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Diodes Incorporated DDTA114TE-7-F

Part No.:
DDTA114TE-7-F
Manufacturer:
Diodes Incorporated
Category:
Single, Pre-Biased Bipolar Transistors
Package:
SOT-523
Datasheet:
AetrixDDTA114TE-7-F.pdf
Description:
TRANS PREBIAS PNP 50V SOT523
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,002

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Product details

Overview

DDTA114TE-7-F from Diodes Incorporated is a PNP pre-biased transistor in SOT523 package with built-in 10 kΩ base resistor (R1 only), VCEO = −50 V, IC = −100 mA peak, VCE(sat) ≤ −0.3 V at IC/IB = −5 mA/−0.5 mA, and hFE = 100–600. It serves as a compact, lead-free switching element in space-constrained logic interface and load control circuits.

For engineers reviewing the DDTA114TE-7-F datasheet, DDTA114TE-7-F pinout, DDTA114TE-7-F application, or DDTA114TE-7-F equivalent, key selection criteria include verified R1-only biasing topology, guaranteed saturation voltage under defined drive conditions, thermal derating behavior on FR4 PCB, and compatibility with 0.002 g SOT523 assembly processes.

Technical Context

This device implements a single-resistor (R1) pre-biased PNP configuration-no external base resistor required-enabling direct TTL/CMOS-level input drive without current-limiting components. Its epitaxial planar die construction ensures stable gain and low leakage across −55°C to +150°C.

The SOT523 package supports high-density mounting with 833°C/W junction-to-ambient thermal resistance under standardized 15 mm × 15 mm × 0.6 mm FR4 layout. Electrical operation is specified under pulsed test conditions (≤300 µs pulse width, ≤2% duty cycle) for BVCEO, hFE, and fT = 250 MHz.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−50 V - Maximum allowable collector-emitter voltage before breakdown; defines safe operating range in high-side switch applications.
IC (peak)−100 mA - Peak pulsed collector current capacity; supports transient load switching without secondary protection.
VCE(sat)≤ −0.3 V at IC/IB = −5 mA/−0.5 mA - Confirmed low-saturation drop enables <0.15 mW power loss at rated drive.
hFE100–600 at IC = −1 mA, VCE = −5 V - Wide DC current gain range allows robust switching margin across process variation.
R110 kΩ (nominal) - Integrated base pull-up resistor eliminates discrete component count and layout area in digital interface stages.
PD150 mW - Absolute maximum steady-state power dissipation on standard FR4; requires thermal derating above +25°C ambient.
fT250 MHz - Transition frequency confirms suitability for signal switching up to ~10–20 MHz edge rates in buffered logic paths.

Pinout & Package

SOT523 is a 3-pin ultra-small surface-mount plastic package (1.60 mm × 1.60 mm × 0.75 mm), weighing 0.002 g, with matte tin-plated leads compliant to MIL-STD-202 Method 208 solderability requirements.

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter)ECurrent source terminal; connects to positive rail in high-side switch configuration.
2 (Base)BControl input node tied internally to R1; accepts logic-low signal to turn on transistor.
3 (Collector)CSwitched output node; sinks current when active, commonly connected to load ground return path.

Key Features

FeatureDesign Value
R1-only internal bias networkEliminates need for external base resistor, reducing BOM count and PCB footprint in level-shifting interfaces.
Epitaxial planar die constructionEnsures repeatable hFE distribution and low leakage (ICBO, IEBO ≤ −0.5 µA) over full temperature range.
Lead-free & halogen-free "Green" compoundUL 94V-0 rated molding material meets automotive and industrial RoHS 3 (2015/863/EU) compliance requirements.
Moisture sensitivity Level 1Enables standard SMT reflow without baking preconditioning, streamlining high-volume manufacturing flow.

Applications

Logic-Level Interface DriverLED Load Switch

Use Scenario: Driving 3.3 V or 5 V microcontroller GPIO outputs into higher-voltage loads (e.g., 12 V relay coils or optocouplers).

IC Role / Device Role: High-side level translator and current amplifier, converting low-current logic signals into robust switching action.

Use Value: Eliminates need for discrete base resistor and reduces board area by >30% versus discrete BJT + resistor solution.

Use Scenario: Controlling indicator or status LEDs in portable instrumentation with strict size constraints.

IC Role / Device Role: Constant-current sink switch enabling precise LED brightness control via PWM at base input.

Use Value: VCE(sat) ≤ −0.3 V minimizes forward voltage overhead, preserving ≥2.7 V headroom for red/green LEDs at 5 V supply.

Low-Power Sensor BiasingPower-Rail Enable Switch

Use Scenario: Providing stable bias current to analog sensor elements (e.g., thermistors or photodiodes) in battery-powered IoT nodes.

IC Role / Device Role: Precision current source configured with external emitter resistor, leveraging tight hFE tolerance and low ICBO.

Use Value: Built-in R1 stabilizes base voltage, reducing sensitivity to supply ripple and improving long-term bias accuracy.

Use Scenario: Enabling/disabling auxiliary 3.3 V or 5 V power domains in embedded systems based on system state signals.

IC Role / Device Role: Low-leakage, fast-turnoff enable switch placed between regulator output and downstream circuitry.

Use Value: ICBO ≤ −0.5 µA ensures <1 µA standby current, extending battery life in always-on monitoring modes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP pre-biased transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DDTA114YK-7Same R1 = 10 kΩ, but SOT-323 package (larger footprint, higher RθJA = 625°C/W)Less suitable for ultra-dense layouts; better thermal performance only with added copper pourSelect when board rework tolerance or hand-soldering access is prioritized over miniaturization.
NSV11400MUTBGPNP pre-biased with R1 = 10 kΩ, but includes R2 feedback resistor (dual-resistor topology); VCEO = −40 VHigher input impedance and improved temperature stability, but reduced voltage margin in 48 V systemsPrefer where stable hFE vs. temperature is critical, and supply rails remain ≤40 V.

Compared with DDTA114YK-7 and NSV11400MUTBG, DDTA114TE-7-F delivers the smallest form factor and highest voltage rating among 10 kΩ R1-only PNP bias transistors, making it optimal for miniaturized, high-reliability logic interface designs where board space and 50 V system margin are primary constraints.

Availability

DDTA114TE-7-F is available at Aetrix Electronics and suitable for logic-level interface drivers, LED load switches, low-power sensor biasing, and power-rail enable switches requiring stable component supply and AEC-Q200-aligned manufacturing traceability.

Supply support for DDTA114TE-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, high-reliability components for automotive, industrial, and consumer markets.

The DDTA (R1-only series) product line targets cost-sensitive, space-constrained digital interface and load-switching applications, emphasizing simplified design, reduced BOM count, and consistent RoHS-compliant manufacturing.

FAQ

What is the function of the internal 10 kΩ resistor in DDTA114TE-7-F?

The internal 10 kΩ resistor (R1) connects between base and emitter, providing fixed biasing that allows direct connection of a logic-low signal to the base terminal to saturate the PNP transistor. This eliminates the need for an external base resistor, simplifying circuit design and reducing PCB area in digital switching applications.

Can DDTA114TE-7-F be used in automotive applications?

DDTA114TE-7-F is manufactured in IATF 16949-certified facilities and is RoHS 3 compliant, but it is not AEC-Q101 qualified. For automotive use, Diodes recommends contacting their applications team to evaluate qualification pathways or selecting explicitly AEC-Q101-rated variants such as the DDTA114WQ-7.

How does thermal performance vary with PCB layout?

Thermal resistance is specified as 833°C/W for a 15 mm × 15 mm × 0.6 mm FR4 board with 1 oz copper on one side. Adding thermal vias or increasing copper area reduces RθJA; for example, doubling copper coverage lowers it to ~650°C/W, enabling sustained 100 mA operation up to +70°C ambient.

Is there a complementary NPN version of this part?

Yes-the DDTC114TE-7-F is the complementary NPN pre-biased transistor with identical 10 kΩ R1 value, SOT523 package, and matching electrical specifications (VCEO = 50 V, IC = 100 mA, VCE(sat) ≤ 0.3 V), enabling balanced push-pull or H-bridge driver designs.

DDTA114TE-7-F Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-523
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
10 kOhms
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 100µA, 1mA
Current - Collector Cutoff (Max):
500nA (ICBO)
Frequency - Transition:
250 MHz
Power - Max:
150 mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-523

DDTA114TE-7-F FAQ

1.How can I place an order for DDTA114TE-7-F through Aetrix?

Please submit a Request for Quotation (RFQ) for DDTA114TE-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DDTA114TE-7-F reliable?

The price and inventory of DDTA114TE-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DDTA114TE-7-F is usually 5 days.

3.What payment methods are accepted for DDTA114TE-7-F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DDTA114TE-7-F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DDTA114TE-7-F?

DDTA114TE-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DDTA114TE-7-F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DDTA114TE-7-F?

For technical support, including DDTA114TE-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DDTA114TE-7-F requirements.

6.How does Aetrix verify that DDTA114TE-7-F is sourced from the original manufacturer or authorized distributors?

All DDTA114TE-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DDTA114TE-7-F meets industry standards.

7.What is the process for return or replacement of DDTA114TE-7-F?

All DDTA114TE-7-F units undergo pre-shipment inspection (PSI). If there is an issue with DDTA114TE-7-F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DDTA114TE-7-F part is unused and in its original packaging.

Return procedure for DDTA114TE-7-F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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