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Infineon Technologies CYK512K16SCAU-70BAXI

Part No.:
CYK512K16SCAU-70BAXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixCYK512K16SCAU-70BAXI.pdf
Description:
IC PSRAM 8MBIT PARALLEL 48FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,284

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Product details

Overview

CYK512K16SCAU-70BAXI from Cypress Semiconductor is a 8-Mbit pseudo-static RAM (PSRAM) organized as 512K × 16, supporting asynchronous memory interface with 70 ns read cycle time, 2.7–3.3 V supply, and MoBL® low-power architecture. It delivers 11 mA typical active current at fMAX, 55 µA typical standby current (ISB2), and operates across −25°C to +85°C for industrial portable systems including cellular handsets and battery-powered embedded controllers.

For engineers reviewing the CYK512K16SCAU-70BAXI datasheet, CYK512K16SCAU-70BAXI pinout, CYK512K16SCAU-70BAXI application, or CYK512K16SCAU-70BAXI equivalent, key selection criteria include byte-selectable I/O (BHE/ BLE), automatic CE-controlled power-down, high-impedance tri-state outputs during deselect/OE deassertion/write, and FBGA-48 package compatibility with space-constrained PCB layouts.

Technical Context

The CYK512K16SCAU-70BAXI implements a CMOS-based PSRAM architecture with dual chip enables (CE1/CE2), independent byte enables (BHE/BLE), and OE/WE control to support flexible read/write timing modes - including address-controlled, OE-controlled, and WE-controlled cycles. Its internal power-down circuit activates when CE1 is HIGH and CE2 is LOW (or both BHE/BLE are HIGH), reducing ICC to ISB2 levels without external logic.

It features true asynchronous operation: data appears on I/O0–I/O7 when BLE = LOW and on I/O8–I/O15 when BHE = LOW; all I/Os enter high-Z state during deselect, OE HIGH, or write (WE LOW). Timing parameters such as tACE (70 ns), tDOE (35 ns), and tHZOE (25 ns) are specified under 30-pF load and 1 V/ns edge rates per JEDEC-compliant AC test conditions.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 8 Mbit (512K × 16); supports 16-bit data bus without external multiplexing
Access Time 70 ns max tRC and tAA; enables integration with 14 MHz microcontrollers without wait states
Supply Voltage 2.7 V to 3.3 V; compatible with single-supply 3.0 V system rails and Li-ion battery discharge profiles
Active Current 11 mA typical at fMAX; enables >100 hr runtime in 20 mA-hr coin-cell powered telemetry nodes
Standby Current 55 µA typical ISB2; reduces quiescent drain during sleep mode in always-on sensor hubs
Operating Temp −25°C to +85°C industrial range; qualified for automotive cabin and industrial HMI environments
Package 48-ball FBGA (6.0 × 8.0 × 1.2 mm); supports 0.5 mm pitch routing and automated reflow assembly

Pinout & Package

Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), 6.0 mm × 8.0 mm × 1.2 mm body, Pb-free, industrial temperature grade.

Pin/Terminal Circuit Role Design Meaning
A0–A18 Address Inputs 19-bit address bus supporting full 512K-word addressing; A17/A18 used for density expansion in higher-capacity variants
I/O0–I/O15 Bidirectional Data Bus 16-bit parallel interface; split into upper/lower bytes via BHE/BLE for partial-word access
CE1, CE2 Chip Enable Controls Dual CE logic allows hierarchical memory mapping; CE1 LOW + CE2 HIGH enables device; CE2 LOW forces standby regardless of CE1
OE Output Enable Controls output drivers only; HIGH places I/Os in high-Z even when chip is selected
WE Write Enable Active-LOW signal initiating write; overlapping WE, CE1, CE2, BHE/BLE defines write window per truth table
BHE, BLE Byte High/Low Enable Selects upper (I/O8–I/O15) or lower (I/O0–I/O7) byte during read/write; both LOW enables full 16-bit transfer
VCC, VSS Power & Ground Single 2.7–3.3 V supply; decoupling required per ball map due to high-speed switching noise sensitivity

Key Features

Feature Design Value
MoBL® Ultra-Low Power Architecture Reduces active ICC to 11 mA at max frequency and standby ISB2 to 55 µA - critical for battery life extension in handheld devices
Asynchronous Byte-Selectable Interface Independent BHE/BLE control enables 8-bit peripheral coexistence on same bus without glue logic or data masking overhead
Automatic Power-Down on Deselect Enters low-power state when CE1 HIGH/CE2 LOW or both BHE/BLE HIGH - no software or external circuitry needed
Tri-State Output Control I/O pins go high-Z on deselect, OE HIGH, or during write - prevents bus contention in multi-master or shared-memory systems
Industrial Temperature Qualification Validated across −25°C to +85°C with guaranteed timing margins - suitable for non-automotive but thermally demanding industrial enclosures

Applications

Cellular Handset Baseband Memory Portable Medical Monitor Buffer

Use Scenario: Stores real-time voice codec buffers and protocol stack variables in GSM/UMTS feature phones with tight PCB area constraints.

IC Role / Device Role / Timing Role: Asynchronous PSRAM providing zero-wait-state 16-bit data access to ARM9 baseband processor during call setup and handover.

Use Value: 70 ns tRC and 55 µA ISB2 enable <10 µW average power draw during idle voice channels - extending talk time by 18% vs. standard SRAM.

Use Scenario: Buffers ECG waveform samples at 1 kS/s before Bluetooth LE transmission in wearable cardiac monitors.

IC Role / Device Role / Timing Role: Low-voltage PSRAM interfaced directly to 3.3 V ADC controller and BLE SoC, handling burst writes and sequential reads.

Use Value: 2.7–3.3 V operation matches battery voltage sag profile; 11 mA ICC at 1 MHz supports continuous sampling without thermal throttling.

Industrial HMI Display Frame Buffer Smart Meter Firmware Cache

Use Scenario: Holds GUI bitmap layers and touch coordinate history in panel-mounted HMIs deployed in factory automation cabinets.

IC Role / Device Role / Timing Role: External memory mapped to microcontroller's static bus, accessed via CE1/CE2 decode for multi-zone display refresh.

Use Value: Dual CE inputs allow memory partitioning between UI rendering and real-time alarm logging - eliminating external address demuxers.

Use Scenario: Caches firmware update images and tariff tables in ANSI C12.19-compliant smart electricity meters operating unattended for 15+ years.

IC Role / Device Role / Timing Role: Non-volatile boot companion storing validated code segments; retains data during brownout events via fast CE-controlled power-down.

Use Value: 55 µA ISB2 ensures <1.5 µA average system leakage during 99% meter sleep time - meeting IEC 62056-21 low-power compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar pseudo-static RAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61WV51216BLL-70TLI 70 ns access, 2.5–3.6 V supply, 15 mA ICC @ fMAX, 100 µA ISB; 44-pin TSOP-II package Requires board redesign for TSOP footprint and wider voltage tolerance; lacks dual CE power-down logic Preferred where legacy TSOP layout reuse is mandatory and wider VCC margin offsets higher standby draw
Winbond W9825G6JH-75 SDRAM interface (not PSRAM), 166 MHz clocked, 3.3 V only, 48-ball FBGA; requires memory controller with SDRAM timing engine Not pin- or protocol-compatible; needs controller firmware rewrite and added refresh management Chosen only when system already uses SDRAM controller and bandwidth >100 MB/s justifies complexity

Compared with IS61WV51216BLL-70TLI and W9825G6JH-75, CYK512K16SCAU-70BAXI offers lowest standby power and drop-in asynchronous replacement for legacy SRAM designs - avoiding controller changes while delivering 45% lower ISB than ISSI and full compatibility with existing CE/OE/WE logic.

Availability

CYK512K16SCAU-70BAXI is available at Aetrix Electronics and suitable for cellular handset baseband memory, portable medical monitor buffers, and industrial HMI display frame buffers requiring stable component supply, Pb-free compliance, and industrial temperature assurance.

Supply support for CYK512K16SCAU-70BAXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for embedded systems, emphasizing low-power innovation and automotive-grade quality.

The MoBL® PSRAM product line targets battery-sensitive portable electronics, delivering SRAM-like simplicity with DRAM-level density - specifically engineered for cellular, medical, and industrial applications needing extended runtime and compact packaging.

FAQ

Can CYK512K16SCAU-70BAXI operate reliably at 2.7 V with 70 ns timing?

Yes. The datasheet guarantees tRC ≤ 70 ns and full functionality across the entire 2.7–3.3 V range at −25°C to +85°C. At 2.7 V, ICC drops to ~9 mA at fMAX, and all AC parameters meet specification with proper 30-pF load and 1 V/ns edge rates. No derating is required for timing or voltage.

What happens to I/O pins during power-up or brownout?

During power-up, I/Os remain in high-impedance state until VCC exceeds 1.5 V and stabilization completes (~100 µs). During brownout below 2.5 V, the device enters automatic power-down (ISB2 mode) and forces I/Os high-Z - preventing bus contention or undefined logic states on shared data lines.

Is the 48-ball FBGA footprint compatible with CYK512K16SCCAU-55BAXI?

Yes. Both share identical BA48K package: 48-ball FBGA, 6.0 × 8.0 × 1.2 mm, 0.5 mm pitch, and identical ball map per datasheet Figure 1. The only difference is AC timing (55 ns vs. 70 ns); no PCB redesign is needed for speed-grade substitution.

How does automatic power-down differ between ISB1 and ISB2 modes?

ISB1 (400 µA max) activates when CE1 > VCC–0.2 V and CE2 < 0.2 V with address/data toggling; ISB2 (100 µA max) activates under same CE conditions but with all control inputs static (OE, WE, BHE, BLE held steady). ISB2 is the deeper, lower-power state used during true system sleep.

CYK512K16SCAU-70BAXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
PSRAM
Technology:
PSRAM (Pseudo SRAM)
Memory Size:
8Mbit
Memory Organization:
512K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
70ns
Access Time:
70 ns
Voltage - Supply:
2.7V ~ 3.3V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-FBGA (6x8)

CYK512K16SCAU-70BAXI FAQ

1.How can I place an order for CYK512K16SCAU-70BAXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CYK512K16SCAU-70BAXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CYK512K16SCAU-70BAXI reliable?

The price and inventory of CYK512K16SCAU-70BAXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CYK512K16SCAU-70BAXI is usually 5 days.

3.What payment methods are accepted for CYK512K16SCAU-70BAXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CYK512K16SCAU-70BAXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CYK512K16SCAU-70BAXI?

CYK512K16SCAU-70BAXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CYK512K16SCAU-70BAXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CYK512K16SCAU-70BAXI?

For technical support, including CYK512K16SCAU-70BAXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CYK512K16SCAU-70BAXI requirements.

6.How does Aetrix verify that CYK512K16SCAU-70BAXI is sourced from the original manufacturer or authorized distributors?

All CYK512K16SCAU-70BAXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CYK512K16SCAU-70BAXI meets industry standards.

7.What is the process for return or replacement of CYK512K16SCAU-70BAXI?

All CYK512K16SCAU-70BAXI units undergo pre-shipment inspection (PSI). If there is an issue with CYK512K16SCAU-70BAXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CYK512K16SCAU-70BAXI part is unused and in its original packaging.

Return procedure for CYK512K16SCAU-70BAXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CYK512K16SCAU-70BAXI Tags

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