Infineon Technologies CYPT1542AV18-250GCMB
- Part No.:
- CYPT1542AV18-250GCMB
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-BFCPGA
- Datasheet:
-
CYPT1542AV18-250GCMB.pdf
- Description:
- IC SRAM 72MBIT PARALLEL 165CCGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CYPT1542AV18-250GCMB from Infineon Technologies (formerly Cypress) is a radiation-hardened 72-Mbit QDR® II+ SRAM with 4M × 18 organization, RadStop™ technology, 250 MHz clock frequency, and 165-ball CCGA package. It delivers concurrent read/write operations via independent DDR ports, supports two-word burst transfers, and operates at 1.8 V core / 1.4–1.8 V I/O with HSTL interfaces - deployed in spaceborne avionics data buffers requiring latch-up immunity >120 MeV·cm²/mg and total ionizing dose tolerance up to 300 krad(Si).
For engineers reviewing the CYPT1542AV18-250GCMB datasheet, CYPT1542AV18-250GCMB pinout, CYPT1542AV18-250GCMB application, or CYPT1542AV18-250GCMB equivalent, key selection criteria include radiation performance (neutron fluence 2.0 × 10¹⁴ n/cm²), DLL-enabled 2-cycle read latency, echo clock (CQ/CQ#) timing support, JTAG 1149.1 test access, and depth expansion via RPS/WPS controls.
Technical Context
This QDR II+ SRAM implements a synchronous pipelined architecture with physically separate read and write data paths, eliminating bus turnaround delays. It uses dual-edge-triggered DDR I/O on both ports at 250 MHz (500 MT/s), with address latching on K (rising edge for reads) and K# (falling edge for writes) - all synchronized to a single multiplexed A[20:0] bus.
The device integrates a delay-locked loop (DLL) for precise data placement, supports byte-write masking via BWS[1:0], and provides QVLD strobe for valid data indication. Its RadStop™ hardening enables operation under extreme radiation environments: SEL immunity at 125 °C, soft error rate ≤1 × 10⁻¹⁰ upsets/bit-day with external SECDED EDAC, and dose rate survivability up to 1.5 × 10¹¹ rad(Si)/sec.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 72 Mbit (4M × 18 organization) |
| Max Clock Frequency | 250 MHz - enables 500 MT/s DDR data rate per port |
| Rad-Hard Performance | Total ionizing dose = 300 krad(Si); latch-up immunity = 120 MeV·cm²/mg at 125 °C |
| Core / I/O Voltage | VDD = 1.8 V ±0.1 V; VDDQ = 1.4–1.8 V - supports HSTL-18 I/O interface |
| Burst & Latency | Two-word burst on all accesses; 2-cycle read latency with DLL enabled |
| Package | 165-ball Ceramic Column Grid Array (CCGA), 21 × 25 × 2.83 mm |
| Standards Compliance | IEEE 1149.1 JTAG boundary scan; RoHS-compliant ceramic packaging |
Pinout & Package
Package: 165-ball Ceramic Column Grid Array (CCGA), 21 mm × 25 mm × 2.83 mm body height, column grid layout with solder columns (non-qualified prototyping variant CYPT1542AV18 uses same footprint without attached columns).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data input | 18-bit parallel data sampled on rising edges of K/K# during active WPS; supports byte-write via BWS[1:0] |
| Q[17:0] | Synchronous read data output | 18-bit DDR output registered to K/K#, strobed by QVLD and echoed by CQ/CQ# for timing margin |
| K / K# | Differential input clocks | K rising edge latches read addresses; K# falling edge latches write addresses - enables true concurrent R/W |
| CQ / CQ# | Output echo clocks | Phase-aligned copies of K/K# output with read data - simplifies high-speed capture in FPGA/ASIC receivers |
| RPS / WPS | Port select controls | Active-low enables independent read/write port activation - essential for depth expansion and bank isolation |
| BWS[1:0] | Byte write select | BWS0 controls D[8:0]; BWS1 controls D[17:9] - allows partial-word writes without read-modify-write overhead |
| QVLD | Valid data indicator | Output pulse synchronized to Q[17:0] - signals when read data is stable and valid at receiver inputs |
| TCK/TMS/TDI/TDO | JTAG test access port | Fully compliant IEEE 1149.1 boundary scan chain for production test and debug in radiation-hardened systems |
Key Features
| Feature | Design Value |
|---|---|
| RadStop™ Radiation Hardening | Proprietary design/process hardening enabling 300 krad(Si) TID tolerance and SEL immunity >120 MeV·cm²/mg at 125 °C |
| True Concurrent Read/Write Ports | Independent DDR data paths eliminate bus turnaround - sustains full 500 MT/s bandwidth on both ports simultaneously |
| DLL-Based Timing Precision | On-chip delay-locked loop ensures <±50 ps data-to-clock alignment at 500 MT/s, critical for SERDES/FPGA interfacing |
| Two-Word Burst Architecture | All accesses deliver two sequential 18-bit words per clock cycle - doubles effective throughput vs. single-word devices |
| HSTL-18 I/O Interface | 1.4–1.8 V programmable drive strength with VREF termination - matches FPGA transceivers without level-shifting |
Applications
| Spacecraft Onboard Data Buffer | High-Energy Physics Detector Memory |
|---|---|
Use Scenario: Real-time buffering of telemetry packets from multiple sensors before downlink compression and transmission. IC Role / Device Role / Timing Role: High-bandwidth, radiation-tolerant SRAM serving as primary packet staging buffer with deterministic 2-cycle latency. Use Value: Concurrent R/W eliminates arbitration stalls; RadStop™ ensures >10-year mission life in GEO orbit without SEU-induced corruption. | Use Scenario: Storing triggered event data from silicon strip detectors in particle collider front-end electronics. IC Role / Device Role / Timing Role: Low-latency memory node capturing 500 MT/s burst streams from analog-to-digital converters. Use Value: Echo clocks (CQ/CQ#) and QVLD enable reliable capture in Xilinx Ultrascale+ GTY transceivers under neutron flux >10¹³ n/cm²/h. |
| Satellite Payload Command Processor | Nuclear Reactor Control System Cache |
Use Scenario: Holding validated command sequences and state-machine context for autonomous payload execution during ground station blackout periods. IC Role / Device Role / Timing Role: Radiation-hardened working memory for real-time OS kernel and deterministic task scheduler. Use Value: JTAG 1149.1 support enables in-system verification post-launch; DLL stability maintains timing closure across temperature (-55 °C to +125 °C). | Use Scenario: Caching safety-critical sensor fusion outputs in digital reactor protection systems where firmware updates require zero downtime. IC Role / Device Role / Timing Role: Fault-tolerant cache supporting triple-modular redundancy (TMR) voting logic with SECDED EDAC integration. Use Value: Soft error rate ≤1 × 10⁻¹⁰ upsets/bit-day with external EDAC meets IEC 61508 SIL-3 requirements for safety instrumented systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar radiation-hardened QDR SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV102418BLL-10TLI | Commercial-grade 1M × 18 QDR-II SRAM, 10 ns access, no RadStop™, 100-ball TQFP package | Lacks radiation qualification; limited to terrestrial industrial control or lab prototyping | Select only for non-radiation environments where cost and footprint constrain design |
| MT47H64M16HR-37E:H | DDR2 SDRAM, 64M × 16, 375 MHz, no concurrent R/W, no RadStop™, JEDEC-standard package | Higher density but asynchronous command protocol; requires refresh and suffers bus contention | Use only when system architecture mandates DRAM economics and can tolerate refresh overhead and latency variability |
Compared with IS61WV102418BLL-10TLI and MT47H64M16HR-37E:H, CYPT1542AV18-250GCMB uniquely delivers guaranteed radiation hardness, deterministic 2-cycle latency, and true concurrent R/W - making it irreplaceable in mission-critical space and nuclear applications where reliability outweighs cost or density trade-offs.
Availability
CYPT1542AV18-250GCMB is available at Aetrix Electronics and suitable for spacecraft onboard data buffers, high-energy physics detector memory subsystems, and satellite payload command processors requiring stable component supply across extended product lifecycles.
Supply support for CYPT1542AV18-250GCMB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and radiation-hardened memory solutions.
CYPT1542AV18-250GCMB belongs to Infineon's Rad-Hard QDR® II+ SRAM product line, engineered specifically for high-reliability aerospace and defense systems where deterministic timing, latch-up immunity, and TID tolerance are non-negotiable.
FAQ
What is the difference between CYPT1542AV18-250GCMB and CYRS1542AV18?
CYPT1542AV18-250GCMB is the non-qualified prototyping version of CYRS1542AV18, sharing identical functional behavior, timing, and electrical specs. The "PT" suffix indicates it is supplied in the same 165-ball CCGA package but without solder columns attached - intended for evaluation and early development prior to flight-qualified CYRS1542AV18 procurement.
Does CYPT1542AV18-250GCMB support JTAG boundary scan?
Yes - it implements full IEEE 1149.1 JTAG test access port with TCK, TMS, TDI, TDO, and TRST pins. Boundary scan supports production testing, interconnect verification, and in-system debugging of high-density PCBs used in radiation-hardened platforms.
Can CYPT1542AV18-250GCMB operate at 125 °C ambient temperature?
Yes - it is fully characterized and qualified for operation from –55 °C to +125 °C ambient. Its RadStop™ hardening and ceramic CCGA package ensure stable performance at maximum junction temperature, with latch-up immunity tested at 125 °C per MIL-STD-883 Method 1080.
Is external SECDED EDAC required for radiation tolerance?
External SECDED EDAC is required to achieve the stated soft error rate of ≤1 × 10⁻¹⁰ upsets/bit-day under heavy ion and proton irradiation. The device itself provides no on-die error correction - QVLD and echo clocks facilitate robust external EDAC implementation but do not replace it.
CYPT1542AV18-250GCMB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-BFCPGA
- Packaging:
- Tray
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 72Mbit
- Memory Organization:
- 4M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -55°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 165-CCGA (21x25)
CYPT1542AV18-250GCMB FAQ
1.How can I place an order for CYPT1542AV18-250GCMB through Aetrix?
Please submit a Request for Quotation (RFQ) for CYPT1542AV18-250GCMB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CYPT1542AV18-250GCMB reliable?
The price and inventory of CYPT1542AV18-250GCMB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CYPT1542AV18-250GCMB is usually 5 days.
3.What payment methods are accepted for CYPT1542AV18-250GCMB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CYPT1542AV18-250GCMB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CYPT1542AV18-250GCMB?
CYPT1542AV18-250GCMB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CYPT1542AV18-250GCMB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CYPT1542AV18-250GCMB?
For technical support, including CYPT1542AV18-250GCMB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CYPT1542AV18-250GCMB requirements.
6.How does Aetrix verify that CYPT1542AV18-250GCMB is sourced from the original manufacturer or authorized distributors?
All CYPT1542AV18-250GCMB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CYPT1542AV18-250GCMB meets industry standards.
7.What is the process for return or replacement of CYPT1542AV18-250GCMB?
All CYPT1542AV18-250GCMB units undergo pre-shipment inspection (PSI). If there is an issue with CYPT1542AV18-250GCMB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CYPT1542AV18-250GCMB part is unused and in its original packaging.
Return procedure for CYPT1542AV18-250GCMB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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