Renesas D13002F17V

Overview

D13002F17V from International Rectifier is an insulated gate bipolar transistor (IGBT) with integrated ultrafast soft-recovery anti-parallel diode in TO-220AB package, rated for 600 V V_CES, 7.6 A continuous collector current at T_C = 100°C, and 10 µs short-circuit withstand capability at T_J = 150°C. It delivers V_CE(on) = 2.5 V (typ.) at I_C = 4.0 A, V_GE = 15 V, T_J = 150°C, and is optimized for motor control inverters requiring rugged switching and low EMI.

For engineers reviewing the D13002F17V datasheet, D13002F17V pinout, D13002F17V application, or D13002F17V equivalent, key selection criteria include its square RBSOA, positive V_CE(on) temperature coefficient for stable parallel operation, 175°C maximum junction temperature rating, and ultrafast diode recovery (t_rr = 93 ns, E_rec = 81 µJ at T_J = 150°C).

Technical Context

This IGBT employs non-punch-through (NPT) technology with a monolithic co-packaged ultrafast soft-recovery diode, enabling high-voltage blocking (600 V), controlled turn-off tail current, and low reverse recovery losses. Its gate threshold voltage (V_GE(th)) is 4.5 V (typ.), with a negative temperature coefficient (–8.1 mV/°C), ensuring predictable turn-on behavior across temperature.

The device features full square reverse bias safe operating area (RBSOA) up to 600 V and 22 A at T_J = 150°C, and short-circuit safe operating area (SCSOA) rated for 10 µs at V_p = 600 V and T_J = 150°C. Thermal resistance from junction-to-case is 2.4 °C/W (IGBT) and 6.1 °C/W (diode), supporting robust thermal management in compact motor drive modules.

Key Specifications

Pinout & Package

Package: TO-220AB - Through-hole, single-ended, isolated tab (collector connected to tab), standard 3-pin outline with fourth collector tie-bar for enhanced current handling and thermal path. Mounting flange is electrically connected to collector (pin 2 and pin 4).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with D13002F17V, IRGB4B60KD1PbF offers identical performance with updated compliance labeling, while STGW40H65DFB provides higher power handling at the cost of increased gate drive complexity and board space-making D13002F17V optimal for cost-sensitive <5 kW motor drives where thermal and SOA margins are well established.

Availability

D13002F17V is available at Aetrix Electronics and suitable for industrial motor inverters, appliance motor drives, and power tool controllers requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for D13002F17V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) is a semiconductor manufacturer specializing in power management solutions, with leadership in IGBTs, MOSFETs, and intelligent power modules for industrial and automotive markets.

D13002F17V belongs to the IRGB/S/SL4B60KD1 family of 600 V NPT IGBTs with co-packaged diodes, designed specifically for cost-optimized, thermally efficient motor control inverters in white goods and industrial automation.

FAQ

What is the maximum junction temperature rating for D13002F17V?

The D13002F17V has a maximum rated junction temperature of +175°C, confirmed in the Absolute Maximum Ratings table. This allows operation in high-ambient environments such as enclosed motor drive cabinets or under-hood industrial equipment, provided thermal design maintains T_J ≤ 175°C under worst-case load and ambient conditions. The D13002F17V datasheet specifies derating curves for power dissipation versus case temperature.

Does D13002F17V include an integrated diode, and what are its key recovery characteristics?

Yes, the D13002F17V integrates an ultrafast soft-recovery anti-parallel diode. At T_J = 150°C, it exhibits t_rr = 93 ns (typ.), I_rr = 6.3 A (typ.), and E_rec = 81 µJ (typ.). These values are measured under standardized conditions (V_CC = 400 V, I_F = 4.0 A, diF/dt = 100 A/µs) and directly impact EMI and voltage overshoot in inductive switching circuits. The D13002F17V diode recovery waveform is documented in Figure WF3.

What is the short-circuit withstand capability of D13002F17V, and under what conditions is it specified?

The D13002F17V provides >10 µs short-circuit safe operating area (SCSOA) at T_J = 150°C, V_p = 600 V, and R_G = 100 Ω, per Figure CT3 and the Electrical Characteristics table. This rating assumes clamped inductive load testing with gate drive maintained at 15 V. The D13002F17V does not require external desaturation detection for basic fault response within this window, simplifying protection circuitry in cost-sensitive motor drives.

Is D13002F17V pin-compatible with other packages in the same family, such as TO-262 or D2Pak?

No, D13002F17V is packaged in TO-220AB and is not pin-compatible with IRGS4B60KD1PbF (TO-262) or IRGSL4B60KD1PbF (D2Pak). Although all three share identical die and electrical specifications, their pinouts differ: TO-220AB uses pins 1–3–4 (G–C–E–C), TO-262 uses G–C–E (3-pin), and D2Pak uses G–C–E with different mechanical footprint and thermal pad configuration. PCB layout and heatsink mounting must be redesigned for each package. The D13002F17V datasheet confirms TO-220AB as its sole mechanical form factor.

What gate drive voltage range is recommended for reliable operation of D13002F17V?

The D13002F17V specifies ±20 V maximum gate-to-emitter voltage (V_GE), with typical turn-on achieved at V_GE ≥ 15 V. Gate threshold voltage is 4.5 V (typ.), and the device exhibits a negative V_GE(th) temperature coefficient (–8.1 mV/°C). For robust noise immunity and low V_CE(on), a nominal +15 V turn-on and –5 V to –8 V turn-off voltage is recommended, matching the test conditions used in switching loss and SOA characterization. The D13002F17V gate charge curve (Figure 23) confirms 12 nC total charge at 15 V drive.