Infineon Technologies CYRS1544AV18-250GCMB

Overview

CYRS1544AV18-250GCMB from Infineon Technologies (formerly Cypress) is a radiation-hardened 72-Mbit QDR® II+ SRAM with 2M × 36 organization, 250-MHz clock frequency, RadStop™ technology, and 165-ball CCGA package. It delivers concurrent read/write throughput via separate DDR ports, supports echo clocks (CQ/CQ#) and DLL-based timing alignment, and is qualified for high-reliability aerospace and defense systems requiring latch-up immunity ≥120 MeV·cm²/mg at 125 °C.

For engineers reviewing the CYRS1544AV18-250GCMB datasheet, CYRS1544AV18-250GCMB pinout, CYRS1544AV18-250GCMB application, or CYRS1544AV18-250GCMB equivalent, key selection criteria include total ionizing dose tolerance (300 krad), neutron fluence survivability (2.0 × 10¹⁴ n/cm²), soft error rate under heavy ion/proton irradiation, HSTL I/O compliance, and JTAG 1149.1 test access support.

Technical Context

The device implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed address bus-read addresses latched on K rising edge, write addresses on K# rising edge. Its two-word burst transfers 72-bit data per access (36-bit × 2), achieving 500 MT/s effective data rate via DDR interfaces on both ports.

RadStop™ hardening enables operation in extreme radiation environments: SEL immunity up to 120 MeV·cm²/mg, TID tolerance of 300 krad(Si), and neutron fluence survival to 2.0 × 10¹⁴ n/cm². The integrated DLL ensures precise data placement, while echo clocks (CQ/CQ#) simplify high-speed capture in FPGA- or ASIC-based memory controllers.

Key Specifications

Pinout & Package

Package: 165-ball Ceramic Column Grid Array (CCGA), 21 mm × 25 mm × 2.83 mm, RoHS-compliant, hermetically sealed.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar radiation-hardened QDR SRAM applications.

Compared with IS61WV102432ALL-15BLI and RT102432B-250GCMB, CYRS1544AV18-250GCMB uniquely delivers 500 MT/s bandwidth *with* full MIL-PRF-38535 Class V radiation qualification - making it the only option for new high-throughput spaceflight designs requiring both speed and hardness.

Availability

CYRS1544AV18-250GCMB is available at Aetrix Electronics and suitable for space telemetry buffering, radar signal processing, and nuclear I&C systems requiring stable component supply across extended product lifecycles and rigorous environmental screening.

Supply support for CYRS1544AV18-250GCMB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and radiation-hardened memory solutions for aerospace, defense, and industrial markets.

CYRS1544AV18-250GCMB belongs to Infineon's RadHard Memory portfolio - engineered specifically for mission-critical systems where data integrity under ionizing radiation, extreme temperature, and high neutron flux is non-negotiable.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The CYRS1544AV18-250GCMB is qualified for operation from –55 °C to +125 °C case temperature. Maximum junction temperature is calculated using θ_JA = 12 °C/W and typical power dissipation of 2.1 W under concurrent R/W at 250 MHz, yielding T_J ≤ 139 °C - within safe silicon limits per MIL-PRF-38535 screening requirements.

Does the device support asynchronous reset or power-on initialization sequences?

No. CYRS1544AV18-250GCMB requires a synchronous power-up sequence: VDD must stabilize before VDDQ, followed by 100 µs delay, then 1024 K-clock cycles with NOP commands before issuing first valid access. This sequence initializes the DLL and internal registers per datasheet Section 21.

Can BWS[3:0] be used to perform partial writes to individual 9-bit nibbles within a 36-bit word?

Yes. Each BWS signal controls a dedicated 9-bit lane: BWS0 → D[8:0], BWS1 → D[17:9], BWS2 → D[26:18], BWS3 → D[35:27]. Asserting only BWS0 and BWS2 writes bytes 0 and 2 while preserving bytes 1 and 3 - enabling atomic updates to specific functional fields in protocol headers or status registers.

Is the ZQ pin required for operation, or only for impedance calibration?

ZQ is mandatory for production use. It connects to an external 240 Ω ±1% resistor to calibrate on-die termination (ODT) for HSTL outputs. Omitting ZQ disables ODT, causing signal integrity degradation beyond 15 cm trace length or >2 load fanout - violating JEDEC HSTL Class I specifications.