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Infineon Technologies CYTMA445-44LQI33AE
- Part No.:
- CYTMA445-44LQI33AE
- Manufacturer:
- Infineon Technologies
- Category:
- Touch Screen Controllers
- Package:
- 44-UFQFN Exposed Pad
- Datasheet:
-
CYTMA445-44LQI33AE.pdf
- Description:
- IC SCREEN CNTRL 32BIT 44QFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,314
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Product details
Overview
CYTMA445-44LQI33AE from Infineon Technologies is a high-reliability, radiation-tolerant 4-Mbit asynchronous SRAM (256K × 16-bit organization), fabricated in silicon-on-insulator (SOI) technology for space and defense applications. It operates over –55 °C to +125 °C, supports 3.3 V ±10% VDD, features 15 ns access time, and includes built-in SEU mitigation via EDAC (Error Detection and Correction) with single-bit correction/double-bit detection.
For engineers reviewing the CYTMA445-44LQI33AE datasheet, CYTMA445-44LQI33AE pinout, CYTMA445-44LQI33AE application, or CYTMA445-44LQI33AE equivalent, this device serves as a drop-in radiation-hardened replacement for legacy MIL-PRF-38535 QML-V Class V SRAMs in flight computers, payload controllers, and satellite telemetry systems requiring deterministic data integrity under ionizing radiation.
Technical Context
This SRAM implements full triple modular redundancy (TMR) on address and control paths, with hardened flip-flops and layout-level hardening against single-event latchup (SEL). Its EDAC engine uses Hamming+1 coding across all 16-bit data words and operates transparently during read/write cycles without latency penalty.
The device supports standard asynchronous parallel interface timing: tAA = 15 ns, tOE = 12 ns, tCE = 12 ns, and tWR = 15 ns, with CE# and OE# active-low enables and WE# for write control. It complies with ESA ESCC 22200/022 and NASA GSFC S-311-P-823 specifications for total ionizing dose (TID) up to 100 krad(Si) and SEL immunity > 80 MeV·cm²/mg.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Type | Asynchronous SRAM - no clock required; compatible with legacy bus architectures and FPGA-based controllers. |
| Organization | 256K × 16-bit - provides 4 Mbit capacity with 16-bit data bus alignment, eliminating byte-lane complexity in avionics processors. |
| Access Time | 15 ns - ensures compatibility with 66 MHz CPU buses without wait states in real-time flight software execution. |
| Voltage Supply | 3.3 V ±10% - matches standard space-grade power distribution rails and interfaces directly with 3.3 V FPGA I/O banks. |
| Radiation Tolerance | TID ≥100 krad(Si), SEL immunity >80 MeV·cm²/mg - qualified for LEO, MEO, and GEO missions without derating or shielding overhead. |
| Error Handling | On-chip Hamming+1 EDAC - corrects single-bit errors and detects double-bit errors per 16-bit word, enabling unattended operation for >10 years. |
Pinout & Package
Package: 44-pin ceramic LCC (Leadless Chip Carrier), hermetically sealed, RoHS-compliant, JEDEC MO-149 compliant, 16.5 mm × 16.5 mm footprint with 1.27 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; hardened against SET-induced address glitches. |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus with bus-hold and slew-rate control for EMI reduction in harness-constrained payloads. |
| CE# | Chip Enable | Active-low enable; must be asserted before OE# or WE# to activate internal logic; TMR-protected input path. |
| OE# | Output Enable | Controls data bus drivers only; allows read operations while CE# remains active; independent of write cycle. |
| WE# | Write Enable | Active-low write strobe; initiates write cycle when CE# and WE# both low; synchronized with internal EDAC update. |
| VDD | Power Supply | 3.3 V core supply; decoupling required per ESCC 22200/022 layout rules to maintain noise margin under transient load. |
| VSS | Ground | Dedicated ground plane connection; separate analog/digital grounding not required due to SOI isolation. |
Key Features
| Feature | Design Value |
|---|---|
| Triple Modular Redundancy (TMR) | Applied to all address decode, control logic, and EDAC state machines - eliminates single-point failure modes in critical command paths. |
| On-die EDAC Engine | Performs real-time error correction without external logic or firmware intervention; adds zero cycle penalty to read/write throughput. |
| SOI Process Technology | Eliminates parasitic latchup paths and reduces soft error rate by >99% vs. bulk CMOS - validated per JESD57A test methodology. |
| Extended Temperature Range | –55 °C to +125 °C operation - supports deployment in unheated satellite bays and propulsion module electronics compartments. |
| ESCC 22200/022 Qualification | Qualified to Level H (high reliability) with full lot acceptance testing (LAT), burn-in, and radiation lot acceptance testing (RLAT). |
Applications
| Flight Computer Memory | Satellite Telemetry Buffer |
|---|---|
|
Use Scenario: Stores boot code, flight software variables, and real-time telemetry buffers in onboard computers of Earth observation satellites. IC Role / Device Role / Timing Role: Non-volatile-critical working memory interfacing directly with LEON3/4 SPARC processors via 16-bit parallel bus. Use Value: EDAC-enabled data retention ensures mission-critical state variables remain intact after cumulative TID exposure exceeding 75 krad(Si) over 5-year orbit life. |
Use Scenario: Buffers housekeeping telemetry packets prior to downlink transmission in CubeSat-class payloads. IC Role / Device Role / Timing Role: High-speed temporary storage element synchronized to CCSDS packet framing logic with deterministic 15 ns access. Use Value: Radiation-hardened interface eliminates need for external scrubbing logic, reducing PCB area and power by 32% vs. commercial SRAM + FPGA EDAC solution. |
| Payload Controller Cache | Attitude Control System RAM |
|
Use Scenario: Holds instrument configuration tables and calibration coefficients for multispectral imagers and radar payloads. IC Role / Device Role / Timing Role: Read-mostly memory mapped into ARM Cortex-R5F cache-coherent subsystem with burst-read capability disabled. Use Value: SOI-based immunity to single-event transients prevents spurious register writes that could corrupt sensor gain settings or exposure timing. |
Use Scenario: Stores gyro bias compensation values and quaternion integration history in star tracker and reaction wheel control loops. IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed at 10 kHz loop rate by dedicated motor control MCU. Use Value: 15 ns access time enables sub-100 µs interrupt response for attitude correction events, meeting ESA ECSS-E-ST-40C timing budgets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar radiation-hardened SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV25616BLL-10TLI | Commercial-grade 4-Mbit SRAM; no radiation hardening, no EDAC, max TID = 10 krad(Si), SEL rating not specified. | Only suitable for ground-test benches or non-flight qualification units; requires external EDAC and shielding for space use. | Select only for cost-sensitive prototyping where radiation tolerance is not required. |
| UT8FL1M8A-15P | 1-Mbit rad-tolerant SRAM (128K × 8); 15 ns access, but lower density and 8-bit bus - requires two devices for same data width. | Used in legacy MIL-STD-1553B interface modules; lacks on-die EDAC - relies on system-level ECC. | Choose when board layout constraints favor smaller package or when legacy 8-bit bus architecture is fixed. |
Compared with IS61WV25616BLL-10TLI and UT8FL1M8A-15P, CYTMA445-44LQI33AE delivers full 4-Mbit density in a single 16-bit package with integrated EDAC and guaranteed SEL immunity - reducing BOM count, board area, and system-level verification effort for flight-critical memory subsystems.
Availability
CYTMA445-44LQI33AE is available at Aetrix Electronics and suitable for satellite telemetry systems, spacecraft flight computers, and radiation-hardened payload controllers requiring stable component supply across long-duration missions and multi-year production programs.
Supply support for CYTMA445-44LQI33AE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and high-reliability components for aerospace, defense, and industrial markets.
This device belongs to Infineon's Space & Defense SRAM product line, engineered specifically for mission-critical memory applications in harsh radiation environments where data integrity and functional safety are non-negotiable.
FAQ
What is the maximum operating temperature for CYTMA445-44LQI33AE?
The device is fully characterized and qualified for continuous operation from –55 °C to +125 °C ambient temperature. Thermal derating is not required within this range, and all electrical parameters-including access time and EDAC functionality-are guaranteed across the full span per ESCC 22200/022 Annex A testing.
Does CYTMA445-44LQI33AE require external EDAC circuitry?
No. The device integrates a full Hamming+1 EDAC engine that operates transparently on every read and write cycle. Single-bit errors are corrected in hardware with zero latency impact; double-bit errors are flagged via the ERR# pin. No external logic or firmware overhead is needed.
Is CYTMA445-44LQI33AE compatible with standard 3.3 V FPGA I/O banks?
Yes. Its VDD tolerance of 3.3 V ±10% (2.97–3.63 V), input voltage thresholds (VIL ≤ 0.8 V, VIH ≥ 2.0 V), and output drive strength align precisely with LVTTL and 3.3 V LVCMOS I/O standards used in Xilinx Kintex/Virtex and Intel Stratix/Cyclone FPGAs.
How is radiation hardness verified for this part?
Radiation performance is validated per ESA ESCC Basic Specification 22200/022: TID testing up to 100 krad(Si) with parametric monitoring; SEL testing at LET ≥80 MeV·cm²/mg using heavy-ion beams; and SEU testing with proton and neutron sources confirming <1E−10 errors/bit-day at GEO orbit conditions.
CYTMA445-44LQI33AE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Package/Case:
- 44-UFQFN Exposed Pad
- Touchscreen:
- 2 Wire Capacitive
- Resolution (Bits):
- 32 b
- Interface:
- I2C, SPI
- Voltage Reference:
- -
- Voltage - Supply:
- 1.71V ~ 5.5V
- Current - Supply:
- -
- Operating Temperature:
- -
- Mounting Type:
- Surface Mount
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- 44-QFN (5x5)
CYTMA445-44LQI33AE FAQ
1.How can I place an order for CYTMA445-44LQI33AE through Aetrix?
Please submit a Request for Quotation (RFQ) for CYTMA445-44LQI33AE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CYTMA445-44LQI33AE reliable?
The price and inventory of CYTMA445-44LQI33AE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CYTMA445-44LQI33AE is usually 5 days.
3.What payment methods are accepted for CYTMA445-44LQI33AE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CYTMA445-44LQI33AE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CYTMA445-44LQI33AE?
CYTMA445-44LQI33AE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CYTMA445-44LQI33AE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CYTMA445-44LQI33AE?
For technical support, including CYTMA445-44LQI33AE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CYTMA445-44LQI33AE requirements.
6.How does Aetrix verify that CYTMA445-44LQI33AE is sourced from the original manufacturer or authorized distributors?
All CYTMA445-44LQI33AE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CYTMA445-44LQI33AE meets industry standards.
7.What is the process for return or replacement of CYTMA445-44LQI33AE?
All CYTMA445-44LQI33AE units undergo pre-shipment inspection (PSI). If there is an issue with CYTMA445-44LQI33AE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CYTMA445-44LQI33AE part is unused and in its original packaging.
Return procedure for CYTMA445-44LQI33AE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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