Diodes Incorporated DCP55-13

Overview

DCP55-13 from Diodes Incorporated is an NPN epitaxial planar silicon transistor in SOT-223 package, rated for 60 V V_CEO, 1 A continuous collector current, and 1 W power dissipation at T_A = 25°C, with h_FE = 40–250 at I_C = 150 mA, used in medium-power switching and linear amplification circuits.

For engineers reviewing the DCP55-13 datasheet, DCP55-13 pinout, DCP55-13 application, or DCP55-13 equivalent, key selection factors include its V_CE(SAT) ≤ 0.5 V at I_C = 500 mA/I_B = 50 mA, f_T = 200 MHz, RoHS-compliant matte tin plating, and SOT-223 thermal performance on FR-4 PCBs.

Technical Context

This NPN bipolar junction transistor employs epitaxial planar die construction for stable gain and low leakage, with complementary PNP type DCP52 available. Its 60 V V_CBO/V_CEO and 5 V V_EBO support operation in 24–48 V industrial control rails.

Designed for surface-mount automated assembly, it delivers DC current gain (h_FE) of 100–250 at I_C = 150 mA and 40–250 at I_C = 500 mA, with transition frequency f_T = 200 MHz under 50 mA/5 V conditions - suitable for audio-frequency switching and low-speed signal amplification.

Key Specifications

Pinout & Package

Package: SOT-223, 4-pin surface-mount plastic case with exposed collector tab (pin 1 and 3), UL 94V-0 rated, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power switching applications.

Compared with DCP55-13, BCP55 offers better thermal resistance for higher ambient operation, while BCP5516 adds h_FE binning - both retain pin compatibility and replace DCP55-13 without layout change.

Availability

DCP55-13 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter switching, and audio amplifier stages requiring stable component supply and long-term manufacturability.

Supply support for DCP55-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The DCP55 series belongs to Diodes' general-purpose bipolar transistor product line, engineered for cost-sensitive, medium-power switching and amplification in industrial and consumer equipment where reliability and RoHS compliance are mandatory.

FAQ

Is DCP55-13 still recommended for new designs?

No. Diodes Incorporated explicitly labels DCP55-13 as "Not Recommended for New Design" in DS30707 Rev. 7. The official alternative is BCP55 or BCP5516, which share identical voltage/current ratings and SOT-223 packaging but offer improved thermal resistance and tighter h_FE binning.

What is the correct pin configuration for DCP55-13 in SOT-223?

Per the top-view schematic in DS30707, pins are: 1 = Collector, 2 = Base, 3 = Collector (dual-tab connection), 4 = Emitter. Pins 1 and 3 are internally shorted to the exposed metal tab, which serves as the primary thermal path and must be electrically connected to the collector net.

Can DCP55-13 be used in linear amplification mode?

Yes. Its specified h_FE range (40–250), V_CE(SAT), and f_T = 200 MHz support Class-A or Class-AB linear operation at I_C ≤ 500 mA and V_CE ≤ 12 V. Thermal derating must be applied per R_θJA = 125 °C/W on FR-4 layouts.

What does the "-13" suffix indicate in DCP55-13?

The "-13" suffix denotes tape-and-reel packaging: 2500 units per reel. It does not indicate electrical binning or parameter variation. Electrical specifications match DCP55-16 except for h_FE grouping - DCP55-13 has h_FE = 40–250, while DCP55-16 is binned to 100–250 per datasheet page 2.