Infineon Technologies CYK256K16SCBU-70BVXI

Overview

CYK256K16SCBU-70BVXI from Cypress Semiconductor is a 4-Mbit pseudo-static RAM (PSRAM) organized as 256K × 16, supporting asynchronous memory interface with 70 ns read cycle time, 2.7–3.3 V supply range, and ultra-low active current (1 mA @ 1 MHz). It delivers MoBL® low-power performance for battery-constrained portable systems including cellular handsets and handheld computing devices.

For engineers reviewing the CYK256K16SCBU-70BVXI datasheet, CYK256K16SCBU-70BVXI pinout, CYK256K16SCBU-70BVXI application, or CYK256K16SCBU-70BVXI equivalent, key selection criteria include byte-selectable I/O control (BHE/ BLE), automatic CE-based power-down (ISB2 = 17 µA typ), high-impedance tri-state behavior during deselect/write, and VFBGA-48 packaging compatibility with space-constrained PCB layouts.

Technical Context

This PSRAM implements a CMOS-based pseudo-static architecture that emulates SRAM timing while integrating internal refresh logic-eliminating external refresh circuitry. It uses dual chip enables (CE1/CE2) and independent byte enables (BHE/BLE) to support flexible 8-bit or 16-bit data access without bus turnaround overhead.

Power management is implemented via three standby modes: CE1 HIGH/CE2 LOW, CE1 LOW/CE2 HIGH with OE HIGH, or both BHE and BLE HIGH-each reducing ICC to sub-40 µA levels. All I/O pins enter high-impedance state during deselect, write, or output disable, ensuring clean bus sharing in multi-peripheral systems.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant. Pin mapping validated per Cypress Document #38-05526 Rev. *H, Page 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar pseudo-static RAM applications.

Compared with IS61WV25616BLL-70BLI and W9825G6JH-75, CYK256K16SCBU-70BVXI uniquely combines wide-voltage operation (2.7–3.3 V), integrated refresh, and ultra-low ISB2-making it optimal for battery-critical, space-constrained embedded systems where interface simplicity and power predictability are mandatory.

Availability

CYK256K16SCBU-70BVXI is available at Aetrix Electronics and suitable for cellular handset baseband subsystems, portable medical monitor UIs, and industrial HMI touch panels requiring stable component supply, long-lifecycle support, and guaranteed traceable sourcing.

Supply support for CYK256K16SCBU-70BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for embedded, automotive, and industrial markets, with emphasis on low-power innovation and system-level integration.

The MoBL® PSRAM product line targets portable electronics requiring SRAM-like ease-of-use with DRAM-level density and power efficiency-specifically optimized for battery-operated communication and human-interface applications.

FAQ

Does CYK256K16SCBU-70BVXI require external refresh circuitry?

No. It is a pseudo-static RAM with fully integrated refresh logic. The device autonomously manages all row refresh cycles internally-no external refresh signals, timers, or controller intervention are needed. This enables direct drop-in replacement for true SRAM in legacy designs while retaining 4-Mbit density.

What is the function of CE1 and CE2, and can they be tied together?

CE1 and CE2 form a two-input enable hierarchy: the device activates only when CE1 is LOW and CE2 is HIGH. They cannot be tied together-doing so prevents activation. This dual-enable structure supports multi-chip select decoding and enables precise power-down control in systems with multiple memory devices sharing the same bus.

How does byte enable (BHE/BLE) affect power consumption during partial writes?

Asserting only BLE (for lower byte) or BHE (for upper byte) reduces dynamic switching activity on half the I/O bus, lowering transient current spikes. While ICC spec is measured across full 16-bit operation, selective byte writes measurably decrease average power in burst-oriented applications like GUI glyph updates or sensor data streaming.

Is the VFBGA-48 package compatible with standard reflow profiles for lead-free assembly?

Yes. The CYK256K16SCBU-70BVXI's VFBGA-48 package is qualified for IPC/JEDEC J-STD-020D-compliant lead-free reflow, with peak temperature up to 260°C. Cypress specifies thermal resistance θJA = 55°C/W and θJC = 17°C/W, confirming suitability for standard PCB thermal pad layouts and automated SMT lines.