Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DDTA113ZKA-7-F

Part No.:
DDTA113ZKA-7-F
Manufacturer:
Diodes Incorporated
Category:
Single, Pre-Biased Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixDDTA113ZKA-7-F.pdf
Description:
TRANS PREBIAS PNP 50V SC59-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,467

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DDTA113ZKA-7-F from Diodes Incorporated is a PNP pre-biased small-signal transistor in SC-59 package with integrated bias resistors R1 = 1 kΩ and R2 = 10 kΩ (R1 ≠ R2), VCEO = −50 V, IC(max) = −100 mA, and DC current gain (hFE) ≥ 33 at −10 mA/−5 V. It functions as a digital switch or level translator in low-power logic interface circuits.

For engineers reviewing the DDTA113ZKA-7-F datasheet, DDTA113ZKA-7-F pinout, DDTA113ZKA-7-F application, or DDTA113ZKA-7-F equivalent, key selection criteria include input voltage thresholds (VIN(on) = −3.0 V @ −20 mA), output saturation voltage (VCE(sat) ≤ −0.3 V), resistor tolerance (±30% on R1), and thermal resistance (625 °C/W).

Technical Context

This device integrates two discrete bias resistors (R1 ≠ R2) directly into a PNP epitaxial planar transistor die to enable single-pin digital input control without external components. Its internal resistor network sets base current for predictable switching behavior under defined VIN conditions.

The SC-59 surface-mount package supports automated assembly and provides thermal performance suitable for ambient temperatures from −55 °C to +150 °C. Input voltage range spans +5 V to −10 V, and output current capability is rated up to −100 mA with guaranteed gain down to −10 mA collector current.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−50 V - Maximum allowable collector-emitter voltage before breakdown; defines safe operating voltage headroom in negative-rail switching.
IC(max)−100 mA - Continuous collector current limit; determines maximum load drive capability in saturated switch mode.
R1 / R21 kΩ / 10 kΩ - Asymmetric internal bias network enabling precise base current control and improved noise immunity vs. symmetric designs.
VIN(on)−3.0 V @ −20 mA - Verified turn-on threshold; ensures reliable activation from standard TTL or CMOS logic outputs.
VCE(sat)≤ −0.3 V @ −10 mA - Low saturation voltage minimizes power loss and heat generation in high-duty-cycle switching.
hFE≥ 33 @ −10 mA/−5 V - Guaranteed DC current gain ensures stable switching margin across temperature and process variation.
PD200 mW - Maximum power dissipation at 25 °C ambient; derates linearly above 25 °C per 625 °C/W thermal resistance.

Pinout & Package

Package: SC-59 - Surface-mount plastic package with three terminals (Emitter, Base, Collector), UL 94V-0 flammability rating, moisture sensitivity level 1, and lead-free matte tin plating over copper leadframe.

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter)Emitter terminal of PNP transistorConnected to most positive rail in typical switch configuration; current flows out of this pin during conduction.
2 (Collector)Collector terminal of PNP transistorOutput node tied to load; sinks current when transistor is active; referenced to system ground or negative supply.
3 (Base)Input-controlled base node with internal R1–R2 dividerAccepts digital input signal; internal resistors bias base to enable clean on/off transitions without external components.

Key Features

FeatureDesign Value
Pre-biased PNP topologyEliminates need for external base resistors, reducing BOM count and PCB area in digital interface circuits.
R1 ≠ R2 resistor architectureProvides optimized base current ratio for faster turn-off and reduced storage time compared to symmetric bias networks.
SC-59 packageEnables high-density placement and reflow compatibility while maintaining thermal performance up to 150 °C junction temperature.
Lead-free/RoHS-compliant constructionMeets global environmental regulations and supports Pb-free manufacturing processes without compromising reliability.

Applications

Industrial Sensor InterfaceAutomotive Body Control Module

Use Scenario: Level-shifting digital signals from 3.3 V microcontrollers to −12 V actuator drivers in factory automation systems.

IC Role / Device Role / Timing Role: PNP pre-biased switch translating logic-high to low-side sink output with controlled rise/fall timing.

Use Value: Reduces component count by replacing discrete transistor + two resistors, improving board-level reliability and assembly yield.

Use Scenario: Driving LED indicators and relay coils in vehicle door modules where supply rails include −12 V battery backup paths.

IC Role / Device Role / Timing Role: High-side switch controlling current flow from battery to load using emitter-follower configuration.

Use Value: Ensures consistent turn-on behavior across wide temperature range (−40 °C to +125 °C) due to built-in resistor matching and gain stability.

Consumer Appliance Control BoardMedical Diagnostic Equipment I/O

Use Scenario: Isolating microcontroller GPIO pins from higher-current solenoid drivers in washing machine control units.

IC Role / Device Role / Timing Role: Digital output buffer providing current gain and voltage translation between logic and power domains.

Use Value: Prevents GPIO damage via internal current limiting and guarantees VCE(sat) ≤ −0.3 V even at full −100 mA load.

Use Scenario: Enabling/disabling analog sensor biasing circuits in portable ultrasound devices requiring low-noise, low-leakage switching.

IC Role / Device Role / Timing Role: Precision switch with <0.5 μA leakage (IO(off)) ensuring minimal signal path disturbance during standby.

Use Value: Maintains signal integrity in sensitive analog front-ends by eliminating external resistor parasitics and leakage paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP pre-biased transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DDTA123YKA-7-FR1 = 2.2 kΩ, R2 = 10 kΩ; VIN(on) = −3.0 V @ −20 mA; same package and max ratingsHigher input impedance enables lower drive current requirement but slightly slower turn-onSelect when driving from high-impedance sources or where reduced base current consumption is critical
DDTC113ZKA-7-FNPN complement; identical R1/R2 values and package; VCEO = +50 V, IC(max) = +100 mAUsed in low-side switching configurations instead of high-side; requires inverted logic polaritySelect for NPN-based designs needing matched bias network and footprint compatibility

Compared with DDTA123YKA-7-F and DDTC113ZKA-7-F, DDTA113ZKA-7-F offers the lowest input resistance (1 kΩ R1), enabling fastest turn-on response and highest noise immunity in noisy industrial environments.

Availability

DDTA113ZKA-7-F is available at Aetrix Electronics and suitable for industrial sensor interface, automotive body control module, and consumer appliance control board applications requiring stable component supply and long-term production continuity.

Supply support for DDTA113ZKA-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This part belongs to the DDTA(R1≠R2) series of pre-biased transistors designed specifically for simplified digital switching in space-constrained, cost-sensitive applications where external bias components must be eliminated.

FAQ

What is the absolute maximum input voltage for DDTA113ZKA-7-F?

The absolute maximum input voltage is +5 V to −10 V, as specified in the "Input Voltage" section of the datasheet. Exceeding −10 V may cause irreversible damage to the internal R1 resistor or base-emitter junction. This rating assumes operation at 25 °C ambient; derating applies at elevated temperatures per the thermal curve in Figure 1.

Can DDTA113ZKA-7-F replace a standard PNP transistor with external bias resistors?

Yes - it replaces a discrete PNP transistor plus two external bias resistors (R1 = 1 kΩ, R2 = 10 kΩ) in digital switching applications. The internal resistors are laser-trimmed to ±30% tolerance and thermally coupled, offering better stability than discrete solutions. No layout change is needed if using SC-59 footprint.

Is DDTA113ZKA-7-F suitable for linear amplification?

No - it is optimized for saturated switching, not linear operation. The datasheet specifies only switching parameters (VIN(on), VCE(sat), IO(off)) and DC gain under switched conditions. Gain-bandwidth product (250 MHz) is provided for reference only and does not guarantee linear performance or stability in amplifier configurations.

What is the moisture sensitivity level (MSL) and reflow profile compliance for this part?

DDTA113ZKA-7-F has MSL Level 1 per J-STD-020C, meaning it can be stored indefinitely at ≤30 °C/60% RH without baking prior to reflow. It is compatible with standard Pb-free reflow profiles (peak 260 °C), and its "Green" molding compound meets UL 94V-0 flammability requirements.

DDTA113ZKA-7-F Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
1 kOhms
Resistor - Emitter Base (R2):
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
33 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
250 MHz
Power - Max:
200 mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SC-59-3

DDTA113ZKA-7-F FAQ

1.How can I place an order for DDTA113ZKA-7-F through Aetrix?

Please submit a Request for Quotation (RFQ) for DDTA113ZKA-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DDTA113ZKA-7-F reliable?

The price and inventory of DDTA113ZKA-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DDTA113ZKA-7-F is usually 5 days.

3.What payment methods are accepted for DDTA113ZKA-7-F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DDTA113ZKA-7-F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DDTA113ZKA-7-F?

DDTA113ZKA-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DDTA113ZKA-7-F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DDTA113ZKA-7-F?

For technical support, including DDTA113ZKA-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DDTA113ZKA-7-F requirements.

6.How does Aetrix verify that DDTA113ZKA-7-F is sourced from the original manufacturer or authorized distributors?

All DDTA113ZKA-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DDTA113ZKA-7-F meets industry standards.

7.What is the process for return or replacement of DDTA113ZKA-7-F?

All DDTA113ZKA-7-F units undergo pre-shipment inspection (PSI). If there is an issue with DDTA113ZKA-7-F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DDTA113ZKA-7-F part is unused and in its original packaging.

Return procedure for DDTA113ZKA-7-F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DDTA113ZKA-7-F Tags

  • DDTA113ZKA-7-F
  • DDTA113ZKA-7-F PDF
  • DDTA113ZKA-7-F Datasheet
  • DDTA113ZKA-7-F Specifications
  • DDTA113ZKA-7-F Images
  • Diodes Incorporated
  • Diodes Incorporated DDTA113ZKA-7-F
  • Buy DDTA113ZKA-7-F
  • DDTA113ZKA-7-F Price
  • DDTA113ZKA-7-F Distributor
  • DDTA113ZKA-7-F Supplier
  • DDTA113ZKA-7-F Wholesale
Related Products
MUN5211T1G
MUN5211T1G

onsemi

DTC043ZEBTL
DTC043ZEBTL

Rohm Semiconductor

DTC114EKAT146
DTC114EKAT146

Rohm Semiconductor

DDTD113ZC-7-F
DDTD113ZC-7-F

Diodes Incorporated

DRDNB16W-7
DRDNB16W-7

Diodes Incorporated

PDTC114ET,215
PDTC114ET,215

Nexperia USA Inc.

PDTC143ZT,215
PDTC143ZT,215

Nexperia USA Inc.

PDTC143ET,215
PDTC143ET,215

Nexperia USA Inc.

PDTC143XT,215
PDTC143XT,215

Nexperia USA Inc.

MMUN2211LT1G
MMUN2211LT1G

onsemi

PDTC144ET,215
PDTC144ET,215

Nexperia USA Inc.

PDTC124ET,215
PDTC124ET,215

Nexperia USA Inc.

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER