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onsemi D45H11
- Part No.:
- D45H11
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-220-3
- Datasheet:
-
D45H11.pdf
- Description:
- TRANS PNP 80V 10A TO-220
- Quantity:
- Payment:
- Shipping:
Inventory:7,619
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Product details
Overview
D45H11 from ON Semiconductor is a PNP bipolar junction transistor (BJT) designed for high-current power amplification, linear regulator, and fast-switching applications. It delivers -10 A continuous collector current, -80 V collector-emitter breakdown voltage, 60 W total power dissipation, 40 MHz current gain bandwidth, and -1.0 V collector-emitter saturation voltage at IC = -8 A/IB = -0.4 A - enabling robust performance in audio output stages and DC-DC switching regulators.
For engineers reviewing the D45H11 datasheet, pinout, applications, or equivalent options, this page provides verified technical context, TO-220 package mapping, real-world use scenarios, and validated alternative transistors with documented parameter differences - all grounded in Fairchild/ON Semiconductor's official Rev. 1.2.0 specification.
Technical Context
The D45H11 is a silicon PNP power transistor fabricated using Fairchild's process 5Q, optimized for low VCE(sat) and fast switching speed. Its hFE ranges from 40 to 60 at VCE = -1 V and IC = -4 A to -2 A, supporting stable DC biasing in Class AB amplifier outputs and active-passive hybrid regulator topologies.
Thermal design is enabled by RθJC = 2.1 °C/W and RθJA = 62.5 °C/W (on FR-4 PCB with 6 cm² collector pad), allowing operation up to +150 °C junction temperature. The device exhibits fT = 40 MHz under IC = -500 mA/VCE = -10 V conditions, confirming suitability for medium-frequency switching above 100 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | -80 V - Maximum reverse-biased collector-emitter voltage before breakdown; defines safe operating range in high-voltage PNP switch or regulator configurations. |
| IC (cont.) | -10 A - Continuous collector current rating; supports high-power audio drivers and industrial motor control pre-drivers without forced cooling. |
| PD | 60 W - Total device power dissipation at TA = 25 °C; requires heatsinking for sustained operation above ~25 °C ambient. |
| VCE(sat) | -1.0 V @ IC = -8 A, IB = -0.4 A - Low saturation voltage minimizes conduction loss and thermal stress in linear and switching modes. |
| fT | 40 MHz - Current gain bandwidth product; enables stable gain in audio frequency amplifiers and sub-100 kHz SMPS error amplifiers. |
| RθJC | 2.1 °C/W - Junction-to-case thermal resistance; confirms efficient heat transfer to external heatsink when mounted per JEDEC TO-220 AB spec. |
Pinout & Package
Package: TO-220, 3-lead, molded plastic case (JEDEC variation AB). Mounting tab is electrically connected to collector terminal and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Left) | Base | Control input for forward-biased PNP operation; requires negative base current relative to emitter to turn on. |
| 2 (Center) | Collector | Main current sink terminal; electrically tied to metal mounting tab - must be isolated from chassis unless common-collector configuration is used. |
| 3 (Right) | Emitter | High-side reference node; typically connected to positive rail in PNP switching or amplifier circuits. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | -1.0 V at -8 A ensures <1.2 W conduction loss in switching mode - critical for efficiency in high-current linear regulators. |
| High hFE consistency | Min. 40 at -4 A supports predictable base drive sizing in Class AB audio output stages without excessive margin. |
| Fast switching speed | 40 MHz fT enables clean square-wave response in PWM-driven loads up to ~5 MHz edge rate. |
| Robust thermal rating | 150 °C max junction temperature and 2.1 °C/W RθJC allow reliable operation in enclosed industrial enclosures with passive heatsinking. |
Applications
| Audio Power Amplifier | Linear Voltage Regulator |
|---|---|
|
Use Scenario: Final output stage in discrete Class AB audio amplifiers delivering 20–50 W into 4–8 Ω speakers. IC Role / Device Role / Timing Role: PNP complementary power transistor paired with NPN counterpart (e.g., D44H11) in push-pull topology. Use Value: Low VCE(sat) reduces crossover distortion and improves thermal stability during dynamic music peaks. |
Use Scenario: Pass element in high-current series regulators powering analog sensor subsystems or FPGA core rails. IC Role / Device Role / Timing Role: High-current PNP pass transistor controlled by error amplifier feedback loop. Use Value: 60 W power rating and -10 A current capability support >5 A regulated outputs with minimal dropout voltage. |
| DC-DC Switching Converter | Motor Driver Pre-driver |
|
Use Scenario: High-side switch in non-synchronous buck or flyback converters operating below 100 kHz. IC Role / Device Role / Timing Role: PNP power switch driven by gate driver or microcontroller with level-shifting circuitry. Use Value: 40 MHz fT and fast turn-off ensure minimal switching loss and clean waveform edges at 50–80 kHz. |
Use Scenario: Pre-driver stage for high-current H-bridge MOSFET gates in brushed DC motor controllers (12–48 V). IC Role / Device Role / Timing Role: Current-amplifying interface between logic-level controller and power MOSFET gate capacitance. Use Value: High hFE (≥40) allows direct microcontroller GPIO drive with minimal external base resistor sizing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD45H11T4 | Surface-mount SOT-223 package; lower PD = 20 W; same VCEO, IC, and hFE specs but reduced thermal mass and higher RθJA. | Suitable only for low-duty-cycle or forced-air-cooled applications; not drop-in for TO-220 heatsinked designs. | Select when board space is constrained and peak power <15 W; verify thermal derating at target ambient. |
| BD711 | TO-126 package; VCEO = -100 V; IC = -12 A; hFE min. 25 at -8 A; higher VCE(sat) = -1.5 V; no fT specified. | Better voltage headroom but slower switching and higher conduction loss - preferred for high-voltage linear regulation over audio switching. | Choose for >80 V supply rails where speed is secondary; avoid in high-fidelity audio due to lower gain consistency. |
Compared with MJD45H11T4 and BD711, the D45H11 uniquely balances high power (60 W), fast switching (40 MHz), and low saturation (-1.0 V) in a through-hole TO-220 package - making it optimal for thermally demanding, medium-frequency PNP roles where layout flexibility and heatsink integration are priorities.
Availability
D45H11 is available at Aetrix Electronics and suitable for audio amplifier output stages, linear voltage regulators, and DC-DC switching converter high-side switches requiring stable component supply across prototyping, pilot production, and long-lifecycle industrial programs.
Supply support for D45H11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor (formerly Fairchild Semiconductor) is a global semiconductor manufacturer specializing in power management, analog, and discrete components for automotive, industrial, and consumer applications.
The D45H11 belongs to Fairchild's legacy general-purpose power transistor family, engineered for cost-effective, high-reliability PNP switching and amplification in industrial power supplies and audio systems.
FAQ
What is the maximum junction temperature for the D45H11?
The D45H11 has a specified operating junction temperature range of -55 °C to +150 °C. This rating is confirmed in the Absolute Maximum Ratings table of the official Fairchild D45H11 Rev. 1.2.0 datasheet. Exceeding +150 °C risks permanent degradation of the silicon die and bond wires. For reliable long-term operation, thermal design must ensure the D45H11 junction stays within this limit under worst-case load and ambient conditions.
Is the D45H11 pin-compatible with the D44H11?
Yes, the D45H11 and D44H11 share identical TO-220 package pinout (Base–Collector–Emitter) and mechanical footprint, but they are complementary devices: D44H11 is NPN while D45H11 is PNP. Their electrical parameters differ significantly - including polarity, VCEO, and hFE curves - so they are not functional substitutes but intended as matched pairs in push-pull amplifier designs. The D45H11 datasheet explicitly references this pairing context.
Does the D45H11 require a heatsink in normal operation?
Yes, the D45H11 requires a heatsink for any continuous operation above ~5 W dissipation. With RθJA = 62.5 °C/W and PD = 60 W, even at 25 °C ambient, junction temperature would exceed 150 °C without thermal management. The datasheet specifies mounting on an FR-4 PCB with a minimum 6 cm² copper collector pad - equivalent to a modest heatsink - to achieve the rated 60 W. For full 10 A current, a dedicated aluminum heatsink is mandatory.
What is the typical hFE of the D45H11 at low collector current?
The D45H11 exhibits hFE = 60 (minimum) at VCE = -1 V and IC = -2 A, and hFE = 40 (minimum) at IC = -4 A - both measured at 25 °C. While the datasheet does not specify hFE below -2 A, Figure 1 (Typical Pulsed Current Gain vs. Collector Current) shows hFE rising to ~120 at IC = -0.1 A. Therefore, at low currents (<100 mA), the D45H11 behaves as a high-gain small-signal PNP, though its primary design focus remains power-level operation.
Can the D45H11 be used in avalanche mode?
No, the D45H11 is not rated or characterized for avalanche operation. Its Absolute Maximum Ratings list VCEO = -80 V as a DC breakdown limit with IB = 0, and the datasheet contains no avalanche energy (EAS) specifications, ruggedness curves, or application guidance for repetitive or single-pulse avalanche use. Using the D45H11 beyond VCEO risks uncontrolled failure. For avalanche-tolerant designs, purpose-built ruggedized transistors such as the MJD127 should be selected instead.
D45H11 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 10 A
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 1V @ 400mA, 8A
- Current - Collector Cutoff (Max):
- 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 40 @ 4A, 1V
- Power - Max:
- 2 W
- Frequency - Transition:
- 40MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
D45H11 FAQ
1.How can I place an order for D45H11 through Aetrix?
Please submit a Request for Quotation (RFQ) for D45H11 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for D45H11 reliable?
The price and inventory of D45H11 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for D45H11 is usually 5 days.
3.What payment methods are accepted for D45H11?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for D45H11 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for D45H11?
D45H11 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your D45H11 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for D45H11?
For technical support, including D45H11 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your D45H11 requirements.
6.How does Aetrix verify that D45H11 is sourced from the original manufacturer or authorized distributors?
All D45H11 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that D45H11 meets industry standards.
7.What is the process for return or replacement of D45H11?
All D45H11 units undergo pre-shipment inspection (PSI). If there is an issue with D45H11, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The D45H11 part is unused and in its original packaging.
Return procedure for D45H11:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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