Diodes Incorporated DDTA115EUA-7-F

Overview

DDTA115EUA-7-F from Diodes Incorporated is a PNP pre-biased small-signal transistor in SOT-323 package, featuring integrated bias resistors R1 = R2 = 100 kΩ, V_CEO = −50 V, I_C(max) = −20 mA, and DC current gain (G_L) of −82 at V_CE = −5 V, I_C = −5 mA. It functions as a digital switch or level translator in low-power logic interface circuits.

For engineers reviewing the DDTA115EUA-7-F datasheet, DDTA115EUA-7-F pinout, DDTA115EUA-7-F application, or DDTA115EUA-7-F equivalent, key selection criteria include input voltage thresholds (V_IN(on) = −1.9 to −3 V), output saturation voltage (V_O(on) = −0.1 to −0.3 V), resistor tolerance (±30%), and thermal resistance (R_θJA = 625 °C/W) for PCB-level thermal design.

Technical Context

This device implements a monolithic PNP bipolar junction transistor with two matched on-die base biasing resistors (R1 = R2 = 100 kΩ), enabling single-resistor-input switching without external bias network. Its epitaxial planar die construction ensures stable gain and low leakage across −55 °C to +150 °C operating range.

The internal resistor ratio (R2/R1 = 0.8–1.2) and specified V_I(off) (−0.5 to −1.1 V) support reliable turn-off under TTL/CMOS-compatible negative input conditions. Gain-bandwidth product f_T = 250 MHz confirms suitability for moderate-speed digital switching up to ~10 MHz edge rates.

Key Specifications

Pinout & Package

SOT-323 surface-mount plastic package (2.00–2.20 mm × 1.15–1.35 mm × 0.25–0.40 mm height), UL 94V-0 rated, moisture sensitivity Level 1, lead-free/RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP pre-biased transistor applications.

Compared with DDTA114EUA-7-F, this part trades drive strength for lower input current and tighter gain control; compared with DDTC115EUA-7-F, it enables high-side switching with negative logic compatibility - critical for legacy industrial control interfaces.

Availability

DDTA115EUA-7-F is available at Aetrix Electronics and suitable for industrial sensor interface, automotive body control module, and consumer IoT power sequencing requiring stable component supply and long-term lifecycle support.

Supply support for DDTA115EUA-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, cost-optimized components for industrial, computing, and automotive markets.

This part belongs to the DDTA/R1=R2 series of pre-biased transistors, designed specifically to simplify digital interface design by integrating precision-matched bias resistors and delivering guaranteed switching behavior across wide temperature ranges.

FAQ

What is the function of Pin 1 (Emitter) in DDTA115EUA-7-F?

Pin 1 is the emitter terminal, designated as GND(+) in the internal schematic. In standard PNP switch configuration, it connects to the positive supply rail, allowing the transistor to sink current from the collector (Pin 3) to the emitter when activated. This enables high-side switching functionality with negative input logic.

Can DDTA115EUA-7-F replace a standard PNP transistor like BC807?

No - DDTA115EUA-7-F integrates two 100 kΩ base bias resistors (R1 = R2), eliminating the need for external biasing components. A BC807 requires separate resistors for base drive and lacks guaranteed resistor matching or V_I(on)/V_I(off) thresholds. Direct substitution would require circuit redesign to remove external bias network.

What does the "-7-F" suffix indicate in the part number?

The "-7-F" suffix denotes packaging: SOT-323 case, 3,000 units per tape-and-reel, with lead-free (RoHS-compliant) finish. The "F" confirms compliance with JEDEC standard J-STD-020C moisture sensitivity Level 1 and halogen-free ("Green") molding compound per Diodes Incorporated policy.

Is thermal derating required for continuous operation at 25°C ambient?

Yes - although ambient is 25°C, the device's R_θJA = 625 °C/W means 200 mW power dissipation causes a 125°C junction rise. Since max T_j = +150°C, sustained 200 mW operation exceeds safe limits. Derate linearly above 25°C ambient using the curve in Figure 1: at 25°C, max P_D ≈ 200 mW; at 75°C ambient, limit to ~120 mW.