Diodes Incorporated DCP56-13
- Part No.:
- DCP56-13
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
DCP56-13.pdf
- Description:
- TRANS NPN 80V 1A SOT-223-3
- Quantity:
- Payment:

- Shipping:

Inventory:8,407
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Product details
Overview
DCP56-13 from Diodes Incorporated is an NPN epitaxial planar silicon transistor in SOT-223 package, rated for 80 V VCEO, 1 A IC, and 1 W power dissipation at TA = 25°C, with hFE = 25–250 (depending on IC) and fT = 200 MHz - used in medium-power switching and linear amplification circuits in industrial power supplies and motor drivers.
For engineers reviewing the DCP56-13 datasheet, DCP56-13 pinout, DCP56-13 application, or DCP56-13 equivalent, key selection criteria include VCEO/IC derating at elevated ambient temperature, thermal resistance RθJA = 125°C/W on FR-4 PCB, SOT-223 footprint compatibility, and DC current gain variation across operating current range.
Technical Context
This NPN bipolar junction transistor employs epitaxial planar die construction for stable gain and low leakage. Its complementary PNP counterpart is DCP53, enabling push-pull configurations. The device operates across –55°C to +150°C junction temperature range and supports automated SMT assembly due to SOT-223 leadframe geometry and matte tin plating.
Electrical behavior is characterized by three hFE bins (25–100, 40–160, 100–250) depending on collector current, with VCE(SAT) ≤ 0.5 V at IC = 500 mA / IB = 50 mA and VBE(ON) ≤ 1.0 V under same conditions - confirming suitability for saturated-switching applications requiring predictable turn-on voltage and low saturation loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 80 V - maximum allowable collector-emitter voltage before breakdown under open-base condition |
| IC | 1 A - continuous DC collector current rating at TA = 25°C, derated above 25°C per RθJA |
| PD | 1 W - total power dissipation limit on standard FR-4 PCB with Diodes-recommended pad layout |
| hFE | 25–250 - DC current gain varies with IC: 25–100 @ 5 mA, 40–160 @ 150 mA, 100–250 @ 500 mA |
| fT | 200 MHz - unity-gain frequency at IC = 50 mA, VCE = 5 V, indicating usable RF amplification up to ~100 MHz |
| RθJA | 125 °C/W - thermal resistance from junction to ambient air on specified FR-4 board, critical for thermal design margin |
| VCE(SAT) | ≤ 0.5 V - collector-emitter saturation voltage at IC = 500 mA / IB = 50 mA, defining conduction loss in switch mode |
Pinout & Package
Package: SOT-223 - surface-mount plastic package with exposed collector tab (Pin 1 & Pin 2 electrically connected), 4-terminal configuration optimized for thermal dissipation and automated placement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Collector) | Main current-carrying terminal (high-side switch node) | Electrically tied to Pin 2; serves as primary heat path to PCB copper pour |
| 2 (Collector) | Redundant collector connection | Provides mechanical stability and enhanced thermal conduction via dual-pad layout |
| 3 (Base) | Control input for minority-carrier injection | Drives transistor into active/saturation region; requires current-limiting resistor in series |
| 4 (Emitter) | Current return path and reference node | Connected to ground or low-side rail; establishes bias point for VBE control |
Key Features
| Feature | Design Value |
|---|---|
| Epitaxial planar die construction | Ensures consistent hFE distribution and low leakage (ICBO ≤ 0.1 μA @ 30 V) |
| SOT-223 package with exposed collector tab | Enables 1 W power handling on FR-4 PCB without heatsink, leveraging copper pour thermal spreading |
| Lead-free / RoHS-compliant plating | Matte tin annealed over copper leadframe meets J-STD-020C Level 1 moisture sensitivity and MIL-STD-202 solderability |
| Complementary PNP available (DCP53) | Supports discrete push-pull output stages without cross-manufacturer sourcing |
| Gain-bandwidth product of 200 MHz | Validates use in high-speed switching (e.g., PWM frequencies up to 50 MHz) and narrowband RF amplification |
Applications
| Industrial Power Supply Control | DC Motor Driver Stage |
|---|---|
Use Scenario: Switching regulator feedback loop driver and auxiliary bias supply transistor. IC Role / Device Role / Timing Role: Medium-current NPN switch controlling optocoupler LED or gate-drive transformer primary. Use Value: VCEO = 80 V withstands reflected flyback spikes; hFE ≥ 40 @ 150 mA ensures reliable drive with minimal base current overhead. | Use Scenario: Low-side switch in brushed DC motor H-bridge half-bridge section. IC Role / Device Role / Timing Role: Saturated-mode current switch delivering up to 1 A to motor winding. Use Value: VCE(SAT) ≤ 0.5 V minimizes conduction loss at 500 mA; SOT-223 thermal performance sustains duty-cycle operation. |
| LED Constant-Current Driver | Linear Audio Preamp Stage |
Use Scenario: Adjustable constant-current sink for high-brightness LED strings in signage and lighting. IC Role / Device Role / Timing Role: Emitter-follower configured transistor regulating LED current via sense-resistor feedback. Use Value: hFE ≥ 100 @ 500 mA enables precise current regulation with low base-drive error; fT = 200 MHz avoids instability in closed-loop bandwidth. | Use Scenario: Low-noise, medium-gain preamplifier stage in analog audio signal chain. IC Role / Device Role / Timing Role: Common-emitter amplifier biased in linear region for signal voltage gain. Use Value: Low VBE(ON) variation (<1.0 V) and tight hFE spread support stable DC bias; fT > 100 MHz preserves audio fidelity up to 20 kHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN medium-power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BCP56 | VCEO = 80 V, IC = 1 A, hFE = 40–250, same SOT-223 package, but higher typical fT (250 MHz) | Same functional role; slightly improved high-frequency response | Preferred for new designs requiring higher gain-bandwidth margin or tighter hFE consistency |
| BCP5616 | VCEO = 100 V, IC = 1 A, hFE = 100–250, identical SOT-223 footprint and pinout | Higher VCBO/VEBO ratings enable use in higher-voltage transient environments | Select when system-level surge immunity exceeds 80 V or when tighter hFE binning (100–250) is required |
Compared with DCP56-13, BCP56 offers higher fT for faster switching, while BCP5616 provides extended voltage headroom and narrower hFE spread - both maintain SOT-223 compatibility and eliminate redesign effort in legacy layouts.
Availability
DCP56-13 is available at Aetrix Electronics and suitable for industrial power supplies, DC motor control modules, LED driver circuits, and analog signal conditioning systems requiring stable component supply with long-term manufacturability assurance.
Supply support for DCP56-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DCP56 series belongs to Diodes' general-purpose bipolar transistor product line, engineered for cost-effective, thermally robust medium-power switching and amplification in industrial and consumer equipment where reliability and SMT compatibility are essential.
FAQ
Is DCP56-13 pin-compatible with BCP56 and BCP5616?
Yes - all three devices use identical SOT-223 package with Collector/Base/Emitter pin assignments (Pins 1&2 = C, Pin 3 = B, Pin 4 = E). Mechanical and electrical pinout alignment allows direct PCB footprint reuse without layout modification.
What is the maximum safe operating current at 85°C ambient?
At TA = 85°C, derating begins at 1 W / 125°C/W = 8 mW/°C above 25°C. With 60°C rise, power drops to 0.52 W. Using VCE(SAT) ≈ 0.45 V, max IC ≈ 1.15 A - but practical limit is 700 mA to maintain <125°C junction temperature with safety margin.
Does DCP56-13 support pulsed operation beyond 1 A?
Yes - per datasheet Note 4, pulse testing allows IC > 1 A with pulse width ≤ 300 μs and duty cycle ≤ 2%. This supports short-duration peak loads such as inrush limiting or solenoid actuation, provided average power remains within 1 W thermal limit.
Why is DCP56-13 marked "Not Recommended for New Design"?
Diodes Incorporated issued this designation because newer alternatives (BCP56/BCP5616) offer improved fT, tighter hFE bins, and updated qualification - not due to obsolescence or failure risk. DCP56-13 remains fully functional and supported for existing production and repair.
DCP56-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 1 A
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 40 @ 150mA, 2V
- Power - Max:
- 1 W
- Frequency - Transition:
- 200MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223-3
DCP56-13 FAQ
1.How can I place an order for DCP56-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DCP56-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DCP56-13 reliable?
The price and inventory of DCP56-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DCP56-13 is usually 5 days.
3.What payment methods are accepted for DCP56-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DCP56-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DCP56-13?
DCP56-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DCP56-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DCP56-13?
For technical support, including DCP56-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DCP56-13 requirements.
6.How does Aetrix verify that DCP56-13 is sourced from the original manufacturer or authorized distributors?
All DCP56-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DCP56-13 meets industry standards.
7.What is the process for return or replacement of DCP56-13?
All DCP56-13 units undergo pre-shipment inspection (PSI). If there is an issue with DCP56-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DCP56-13 part is unused and in its original packaging.
Return procedure for DCP56-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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