Diodes Incorporated DCX56-13

Overview

DCX56-13 from Diodes Incorporated is an NPN epitaxial planar silicon transistor in SOT89-3L package, rated for 80 V V_CEO, 1 A continuous collector current, and 1 W power dissipation at 25°C ambient. It delivers h_FE = 100–250 at I_C = 150 mA, V_CE = 2.0 V, and exhibits V_CE(SAT) ≤ 0.5 V at I_C = 500 mA / I_B = 50 mA - optimized for medium-power switching in DC-DC converters and motor driver stages.

For engineers reviewing the DCX56-13 datasheet, DCX56-13 pinout, DCX56-13 application, or DCX56-13 equivalent, key selection criteria include verified V_CEO/I_C derating behavior, SOT89-3L thermal resistance (R_θJA = 125°C/W), h_FE binning consistency (–16 suffix), and RoHS-compliant matte tin plating validated per MIL-STD-202.

Technical Context

This discrete NPN transistor uses epitaxial planar die construction to ensure stable gain and breakdown characteristics across temperature. Its SOT89-3L leadframe supports automated placement and provides defined thermal path to PCB copper, with JEDEC-standard moisture sensitivity level 1 and UL 94V-0 flammability rating.

The device operates across –55°C to +150°C junction temperature range and is characterized under pulsed test conditions (300 μs pulse width, ≤2% duty cycle) for all ON/OFF parameters. f_T = 200 MHz at I_C = 50 mA, V_CE = 5 V enables use in low-frequency RF amplification and fast-switching control loops.

Key Specifications

Pinout & Package

Package: SOT89-3L - surface-mount plastic package with exposed collector tab for thermal and electrical connection; dimensions per JEDEC MO-229, 4.5 × 2.5 × 1.05 mm (L × W × H); UL 94V-0 rated molding compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power switching applications.

Compared with ZTX653 and MJD122G, DCX56-13 offers balanced 80 V/1 A rating, tighter h_FE binning, and SOT89-3L thermal performance ideal for space-constrained 24–48 V industrial switching where gain consistency and RoHS compliance are prioritized.

Availability

DCX56-13 is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and linear regulators requiring stable component supply, consistent h_FE binning, and RoHS-compliant SMT assembly.

Supply support for DCX56-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the Philippines.

The DCX56 series belongs to Diodes' general-purpose bipolar transistor product line, engineered specifically for cost-sensitive, medium-power switching and amplification in industrial, consumer, and computing power supplies.

FAQ

What is the difference between DCX56-13 and DCX56-16?

The "-13" suffix denotes tape-and-reel packaging (2500 units per reel), while "-16" indicates h_FE binning: DCX56-16 guarantees h_FE = 100–250 at I_C = 150 mA, V_CE = 2.0 V. The -13 part may be un-binned or carry alternate h_FE ranges unless specified. Both share identical electrical ratings and SOT89-3L package.

Can DCX56-13 replace a TO-92 transistor like PN2222A?

No - DCX56-13 is not a drop-in replacement for PN2222A due to different package (SOT89-3L vs. TO-92), pinout (Emitter-Base-Collector vs. Emitter-Collector-Base), and thermal profile. While both are NPN transistors, the SOT89-3L's exposed collector tab requires dedicated PCB copper area and cannot be substituted without layout revision.

Is DCX56-13 suitable for linear amplifier applications?

Yes - its f_T = 200 MHz, h_FE stability, and low V_CE(SAT) support Class-A and Class-AB audio preamplifier stages up to ~20 MHz. However, it lacks guaranteed noise figure or distortion specs; for high-fidelity designs, purpose-built low-noise transistors are recommended.

What is the maximum allowable PCB copper area for thermal performance?

Per Diodes' AP02001 layout guide, optimal thermal performance requires ≥2.5 cm² of 2-oz copper connected to the exposed collector tab (Pin 3). Smaller areas increase R_θJA; with 1 cm², R_θJA rises to ~180°C/W, limiting usable power dissipation to ~0.55 W at T_A = 25°C.