Diodes Incorporated DCX55-16-13

Overview

DCX55-16-13 from Diodes Incorporated is an NPN epitaxial planar silicon transistor in SOT89-3L package, rated for 60 V V_CEO, 1 A continuous collector current, and 1 W power dissipation at 25°C ambient - designed for medium-power switching and linear amplification in industrial power supplies and motor control stages.

For engineers reviewing the DCX55-16-13 datasheet, DCX55-16-13 pinout, DCX55-16-13 application, or DCX55-16-13 equivalent, key selection criteria include its 100–250 h_FE range at 150 mA, 0.5 V V_CE(SAT) at 500 mA/50 mA drive, and RoHS-compliant matte tin-plated terminals suitable for automated SMT assembly.

Technical Context

This discrete NPN bipolar junction transistor operates with a maximum junction temperature of +150°C and features low thermal resistance (R_θJA = 125°C/W) when mounted on FR-4 PCB per AP02001 layout. Its f_T of 200 MHz supports high-speed switching up to ~100 kHz in PWM-driven loads.

The device exhibits symmetrical breakdown ratings: V_CBO = V_CEO = 60 V and V_EBO = 5 V, with guaranteed I_CBO ≤ 100 nA at 30 V and 25°C - enabling stable operation in bias-sensitive amplifier stages and relay drivers where leakage must be minimized.

Key Specifications

Pinout & Package

Package: SOT89-3L - surface-mount plastic case with exposed collector tab for thermal relief; UL 94V-0 rated, moisture sensitivity level 1, weight ≈ 0.072 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power switching applications.

Compared with ZTX653 and MJD122G, DCX55-16-13 delivers optimized balance of low saturation voltage, tight h_FE tolerance, and SOT89-3L footprint - making it preferable for thermally constrained, medium-duty switching where precision drive and RoHS compliance are mandatory.

Availability

DCX55-16-13 is available at Aetrix Electronics and suitable for industrial power supplies, DC motor drivers, LED constant-current modules, and linear audio pre-amplifiers requiring stable component supply and full traceability.

Supply support for DCX55-16-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for industrial, computing, and consumer markets.

The DCX55 series belongs to Diodes' general-purpose bipolar transistor product line, engineered for cost-effective, high-yield SMT deployment in medium-power analog and switching circuits.

FAQ

What is the maximum allowable junction temperature for DCX55-16-13?

The absolute maximum junction temperature is +150°C, as specified in the Thermal Characteristics table. Operation beyond this limit risks permanent degradation of h_FE and increased leakage. Derating begins at 25°C ambient per the R_θJA = 125°C/W curve in Figure 1.

Is DCX55-16-13 pin-compatible with DCX55-13?

Yes - both share identical SOT89-3L pinout (Collector-Base-Emitter on pins 1-2-3), same die and electrical specs, differing only in tape-and-reel packaging quantity (2500 vs. 2500) and date-code marking format per ordering note 5.

Does DCX55-16-13 require a heatsink in standard FR-4 PCB layout?

No external heatsink is required below 0.5 W dissipation at 25°C ambient. At full 1 W, the device reaches ~150°C junction temperature using Diodes' recommended AP02001 pad layout - sufficient for intermittent duty but not continuous 1 A conduction without airflow or copper pour enhancement.

Can DCX55-16-13 replace a BC337 in existing designs?

Only with circuit review: BC337 is TO-92, 0.5 A I_C, 45 V V_CEO; DCX55-16-13 offers higher voltage, current, and power but requires SOT89-3L footprint and different thermal management. Base drive may need adjustment due to higher h_FE lower end (100 vs. 100–630).