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Diodes Incorporated DDTA113TE-7-F

Part No.:
DDTA113TE-7-F
Manufacturer:
Diodes Incorporated
Category:
Single, Pre-Biased Bipolar Transistors
Package:
SOT-523
Datasheet:
AetrixDDTA113TE-7-F.pdf
Description:
TRANS PREBIAS PNP 50V SOT523
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,333

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Product details

Overview

DDTA113TE-7-F from Diodes Incorporated is a PNP pre-biased transistor in SOT523 package with built-in 1 kΩ base resistor (R1 only), −50 V VCEO, −100 mA ICM, 150 mW power dissipation, and DC current gain hFE of 100–600 at −1 mA/−5 V; used for compact logic-level switching in space-constrained consumer and industrial control circuits.

For engineers reviewing the DDTA113TE-7-F datasheet, DDTA113TE-7-F pinout, DDTA113TE-7-F application, or DDTA113TE-7-F equivalent, this page delivers verified electrical parameters, validated SOT523 terminal mapping, real-world use scenarios, and functionally comparable alternatives with documented differences in biasing and gain behavior.

Technical Context

This device integrates a single PNP bipolar junction transistor with an on-die 1 kΩ base-emitter pull-up resistor (R1), eliminating external bias components. It operates as a digital switch with guaranteed saturation at IC/IB = −10 mA/−1 mA and VCE(sat) ≤ −0.3 V.

Designed for low-power, high-density applications, it supports ambient temperatures from −55 °C to +150 °C and exhibits fT = 250 MHz at −10 V VCE, enabling stable performance in signal routing and level translation up to mid-frequency ranges.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −50 V: Maximum collector-emitter voltage before breakdown; enables use in 24 V rail switching with safety margin.
ICM −100 mA peak pulse: Supports transient load driving such as LED indicators or small relays without thermal runaway.
PD 150 mW: Power limit on FR4 PCB with 15 mm × 15 mm copper pad; defines maximum continuous current under still-air conditions.
hFE 100–600 at −1 mA/−5 V: Wide DC gain range ensures reliable turn-on across process variation in digital interface circuits.
R1 1 kΩ (nominal): Integrated base resistor sets fixed bias ratio; eliminates need for external resistor in simple inverter or switch designs.
VCE(sat) ≤ −0.3 V at IC/IB = −10 mA/−1 mA: Ensures low conduction loss and clean logic-low output in active-low configurations.

Pinout & Package

Package: SOT523 - ultra-small surface-mount plastic package (1.60 mm × 1.60 mm × 0.75 mm), moisture sensitivity level 1, matte tin-plated leads, weight ≈ 0.002 g.

Pin/Terminal Circuit Role Design Meaning
1 (Emitter) E Current sink node; connected to ground or low-side reference in common-emitter switch configuration.
2 (Base) B Control input tied internally to R1; accepts TTL/CMOS-compatible logic-high to activate transistor.
3 (Collector) C Output node; pulled high via external load; delivers inverted logic signal when saturated.

Key Features

Feature Design Value
Integrated R1 bias resistor 1 kΩ nominal value reduces BOM count and layout area for single-resistor digital switches.
SOT523 footprint 1.6 mm × 1.6 mm outline enables placement in dense portable electronics where board space is constrained.
AEC-Q101 readiness Manufactured in IATF 16949-certified facilities; supports automotive-grade change control upon request.
Green compound Halogen- and antimony-free molding compound (<900 ppm Br, <900 ppm Cl, <1000 ppm Sb) meets RoHS 3 and JEDEC green standards.

Applications

LED Indicator Driver Microcontroller GPIO Expander

Use Scenario: Driving discrete status LEDs from 3.3 V or 5 V MCU outputs with minimal external parts.

IC Role / Device Role / Timing Role: Active-low switch that sinks current from LED anode to ground when input is high.

Use Value: Eliminates need for discrete base resistor; ensures consistent LED brightness across supply voltage variations due to fixed R1 biasing.

Use Scenario: Adding extra low-side drive capability to resource-limited microcontrollers with limited GPIO current rating.

IC Role / Device Role / Timing Role: Digital buffer/inverter extending MCU output drive strength beyond 20 mA per pin.

Use Value: Enables direct connection of higher-current loads (e.g., small solenoids, buzzers) without external driver ICs or discrete transistors + resistors.

Level Translation Interface Power Sequencing Control

Use Scenario: Converting 1.8 V logic signals to drive 5 V peripherals requiring active-low enable inputs.

IC Role / Device Role / Timing Role: Inverting level shifter operating between mismatched voltage domains using resistor-limited base drive.

Use Value: Achieves clean logic inversion with sub-100 ns propagation delay and no additional power supply required beyond VCC and GND.

Use Scenario: Enabling/disabling downstream power rails (e.g., LDOs or DC-DC converters) in multi-stage power-up sequences.

IC Role / Device Role / Timing Role: Low-leakage enable switch controlling EN pin of voltage regulators with precise timing margins.

Use Value: Guarantees <0.5 μA cutoff leakage (IEBO) to prevent unintended regulator activation during standby or reset states.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP pre-biased transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
DDTA113Z-7 Same die, but in SOT-323 package (2.1 mm × 1.25 mm); R1 = 1 kΩ; identical electrical specs. Larger footprint; better thermal dissipation (RθJA = 625 °C/W vs. 833 °C/W), less suitable for ultra-dense layouts. Select when board layout allows larger package and higher reliability margin under sustained load is needed.
NSV11300MT1G PNP pre-biased transistor with R1 = 1 kΩ, but hFE min = 30 (vs. 100); VCEO = −50 V; SOT-523 compatible. Lower guaranteed gain requires higher input drive current to ensure saturation; less robust against temperature drift. Choose only if cost sensitivity outweighs design margin requirements and full hFE validation is performed.

Compared with DDTA113Z-7, DDTA113TE-7-F offers superior space efficiency at the cost of thermal headroom; versus NSV11300MT1G, it provides significantly higher minimum hFE, ensuring reliable saturation with standard logic-level inputs across temperature.

Availability

DDTA113TE-7-F is available at Aetrix Electronics and suitable for LED indicator drivers, microcontroller GPIO expansion, and level translation interfaces requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for DDTA113TE-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, serving industrial, computing, communications, and consumer markets with high-reliability components.

This part belongs to the DDTA R1-only pre-biased transistor family, engineered to simplify digital switching designs by integrating critical biasing into the die-targeting space- and cost-sensitive applications in portable electronics and automotive subsystems.

FAQ

Is DDTA113TE-7-F pin-compatible with standard SOT-23 transistors?

No. DDTA113TE-7-F uses the SOT523 package (1.6 mm × 1.6 mm), which has different pin spacing and outline than SOT-23 (2.9 mm × 1.3 mm). Its pin 1 is Emitter, pin 2 is Base, pin 3 is Collector-matching SOT523 mechanical standard, not SOT-23. PCB layout must follow Diodes' SOT523 pad dimensions.

What is the maximum continuous collector current at 85°C ambient?

Derating begins at 25°C: 150 mW max power → 833 °C/W thermal resistance → ~125 mW allowable at 85°C. At VCE(sat) ≈ −0.3 V, this supports ~417 mA theoretical, but IC is limited to −100 mA peak per Absolute Maximum Ratings. Continuous IC should be ≤ −50 mA at 85°C to maintain reliability and avoid exceeding safe operating area.

Can DDTA113TE-7-F replace a standard PNP BJT like BC807 in existing designs?

Only with schematic and layout revision. DDTA113TE-7-F includes an internal 1 kΩ R1 resistor connecting base to emitter, whereas BC807 has no built-in resistors. Direct substitution would short the base node unless external biasing is removed and drive logic is reconfigured for active-high input control.

Does DDTA113TE-7-F meet AEC-Q101 for automotive use?

DDTA113TE-7-F is manufactured in IATF 16949-certified facilities and supports PPAP documentation, but formal AEC-Q101 qualification requires specific test reports and change control. Customers needing automotive qualification must contact Diodes directly to confirm status for this exact part number and lot traceability requirements.

DDTA113TE-7-F Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-523
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
1 kOhms
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 1mA, 10mA
Current - Collector Cutoff (Max):
500nA (ICBO)
Frequency - Transition:
250 MHz
Power - Max:
150 mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-523

DDTA113TE-7-F FAQ

1.How can I place an order for DDTA113TE-7-F through Aetrix?

Please submit a Request for Quotation (RFQ) for DDTA113TE-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DDTA113TE-7-F reliable?

The price and inventory of DDTA113TE-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DDTA113TE-7-F is usually 5 days.

3.What payment methods are accepted for DDTA113TE-7-F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DDTA113TE-7-F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DDTA113TE-7-F?

DDTA113TE-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DDTA113TE-7-F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DDTA113TE-7-F?

For technical support, including DDTA113TE-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DDTA113TE-7-F requirements.

6.How does Aetrix verify that DDTA113TE-7-F is sourced from the original manufacturer or authorized distributors?

All DDTA113TE-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DDTA113TE-7-F meets industry standards.

7.What is the process for return or replacement of DDTA113TE-7-F?

All DDTA113TE-7-F units undergo pre-shipment inspection (PSI). If there is an issue with DDTA113TE-7-F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DDTA113TE-7-F part is unused and in its original packaging.

Return procedure for DDTA113TE-7-F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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