer or authorized distributors?

All CY7S1061GE30-10ZXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7S1061GE30-10ZXIT meets industry standards.

7.What is the process for return or replacement of CY7S1061GE30-10ZXIT?

All CY7S1061GE30-10ZXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7S1061GE30-10ZXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7S1061GE30-10ZXIT part is unused and in its original packaging.

Return procedure for CY7S1061GE30-10ZXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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