Diodes Incorporated DDTA115GE-7-F

Overview

DDTA115GE-7-F from Diodes Incorporated is a PNP pre-biased small-signal transistor with built-in 100 kΩ bias resistor (R2 only), housed in an SOT523 package. It delivers V_CEO = −50 V, I_C(max) = −100 mA, V_CE(sat) = −0.3 V at I_C = −10 mA/I_B = −0.5 mA, and h_FE = 82 (typ.) at I_C = −5 mA/V_CE = −5 V, enabling compact, reliable switching in automotive body control modules.

For engineers reviewing the DDTA115GE-7-F datasheet, DDTA115GE-7-F pinout, DDTA115GE-7-F application, or DDTA115GE-7-F equivalent, key selection criteria include verified R2-only bias topology, AEC-Q101 qualification for automotive use, SOT523 thermal performance (R_θJA = 833 °C/W), and guaranteed h_FE ≥ 82 at production-relevant bias conditions.

Technical Context

This device implements a single-PNP transistor with integrated base-emitter shunt resistor (R2 only, 100 kΩ ±30%), eliminating external bias components in high-side switch configurations. Its epitaxial planar die construction ensures stable gain (h_FE = 82 typ.) and low saturation voltage (V_CE(sat) ≤ −0.3 V) under −10 mA collector load.

Rated for −55 °C to +150 °C operation and qualified to AEC-Q101, it supports automotive-grade reliability in space-constrained PCB layouts. The SOT523 package provides 150 mW power dissipation on FR4 with minimum pad layout, and its 0.002 g mass enables lightweight module integration.

Key Specifications

Pinout & Package

SOT523 is a 3-pin ultra-small surface-mount plastic package (1.60 mm × 1.60 mm × 0.75 mm), rated UL 94V-0, moisture sensitivity level 1, and weighing 0.002 g. Matte tin-plated leads ensure solderability per MIL-STD-202, Method 208.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP pre-biased transistor applications.

Compared with DDTA115GE-7-F, DDTA115G-7-F reduces material cost by omitting halogen/antimony-free certification, while NSVDDTA115MXV6T1G adds ESD hardening for automated production-both retain identical electrical switching behavior and pinout.

Availability

DDTA115GE-7-F is available at Aetrix Electronics and suitable for automotive lighting control, industrial PLC output stages, consumer appliance motor interfaces, and medical diagnostic equipment requiring stable component supply across extended product lifecycles.

Supply support for DDTA115GE-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations spanning Asia, Europe, and North America.

The DDTA (R2-ONLY SERIES) E product line delivers pre-biased PNP transistors optimized for space-constrained, high-reliability switching in automotive and industrial systems where simplified biasing and AEC-Q101 validation are essential.

FAQ

What is the function of the "R2-only" configuration in DDTA115GE-7-F?

The R2-only configuration integrates a single 100 kΩ resistor between base and emitter, providing fixed bias for PNP transistor turn-on without requiring external resistors. This simplifies circuit design for high-side switching applications and ensures consistent base current under varying supply conditions, reducing component count and layout area.

Is DDTA115GE-7-F suitable for 5 V logic-level control?

Yes-its R2 = 100 kΩ enables direct drive from 3.3 V or 5 V microcontroller GPIO pins. At 5 V input, base current is ~45 µA, sufficient to saturate the transistor at up to 100 mA collector current. Verified V_CE(sat) ≤ −0.3 V confirms reliable saturation under these conditions.

How does the SOT523 package affect thermal performance?

The SOT523 package has a junction-to-ambient thermal resistance of 833 °C/W on FR4 with minimum pad layout. At 100 mA and −0.3 V V_CE(sat), power dissipation is 30 mW, resulting in ~25 °C junction rise above ambient-well within the −55 °C to +150 °C operating range and compatible with passive cooling in most applications.

Does DDTA115GE-7-F require external protection diodes in inductive load circuits?

Yes-while the device withstands −50 V V_CEO, inductive kickback from relay or motor loads can exceed this rating. An external flyback diode (e.g., 1N4148) must be placed across the load to clamp reverse voltage and prevent collector-base avalanche breakdown during turn-off transitions.