Diodes Incorporated D3Z4V7BF-7

Overview

D3Z4V7BF-7 from Diodes Incorporated is a precision 4.7 V Zener diode in SOD323F package, rated for 400 mW power dissipation, ±2.1% zener voltage tolerance (4.55–4.75 V at 5 mA), and 90 Ω dynamic impedance at test current, used for voltage regulation and reference in low-power analog circuits.

For engineers reviewing the D3Z4V7BF-7 datasheet, D3Z4V7BF-7 pinout, D3Z4V7BF-7 application, or D3Z4V7BF-7 equivalent, key selection criteria include tight V_Z tolerance, low Z_ZT, temperature coefficient of –1.1 mV/°C, cathode-band polarity marking, and SOD323F footprint compatibility with automated SMT assembly.

Technical Context

This device operates as a two-terminal voltage reference, conducting in reverse breakdown at precisely controlled V_Z with minimal variation over temperature (TC = –1.1 mV/°C) and current. Its 90 Ω zener impedance at 5 mA ensures stable regulation under small-signal load changes.

The SOD323F package enables high-density placement on FR-4 PCBs, with thermal resistance R_θJA = 312.5 °C/W and full compliance to AEC-Q200 stress testing when qualified - supporting automotive and industrial applications requiring long-term stability and traceable sourcing.

Key Specifications

Pinout & Package

Package: SOD323F - surface-mount plastic package with cathode band marking, 0.01 g mass, UL 94V-0 rating, and J-STD-020 Level 1 moisture sensitivity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar precision Zener reference applications.

Compared with BZX84-C4V7LT1G and MMSZ4704T1G, D3Z4V7BF-7 delivers superior voltage accuracy (±2.1% vs. ±5%), identical Z_ZT, and optimized SOD323F size for high-density layouts - making it preferred for precision analog references where thermal and spatial constraints apply.

Availability

D3Z4V7BF-7 is available at Aetrix Electronics and suitable for industrial sensor conditioning, automotive body control modules, USB-C PD protection circuits, and medical wearable battery management systems requiring stable component supply and AEC-Q200-aligned sourcing.

Supply support for D3Z4V7BF-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

This part belongs to the D3Z series of precision Zener diodes - engineered specifically for high-accuracy voltage referencing in space-constrained, thermally demanding environments such as automotive ECUs and portable medical electronics.

FAQ

What is the maximum continuous reverse current this Zener can handle before degradation?

The D3Z4V7BF-7 is rated for 400 mW power dissipation at 25°C ambient. At its nominal 4.7 V zener voltage, this corresponds to a maximum continuous reverse current of approximately 85 mA (400 mW ÷ 4.7 V). Derating per Fig. 1 applies above 25°C, reducing allowable current linearly with rising ambient temperature.

Does this part meet AEC-Q200 requirements for automotive use?

Yes - Diodes Incorporated offers AEC-Q200-qualified versions of the D3Z series, including D3Z4V7BF-7, manufactured in IATF 16949-certified facilities. Qualification covers temperature cycling, humidity testing, and mechanical shock per AEC-Q200 Rev. D, with PPAP documentation available upon request.

How does the –1.1 mV/°C temperature coefficient affect circuit accuracy over –40°C to +125°C?

Over that 165°C span, the total V_Z shift is approximately –182 mV (–1.1 mV/°C × 165°C), or –3.9% of nominal 4.7 V. This is within specification for many non-critical references; for higher stability, pair with a complementary TC component or use in closed-loop compensation schemes.

Can this Zener be used in forward-bias mode as a general-purpose diode?

Yes - its forward voltage is 0.9 V at 10 mA, matching typical silicon diode behavior. However, it is not optimized for forward conduction: no specified I_F surge rating or reverse recovery time, and its primary design intent remains precision reverse-bias regulation.