Diodes Incorporated DDTA113TUA-7-F

Overview

DDTA113TUA-7-F from Diodes Incorporated is a PNP pre-biased transistor in SOT323 package with built-in 1 kΩ base resistor (R1 only), −50 V V_CEO, −100 mA I_C, 200 mW power dissipation, and h_FE of 100–600 at I_C = −1 mA. It enables simplified digital switching in low-voltage logic interface circuits.

For engineers reviewing the DDTA113TUA-7-F datasheet, DDTA113TUA-7-F pinout, DDTA113TUA-7-F application, or DDTA113TUA-7-F equivalent, key selection criteria include verified R1-only biasing topology, guaranteed V_CE(sat) ≤ −0.3 V at I_C/I_B = −10 mA/−1 mA, SOT323 thermal resistance of 625 °C/W, and AEC-Q101 readiness for automotive signal conditioning.

Technical Context

This device implements a monolithic PNP bipolar junction transistor with a single integrated 1 kΩ base-emitter pull-up resistor (R1), eliminating external bias components. It operates as a saturated switch with guaranteed V_CE(sat) ≤ −0.3 V under defined drive conditions and supports DC current gain (h_FE) from 100 to 600 across its rated collector current range.

The SOT323 package provides surface-mount compatibility with J-STD-020 Level 1 moisture sensitivity and 0.006 g mass. Its epitaxial planar die construction ensures stable parametric performance across −55 °C to +150 °C operating temperature, with thermal resistance R_θJA = 625 °C/W on FR4 PCB using minimum recommended pad layout.

Key Specifications

Pinout & Package

Package: SOT323 - ultra-small surface-mount plastic package (2.15 mm × 2.10 mm × 0.95 mm), matte tin-plated leads, UL 94V-0 rated molding compound, 0.006 g weight.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP pre-biased transistor applications.

Compared with DDTA123TUA-7-F, this part delivers faster turn-on due to lower R1, while versus DDTC113TUA-7-F it provides inverted logic compatibility-critical for fail-safe shutdown paths where low-state activation is mandated.

Availability

DDTA113TUA-7-F is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO interfacing, and automotive door module designs requiring stable component supply and long-term manufacturability.

Supply support for DDTA113TUA-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets.

This part belongs to the DDTA R1-Only Series pre-biased transistor family, designed specifically to simplify digital switching in space- and cost-constrained applications by integrating a single base bias resistor without compromising thermal or electrical performance.

FAQ

What is the function of the internal resistor in DDTA113TUA-7-F?

The internal 1 kΩ resistor (R1) connects the base to the emitter, forming a built-in pull-up network that allows direct connection to logic outputs without external bias components. This resistor sets the base current when the input is pulled low, enabling predictable saturation and eliminating design iterations for base drive sizing.

Can DDTA113TUA-7-F be used in automotive applications?

Yes-DDTA113TUA-7-F is AEC-Q101 qualified and manufactured in IATF 16949 certified facilities. It supports PPAP documentation and is specified for operation from −55 °C to +150 °C, making it suitable for body electronics, lighting controls, and sensor interfaces in passenger vehicles and commercial fleets.

How does the SOT323 package affect thermal performance?

The SOT323 package has a thermal resistance of 625 °C/W (junction-to-ambient) on standard FR4 PCB with minimum recommended pad layout. This limits continuous power dissipation to 200 mW at +25 °C ambient, requiring derating above 25 °C per the published derating curve-critical for sustained switching in enclosed enclosures.

Is there a complementary NPN version of this transistor?

Yes-DDTC113TUA-7-F is the direct NPN complement, sharing identical R1 = 1 kΩ, V_CEO = 50 V, I_C = 100 mA, and SOT323 packaging. It provides active-high switching behavior and is pin-compatible, enabling symmetrical design of push-pull drivers or dual-rail signal conditioning stages.