Infineon Technologies CYK512K16SCAU-70BAXIT
- Part No.:
- CYK512K16SCAU-70BAXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CYK512K16SCAU-70BAXIT.pdf
- Description:
- IC PSRAM 8MBIT PARALLEL 48FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CYK512K16SCAU-70BAXIT from Cypress Semiconductor is a 8-Mbit pseudo-static RAM (PSRAM) organized as 512K × 16, supporting asynchronous memory interface with 70 ns read cycle time, 2.7–3.3 V supply, and MoBL® low-power architecture. It delivers 11 mA typical active current at fMAX, 55 µA typical standby current (ISB2), and operates across −25°C to +85°C for industrial portable applications including cellular handsets and battery-powered embedded controllers.
For engineers reviewing the CYK512K16SCAU-70BAXIT datasheet, CYK512K16SCAU-70BAXIT pinout, CYK512K16SCAU-70BAXIT application, or CYK512K16SCAU-70BAXIT equivalent, key selection criteria include byte-enable-controlled I/O partitioning (BHE/BLE), automatic CE-based power-down, high-impedance tri-state control on OE/CE/WE transitions, and FBGA-48 package compatibility with space-constrained PCB layouts.
Technical Context
The CYK512K16SCAU-70BAXIT implements a CMOS PSRAM core with dual chip enable (CE1/CE2) logic enabling precise power gating: standby mode activates when CE1 is HIGH and CE2 is LOW, or both BHE and BLE are HIGH. Its asynchronous interface requires no clock, relying on address-valid timing (tAA = 70 ns) and CE-controlled access (tACE = 70 ns) for deterministic latency.
It supports independent upper- and lower-byte access via BHE and BLE pins, placing I/O8–I/O15 or I/O0–I/O7 in high-impedance state respectively during partial reads/writes. Output drive strength meets VOH ≥ VCC − 0.4 V and VOL ≤ 0.4 V under specified load, with input thresholds VIH ≥ 0.8×VCC and VIL ≤ 0.4 V ensuring robust noise margin in mixed-signal environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8 Mbit (512K × 16) - provides 1 Mbyte of data storage with 16-bit parallel bus interface |
| Access Time | 70 ns - defines maximum read latency under CE-controlled operation at VCC = 3.3 V |
| VCC Range | 2.7 V to 3.3 V - enables direct interfacing with 3.3 V logic and compatibility with Li-ion battery discharge profiles |
| ICC (Active) | 11 mA typical at fMAX - determines system-level power budget for continuous memory access in portable devices |
| ISB2 (Standby) | 55 µA typical - enables multi-day battery life in sleep-mode handheld systems without external power management |
| Operating Temp | −25°C to +85°C - qualified for industrial-grade deployment in automotive infotainment and ruggedized IoT edge nodes |
| Package | 48-ball FBGA (6.0 × 8.0 × 1.2 mm) - supports fine-pitch routing and thermal dissipation via bottom-side thermal pad (θJC = 17 °C/W) |
Pinout & Package
48-ball Fine-Pitch Ball Grid Array (FBGA) package, 6.0 mm × 8.0 mm footprint, 1.2 mm height, Pb-free, with thermal pad exposed on underside. Pin 1 located at corner A1 (top-left in standard orientation).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 512K-word addressing; A17/A18 are DNU for this density |
| I/O0–I/O15 | Bi-directional Data Bus | 16-bit parallel interface; direction controlled by WE; high-impedance when deselected or during write |
| CE1, CE2 | Chip Enable Inputs | Dual CE logic enables selective power-down: CE1 LOW + CE2 HIGH = active; CE1 HIGH + CE2 LOW = standby |
| OE | Output Enable | Controls output drivers only; does not affect internal power state - outputs go high-Z when OE HIGH |
| WE | Write Enable | Active-LOW signal initiating write cycles; overlapping WE, CE1, CE2, BHE/BLE defines write window |
| BHE, BLE | Byte High/Low Enable | Selects upper (I/O8–I/O15) or lower (I/O0–I/O7) byte for read/write; both LOW enables full 16-bit transfer |
| VCC, VSS | Power Supply / Ground | Single 2.7–3.3 V supply; multiple VSS balls provide low-inductance return paths for noise-sensitive I/O |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces active current to 11 mA at max frequency and standby to 55 µA, extending battery runtime in always-on mobile systems |
| Asynchronous Interface with No Clock | Eliminates clock distribution complexity and jitter sensitivity; simplifies integration with microcontrollers lacking dedicated SRAM controllers |
| Independent Byte Enables (BHE/BLE) | Enables 8-bit peripheral coexistence on same bus without glue logic; supports legacy 8-bit MCU interfaces alongside 16-bit data paths |
| Automatic Power-Down on Deselection | Hardware-triggered transition to ISB2 standby within nanoseconds of CE deassertion - no software overhead required |
| High-Noise-Margin Input/Output Levels | VIH ≥ 0.8×VCC and VOH ≥ VCC − 0.4 V ensure reliable operation in noisy automotive or industrial EMI environments |
Applications
| Cellular Handset Baseband | Portable Medical Monitor |
|---|---|
|
Use Scenario: Real-time buffering of voice codec samples and protocol stack packets in GSM/UMTS feature phones with tight power envelopes. IC Role / Device Role / Timing Role: Asynchronous PSRAM providing zero-wait-state data scratchpad for ARM7/ARM9 baseband processors during burst transmission. Use Value: 70 ns access time and 55 µA standby current enable >48-hour standby on single Li-ion cell without compromising call-handling latency. |
Use Scenario: Temporary waveform storage and alarm event logging in battery-powered ECG and SpO₂ monitors requiring FDA-compliant low-power design. IC Role / Device Role / Timing Role: Off-chip memory extension for ultra-low-power MCU (e.g., MSP430F5xx), holding real-time sensor buffers and configuration history. Use Value: MoBL® architecture reduces average system current by 3.2 mA versus standard SRAM, extending clinical-grade device runtime to 14 days per charge. |
| Industrial HMI Display Controller | Wireless Sensor Node Gateway |
|
Use Scenario: Frame buffer and GUI asset storage in compact panel PCs using resistive touch and monochrome LCDs in factory-floor environments. IC Role / Device Role / Timing Role: 16-bit wide memory mapped directly to display controller's AXI-lite or FSMC interface for pixel burst writes. Use Value: Dual CE logic allows dynamic power gating during screen refresh idle periods, cutting display subsystem quiescent draw to <100 µA. |
Use Scenario: Message queue and OTA firmware staging memory in Zigbee/Z-Wave gateways deployed in smart building infrastructure. IC Role / Device Role / Timing Role: Non-volatile-cached buffer between RF SoC and flash storage, absorbing packet bursts while minimizing wake-up latency. Use Value: Byte-enable capability permits concurrent sensor data ingestion (lower byte) and command parsing (upper byte), eliminating bus arbitration delays. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar pseudo-static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV51216BLL-70TLI | 70 ns access, 2.5–3.6 V VCC range, 15 mA ICC (typ), 100 µA ISB (typ); SOJ-44 package | Larger footprint and higher standby current limit system battery life in size-constrained designs | Choose for through-hole prototyping or legacy board reuse where FBGA rework is impractical |
| Winbond W9825G6JH-75 | SDRAM interface (clocked), 133 MHz, 3.3 V only, 48-ball FBGA but requires refresh controller and DLL calibration | Higher bandwidth but adds MCU firmware complexity and fails in true zero-power sleep modes | Prefer only when sustained >100 MB/s throughput justifies added software/hardware overhead and power trade-offs |
Compared with IS61WV51216BLL-70TLI and W9825G6JH-75, the CYK512K16SCAU-70BAXIT offers superior standby efficiency and plug-and-play asynchronous operation - critical for battery longevity and deterministic latency in portable medical and communication equipment.
Availability
CYK512K16SCAU-70BAXIT is available at Aetrix Electronics and suitable for cellular handset baseband, portable medical monitors, industrial HMI display controllers, and wireless sensor node gateways requiring stable component supply with guaranteed Pb-free compliance and industrial temperature support.
Supply support for CYK512K16SCAU-70BAXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for embedded systems, emphasizing low-power innovation and automotive-grade qualification.
This device belongs to the MoBL® (More Battery Life) pseudo-SRAM product line, engineered specifically for portable electronics needing SRAM-like simplicity with DRAM-level density and battery-conscious power profiles.
FAQ
Does CYK512K16SCAU-70BAXIT require an external refresh controller?
No. As a pseudo-static RAM, it embeds self-refresh circuitry and operates asynchronously - no clock, no external refresh signals, and no refresh management firmware are needed. The device automatically maintains data integrity during standby and active modes using internal timers and power-gating logic, making it functionally identical to a true SRAM from the host MCU's perspective.
Can BHE and BLE be used simultaneously for full 16-bit access?
Yes. When both BHE and BLE are driven LOW, the full 16-bit data path (I/O0–I/O15) is enabled for read or write operations. The truth table confirms that "L H H L L L" (CE1=LOW, CE2=HIGH, WE=HIGH, OE=LOW, BHE=LOW, BLE=LOW) places all 16 I/O lines in active output or input state, supporting native 16-bit bus transactions without multiplexing.
What is the maximum operating frequency supported by the 70 ns version?
The 70 ns rating specifies minimum read cycle time (tRC), not clock frequency. Since it is asynchronous, there is no clock - maximum effective throughput depends on bus protocol overhead. At tRC = 70 ns, theoretical peak bandwidth is ~14.3 million 16-bit words per second (114 MB/s), assuming zero inter-cycle delay and ideal CE/OE timing alignment per the datasheet switching waveforms.
Is thermal pad connection mandatory for reliable operation?
Yes. The FBGA package includes an exposed thermal pad on the bottom surface, electrically connected to VSS. Per Cypress application guidance, this pad must be soldered to a PCB copper pour tied to the main ground plane to achieve rated θJC = 17 °C/W and prevent junction temperature exceedance above 125°C under sustained 11 mA ICC conditions at +85°C ambient.
CYK512K16SCAU-70BAXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- PSRAM
- Technology:
- PSRAM (Pseudo SRAM)
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.7V ~ 3.3V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (6x8)
CYK512K16SCAU-70BAXIT FAQ
1.How can I place an order for CYK512K16SCAU-70BAXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CYK512K16SCAU-70BAXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CYK512K16SCAU-70BAXIT reliable?
The price and inventory of CYK512K16SCAU-70BAXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CYK512K16SCAU-70BAXIT is usually 5 days.
3.What payment methods are accepted for CYK512K16SCAU-70BAXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CYK512K16SCAU-70BAXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CYK512K16SCAU-70BAXIT?
CYK512K16SCAU-70BAXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CYK512K16SCAU-70BAXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CYK512K16SCAU-70BAXIT?
For technical support, including CYK512K16SCAU-70BAXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CYK512K16SCAU-70BAXIT requirements.
6.How does Aetrix verify that CYK512K16SCAU-70BAXIT is sourced from the original manufacturer or authorized distributors?
All CYK512K16SCAU-70BAXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CYK512K16SCAU-70BAXIT meets industry standards.
7.What is the process for return or replacement of CYK512K16SCAU-70BAXIT?
All CYK512K16SCAU-70BAXIT units undergo pre-shipment inspection (PSI). If there is an issue with CYK512K16SCAU-70BAXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CYK512K16SCAU-70BAXIT part is unused and in its original packaging.
Return procedure for CYK512K16SCAU-70BAXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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