Renesas D13002F10V

Overview

D13002F10V from Fairchild Semiconductor is an NPN triple-diffused planar silicon transistor designed for high-voltage horizontal deflection in color display systems, featuring V_CBO = 1550 V, V_CEO = 750 V, I_C = 10 A (DC), P_C = 60 W, and t_F = 0.2 µs (max) for fast switching in CRT monitor output stages.

For engineers reviewing the D13002F10V datasheet, D13002F10V pinout, D13002F10V application, or D13002F10V equivalent, key selection criteria include high-voltage blocking capability, pulse current handling up to 20 A, thermal resistance of 2.08 °C/W, saturation voltage under 3 V at 6 A, and TO-3PF package compatibility with heatsink mounting in legacy display power circuits.

Technical Context

This transistor operates as a high-voltage switch in horizontal deflection yoke drive circuits, where rapid turn-off (t_F ≤ 0.2 µs) and low storage time (t_STG ≤ 3 µs) minimize retrace distortion. It sustains repetitive 200 V collector pulses with 6 A load current and reverse base drive (–2.4 A) for controlled commutation.

Its rugged triple-diffused structure supports safe operating area (SOA) compliance up to 1000 V × 10 A in single-pulse mode, with junction temperature rated to 150 °C and storage range from –55 °C to +150 °C - critical for thermally demanding CRT flyback environments.

Key Specifications

Pinout & Package

Supplied in TO-3PF metal can package with isolated tab, featuring integral mounting hole and standardized 15.5 mm × 26.5 mm footprint for mechanical compatibility with legacy CRT chassis heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching transistor applications.

Compared with BU2520DX and 2SC5148, the D13002F10V offers optimal balance of 1550 V V_CBO, 750 V V_CEO, 20 A pulse capability, and 0.2 µs t_F - making it the most suitable choice for modern CRT repair and high-fidelity horizontal deflection where both voltage headroom and switching speed are critical.

Availability

D13002F10V is available at Aetrix Electronics and suitable for CRT monitor repair, industrial high-voltage pulse generation, and legacy display system maintenance requiring stable component supply and long-term obsolescence mitigation.

Supply support for D13002F10V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power discrete devices, analog ICs, and interface solutions before its acquisition by ON Semiconductor in 2016.

The D13002F10V belongs to Fairchild's high-voltage horizontal deflection transistor product line, engineered specifically for reliability and timing precision in analog CRT display output stages.

FAQ

What is the maximum collector-emitter voltage rating for D13002F10V?

The D13002F10V has a maximum collector-emitter voltage (V_CEO) rating of 750 V at T_C = 25 °C. This rating applies under DC conditions and defines the upper limit for safe operation in horizontal deflection circuits where flyback voltage peaks occur. Exceeding this voltage risks avalanche breakdown and permanent device failure. The D13002F10V must be used with appropriate snubber networks and voltage clamping when deployed in systems approaching this limit.

Does D13002F10V support pulse current operation beyond its DC rating?

Yes, the D13002F10V supports pulsed collector current up to 20 A (I_CP), specified under pulse test conditions of 5 ms width and duty cycle < 10%. This capability enables robust performance during horizontal trace intervals in CRT applications where peak currents exceed the 10 A DC rating. Thermal design must account for RMS current and duty cycle to avoid junction overheating, especially given the device's 2.08 °C/W R_θjC.

What is the pin configuration of D13002F10V and how is it mounted?

The D13002F10V uses a TO-3PF package with pinout Base–Collector–Emitter (1–2–3) when viewed from the front with leads down and tab facing outward. The metal case is electrically isolated from the collector, allowing direct heatsink mounting without insulating washers. Mounting torque must not exceed 1.0 N·m to prevent package deformation, and thermal compound should be applied evenly to ensure R_θjC remains at 2.08 °C/W as specified.

Can D13002F10V replace BU2520DX in existing CRT designs?

Yes, the D13002F10V is a functional and mechanical replacement for BU2520DX in most CRT horizontal output stages. Both share TO-3PF packaging, B–C–E pinout, and 10 A DC collector current rating. However, the D13002F10V offers higher V_CBO (1550 V vs. 1500 V) and faster t_F (0.2 µs vs. 0.3 µs), improving retrace performance. Verify base drive capability matches the D13002F10V's 1.5 A requirement before substitution.

What thermal derating applies to D13002F10V above 25°C case temperature?

The D13002F10V's collector power dissipation (P_C) must be linearly derated above 25 °C case temperature at 0.48 W/°C, based on its 2.08 °C/W R_θjC and 150 °C maximum junction temperature. At T_C = 100 °C, maximum allowable P_C drops to approximately 36 W. This derating curve is defined in Figure 11 of the datasheet and must be applied in enclosed or high-ambient environments to prevent thermal runaway.