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Infineon Technologies CYPT1542AV18-250GCMB

Part No.:
CYPT1542AV18-250GCMB
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-BFCPGA
Datasheet:
AetrixCYPT1542AV18-250GCMB.pdf
Description:
IC SRAM 72MBIT PARALLEL 165CCGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,506

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Product details

Overview

CYPT1542AV18-250GCMB from Infineon Technologies (formerly Cypress) is a radiation-hardened 72-Mbit QDR® II+ SRAM with 4M × 18 organization, RadStop™ technology, 250 MHz clock frequency, and 165-ball CCGA package. It delivers concurrent read/write operations via independent DDR ports, supports two-word burst transfers, and operates at 1.8 V core / 1.4–1.8 V I/O with HSTL interfaces - deployed in spaceborne avionics data buffers requiring latch-up immunity >120 MeV·cm²/mg and total ionizing dose tolerance up to 300 krad(Si).

For engineers reviewing the CYPT1542AV18-250GCMB datasheet, CYPT1542AV18-250GCMB pinout, CYPT1542AV18-250GCMB application, or CYPT1542AV18-250GCMB equivalent, key selection criteria include radiation performance (neutron fluence 2.0 × 10¹⁴ n/cm²), DLL-enabled 2-cycle read latency, echo clock (CQ/CQ#) timing support, JTAG 1149.1 test access, and depth expansion via RPS/WPS controls.

Technical Context

This QDR II+ SRAM implements a synchronous pipelined architecture with physically separate read and write data paths, eliminating bus turnaround delays. It uses dual-edge-triggered DDR I/O on both ports at 250 MHz (500 MT/s), with address latching on K (rising edge for reads) and K# (falling edge for writes) - all synchronized to a single multiplexed A[20:0] bus.

The device integrates a delay-locked loop (DLL) for precise data placement, supports byte-write masking via BWS[1:0], and provides QVLD strobe for valid data indication. Its RadStop™ hardening enables operation under extreme radiation environments: SEL immunity at 125 °C, soft error rate ≤1 × 10⁻¹⁰ upsets/bit-day with external SECDED EDAC, and dose rate survivability up to 1.5 × 10¹¹ rad(Si)/sec.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density72 Mbit (4M × 18 organization)
Max Clock Frequency250 MHz - enables 500 MT/s DDR data rate per port
Rad-Hard PerformanceTotal ionizing dose = 300 krad(Si); latch-up immunity = 120 MeV·cm²/mg at 125 °C
Core / I/O VoltageVDD = 1.8 V ±0.1 V; VDDQ = 1.4–1.8 V - supports HSTL-18 I/O interface
Burst & LatencyTwo-word burst on all accesses; 2-cycle read latency with DLL enabled
Package165-ball Ceramic Column Grid Array (CCGA), 21 × 25 × 2.83 mm
Standards ComplianceIEEE 1149.1 JTAG boundary scan; RoHS-compliant ceramic packaging

Pinout & Package

Package: 165-ball Ceramic Column Grid Array (CCGA), 21 mm × 25 mm × 2.83 mm body height, column grid layout with solder columns (non-qualified prototyping variant CYPT1542AV18 uses same footprint without attached columns).

Pin/TerminalCircuit RoleDesign Meaning
D[17:0]Synchronous write data input18-bit parallel data sampled on rising edges of K/K# during active WPS; supports byte-write via BWS[1:0]
Q[17:0]Synchronous read data output18-bit DDR output registered to K/K#, strobed by QVLD and echoed by CQ/CQ# for timing margin
K / K#Differential input clocksK rising edge latches read addresses; K# falling edge latches write addresses - enables true concurrent R/W
CQ / CQ#Output echo clocksPhase-aligned copies of K/K# output with read data - simplifies high-speed capture in FPGA/ASIC receivers
RPS / WPSPort select controlsActive-low enables independent read/write port activation - essential for depth expansion and bank isolation
BWS[1:0]Byte write selectBWS0 controls D[8:0]; BWS1 controls D[17:9] - allows partial-word writes without read-modify-write overhead
QVLDValid data indicatorOutput pulse synchronized to Q[17:0] - signals when read data is stable and valid at receiver inputs
TCK/TMS/TDI/TDOJTAG test access portFully compliant IEEE 1149.1 boundary scan chain for production test and debug in radiation-hardened systems

Key Features

FeatureDesign Value
RadStop™ Radiation HardeningProprietary design/process hardening enabling 300 krad(Si) TID tolerance and SEL immunity >120 MeV·cm²/mg at 125 °C
True Concurrent Read/Write PortsIndependent DDR data paths eliminate bus turnaround - sustains full 500 MT/s bandwidth on both ports simultaneously
DLL-Based Timing PrecisionOn-chip delay-locked loop ensures <±50 ps data-to-clock alignment at 500 MT/s, critical for SERDES/FPGA interfacing
Two-Word Burst ArchitectureAll accesses deliver two sequential 18-bit words per clock cycle - doubles effective throughput vs. single-word devices
HSTL-18 I/O Interface1.4–1.8 V programmable drive strength with VREF termination - matches FPGA transceivers without level-shifting

Applications

Spacecraft Onboard Data BufferHigh-Energy Physics Detector Memory

Use Scenario: Real-time buffering of telemetry packets from multiple sensors before downlink compression and transmission.

IC Role / Device Role / Timing Role: High-bandwidth, radiation-tolerant SRAM serving as primary packet staging buffer with deterministic 2-cycle latency.

Use Value: Concurrent R/W eliminates arbitration stalls; RadStop™ ensures >10-year mission life in GEO orbit without SEU-induced corruption.

Use Scenario: Storing triggered event data from silicon strip detectors in particle collider front-end electronics.

IC Role / Device Role / Timing Role: Low-latency memory node capturing 500 MT/s burst streams from analog-to-digital converters.

Use Value: Echo clocks (CQ/CQ#) and QVLD enable reliable capture in Xilinx Ultrascale+ GTY transceivers under neutron flux >10¹³ n/cm²/h.

Satellite Payload Command ProcessorNuclear Reactor Control System Cache

Use Scenario: Holding validated command sequences and state-machine context for autonomous payload execution during ground station blackout periods.

IC Role / Device Role / Timing Role: Radiation-hardened working memory for real-time OS kernel and deterministic task scheduler.

Use Value: JTAG 1149.1 support enables in-system verification post-launch; DLL stability maintains timing closure across temperature (-55 °C to +125 °C).

Use Scenario: Caching safety-critical sensor fusion outputs in digital reactor protection systems where firmware updates require zero downtime.

IC Role / Device Role / Timing Role: Fault-tolerant cache supporting triple-modular redundancy (TMR) voting logic with SECDED EDAC integration.

Use Value: Soft error rate ≤1 × 10⁻¹⁰ upsets/bit-day with external EDAC meets IEC 61508 SIL-3 requirements for safety instrumented systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar radiation-hardened QDR SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61WV102418BLL-10TLICommercial-grade 1M × 18 QDR-II SRAM, 10 ns access, no RadStop™, 100-ball TQFP packageLacks radiation qualification; limited to terrestrial industrial control or lab prototypingSelect only for non-radiation environments where cost and footprint constrain design
MT47H64M16HR-37E:HDDR2 SDRAM, 64M × 16, 375 MHz, no concurrent R/W, no RadStop™, JEDEC-standard packageHigher density but asynchronous command protocol; requires refresh and suffers bus contentionUse only when system architecture mandates DRAM economics and can tolerate refresh overhead and latency variability

Compared with IS61WV102418BLL-10TLI and MT47H64M16HR-37E:H, CYPT1542AV18-250GCMB uniquely delivers guaranteed radiation hardness, deterministic 2-cycle latency, and true concurrent R/W - making it irreplaceable in mission-critical space and nuclear applications where reliability outweighs cost or density trade-offs.

Availability

CYPT1542AV18-250GCMB is available at Aetrix Electronics and suitable for spacecraft onboard data buffers, high-energy physics detector memory subsystems, and satellite payload command processors requiring stable component supply across extended product lifecycles.

Supply support for CYPT1542AV18-250GCMB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and radiation-hardened memory solutions.

CYPT1542AV18-250GCMB belongs to Infineon's Rad-Hard QDR® II+ SRAM product line, engineered specifically for high-reliability aerospace and defense systems where deterministic timing, latch-up immunity, and TID tolerance are non-negotiable.

FAQ

What is the difference between CYPT1542AV18-250GCMB and CYRS1542AV18?

CYPT1542AV18-250GCMB is the non-qualified prototyping version of CYRS1542AV18, sharing identical functional behavior, timing, and electrical specs. The "PT" suffix indicates it is supplied in the same 165-ball CCGA package but without solder columns attached - intended for evaluation and early development prior to flight-qualified CYRS1542AV18 procurement.

Does CYPT1542AV18-250GCMB support JTAG boundary scan?

Yes - it implements full IEEE 1149.1 JTAG test access port with TCK, TMS, TDI, TDO, and TRST pins. Boundary scan supports production testing, interconnect verification, and in-system debugging of high-density PCBs used in radiation-hardened platforms.

Can CYPT1542AV18-250GCMB operate at 125 °C ambient temperature?

Yes - it is fully characterized and qualified for operation from –55 °C to +125 °C ambient. Its RadStop™ hardening and ceramic CCGA package ensure stable performance at maximum junction temperature, with latch-up immunity tested at 125 °C per MIL-STD-883 Method 1080.

Is external SECDED EDAC required for radiation tolerance?

External SECDED EDAC is required to achieve the stated soft error rate of ≤1 × 10⁻¹⁰ upsets/bit-day under heavy ion and proton irradiation. The device itself provides no on-die error correction - QVLD and echo clocks facilitate robust external EDAC implementation but do not replace it.

CYPT1542AV18-250GCMB Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-BFCPGA
Packaging:
Tray
Product Status:
Discontinued at Digi-Key
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
72Mbit
Memory Organization:
4M x 18
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-55°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
165-CCGA (21x25)

CYPT1542AV18-250GCMB FAQ

1.How can I place an order for CYPT1542AV18-250GCMB through Aetrix?

Please submit a Request for Quotation (RFQ) for CYPT1542AV18-250GCMB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CYPT1542AV18-250GCMB reliable?

The price and inventory of CYPT1542AV18-250GCMB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CYPT1542AV18-250GCMB is usually 5 days.

3.What payment methods are accepted for CYPT1542AV18-250GCMB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CYPT1542AV18-250GCMB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CYPT1542AV18-250GCMB?

CYPT1542AV18-250GCMB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CYPT1542AV18-250GCMB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CYPT1542AV18-250GCMB?

For technical support, including CYPT1542AV18-250GCMB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CYPT1542AV18-250GCMB requirements.

6.How does Aetrix verify that CYPT1542AV18-250GCMB is sourced from the original manufacturer or authorized distributors?

All CYPT1542AV18-250GCMB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CYPT1542AV18-250GCMB meets industry standards.

7.What is the process for return or replacement of CYPT1542AV18-250GCMB?

All CYPT1542AV18-250GCMB units undergo pre-shipment inspection (PSI). If there is an issue with CYPT1542AV18-250GCMB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CYPT1542AV18-250GCMB part is unused and in its original packaging.

Return procedure for CYPT1542AV18-250GCMB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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