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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single, Pre-Biased Bipolar Transistors

Diodes Incorporated DDTA115GUA-7-F

Name: DDTA115GUA-7-F
Brand: Diodes Incorporated
SKU: DDTA115GUA-7-F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DDTA115GUA-7-F

Manufacturer:: Diodes Incorporated

Category:: Single, Pre-Biased Bipolar Transistors

Package:: SC-70, SOT-323

Datasheet:: DDTA115GUA-7-F.pdf

Description:: TRANS PREBIAS PNP 50V SOT323

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Product details

Overview

DDTA115GUA-7-F from Diodes Incorporated is a PNP pre-biased small-signal transistor with built-in 100 kΩ bias resistor (R2 only), rated for -50 V V_CEO, -100 mA I_C, and 200 mW power dissipation in SOT-323 package; used in digital switching and level-shifting circuits in portable consumer electronics.

For engineers reviewing the DDTA115GUA-7-F datasheet, DDTA115GUA-7-F pinout, DDTA115GUA-7-F application, or DDTA115GUA-7-F equivalent, key selection criteria include verified R2-only biasing topology, h_FE = 82 at I_C = -5 mA, V_CE(sat) ≤ -0.3 V, ESD robustness per JEDEC JS-001, and RoHS-compliant green molding compound.

Technical Context

This device implements a single-PNP bipolar junction transistor with monolithic integration of one external-base bias resistor (R2) - no R1 - enabling simplified high-side switch control without discrete bias networks. It operates in active and saturation regions with guaranteed V_CEO = -50 V and BVEBO = 5 V.

The SOT-323 package supports surface-mount reflow assembly with J-STD-020C Level 1 moisture sensitivity and UL 94V-0 flammability rating. Thermal resistance R_θJA is 625 °C/W on FR4 board with AP02001-recommended pad layout.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	-50 V - Maximum collector-emitter voltage before breakdown; enables use in 3.3 V/5 V logic-level switched rails.
I_C (max)	-100 mA - Continuous collector current limit; supports LED driver and load switch applications up to 100 mA.
P_D	200 mW - Power dissipation at T_A = 25 °C; derates linearly above 25 °C per Fig. 1 curve.
h_FE	82 (min) - DC current gain at I_C = -5 mA, V_CE = -5 V; ensures reliable saturation with low base drive.
R2	100 kΩ ±30% - Integrated base-emitter pull-up resistor; eliminates need for external bias component in inverter configurations.
V_CE(sat)	≤ -0.3 V - Saturation voltage at I_C = -10 mA, I_B = -0.5 mA; minimizes conduction loss in switching mode.
T_j range	-55 to +150 °C - Junction temperature operating window; qualified for industrial ambient environments.

Pinout & Package

Package: SOT-323 - ultra-small plastic surface-mount case (2.00–2.20 mm length, 1.15–1.35 mm width, 0.25–0.40 mm thickness), lead-free matte tin plating, UL 94V-0 rated, moisture sensitivity Level 1.

Pin/Terminal	Circuit Role	Design Meaning
Emitter (E)	Current sink terminal	Connected to ground or low-side reference; forms common-emitter switching node.
Collector (C)	Current source terminal	Drives load toward positive rail; placed on high-side of switched load (e.g., LED anode).
Base (B)	Control input node	Internally connected to R2 (100 kΩ); accepts TTL/CMOS-compatible logic-high to turn off device.

Key Features

Feature	Design Value
R2-only bias network	Single 100 kΩ resistor between base and emitter eliminates external bias components and reduces PCB footprint by ≥2 parts.
Green molding compound	Halogen-free, Sb₂O₃-free encapsulant compliant with Diodes Inc.'s "Green" Policy (date code 0627+).
Low V_CE(sat)	≤ -0.3 V at I_C = -10 mA ensures < 3 mW conduction loss in 3.3 V systems, improving thermal margin.
High h_FE	Min 82 at I_C = -5 mA allows full saturation with ≤ 61 μA base current, reducing MCU GPIO loading.
SOT-323 footprint	0.006 g weight and 1.2 mm × 2.1 mm outline enable space-constrained designs such as wearables and IoT sensors.

Applications

LED Indicator Driver

Microcontroller GPIO Expander

Use Scenario: Driving discrete status LEDs from 3.3 V microcontroller outputs with inverted logic.

IC Role / Device Role / Timing Role: High-side PNP switch controlled by MCU GPIO low-state to illuminate LED.

Use Value: Built-in R2 eliminates external pull-up, saving 1 resistor and 2 pads per channel while maintaining V_CE(sat) ≤ -0.3 V.

Use Scenario: Adding active-low output capability to resource-limited MCUs with limited drive strength.

IC Role / Device Role / Timing Role: Logic-level translator and current amplifier for driving 50 mA loads from 3.3 V GPIO.

Use Value: h_FE = 82 ensures full saturation with ≤ 61 μA base current, avoiding GPIO overcurrent and enabling direct connection.

Level-Shifting Interface

Power Rail Enable Switch

Use Scenario: Converting 1.8 V logic signals to control 5 V peripheral enable lines.

IC Role / Device Role / Timing Role: Inverting level shifter with V_CEO = -50 V tolerance for 5 V rail compatibility.

Use Value: Guaranteed BVEBO = 5 V and V_CEO = -50 V allow safe operation across 1.8 V/5 V domain boundaries without clamping diodes.

Use Scenario: Enabling/disabling auxiliary 3.3 V power rails in battery-powered devices.

IC Role / Device Role / Timing Role: Low-quiescent-current high-side switch activated by system controller.

Use Value: I_CBO ≤ -0.5 μA and IEBO = -30 μA at V_EB = -4 V ensure < 1 μA standby leakage, extending battery life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP pre-biased transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DDTA115T-7-F	SOT-523 package (1.2 × 0.8 mm), same R2 = 100 kΩ, identical electrical specs except R_θJA = 750 °C/W.	Higher thermal resistance limits continuous I_C in compact layouts; suitable only where board area is more constrained than thermal budget.	Select when footprint reduction outweighs thermal derating needs.
NSV11500MT1G	PNP pre-biased (R2 = 100 kΩ), but includes R1 = 100 kΩ; dual-resistor topology increases input impedance and reduces base current sensitivity.	Not a drop-in replacement due to different bias configuration; requires circuit redesign to accommodate R1-R2 divider.	Choose only when higher noise immunity or tighter h_FE stability across temperature is required.

Compared with DDTA115GUA-7-F, DDTA115T-7-F trades thermal performance for smaller size, while NSV11500MT1G adds complexity for improved bias stability - neither offers identical R2-only simplicity and SOT-323 thermal balance.

Availability

DDTA115GUA-7-F is available at Aetrix Electronics and suitable for LED indicator drivers, microcontroller GPIO expansion, and level-shifting interfaces requiring stable component supply and consistent RoHS-compliant green packaging.

Supply support for DDTA115GUA-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The DDTA (R2-ONLY SERIES) UA product line delivers pre-biased PNP transistors optimized for cost-sensitive, space-constrained digital switching applications in consumer and industrial electronics.

FAQ

What is the function of the internal R2 resistor in DDTA115GUA-7-F?

The internal R2 resistor (100 kΩ ±30%) connects the base to the emitter, forming a pull-up network that ensures the transistor remains OFF when the base is left floating or driven high. This eliminates the need for an external resistor in inverter or high-side switch configurations, simplifying PCB layout and reducing part count.

Can DDTA115GUA-7-F be used in linear amplification applications?

No - DDTA115GUA-7-F is characterized and qualified exclusively for switching operation. Its h_FE specification is given at I_C = -5 mA and V_CE = -5 V, and its R2-only biasing lacks the stability required for linear gain control. For analog amplification, discrete PNP transistors without integrated resistors (e.g., BC807) are recommended.

Is DDTA115GUA-7-F compatible with lead-free reflow profiles?

Yes - it features matte tin-plated leads annealed over Alloy 42 leadframe and complies with J-STD-020C Level 1 moisture sensitivity. The device supports standard Pb-free reflow profiles (peak temperature ≤ 260 °C) without preconditioning, provided the recommended SOT-323 pad layout (AP02001) is followed.

How does the SOT-323 package affect thermal performance?

The SOT-323 package delivers R_θJA = 625 °C/W on FR4 boards using Diodes Inc.'s AP02001 pad layout. This allows 200 mW dissipation at T_A = 25 °C but requires derating to ~125 mW at 75 °C ambient. Layout optimization (copper pour under exposed pad, thermal vias) can improve heat transfer but does not change the specified R_θJA.

DDTA115GUA-7-F Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP - Pre-Biased

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Resistor - Base (R1):: -

Resistor - Emitter Base (R2):: 100 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:: 82 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 500µA, 10mA

Current - Collector Cutoff (Max):: 500nA (ICBO)

Frequency - Transition:: 250 MHz

Power - Max:: 200 mW

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-323

DDTA115GUA-7-F FAQ

1.How can I place an order for DDTA115GUA-7-F through Aetrix?

Please submit a Request for Quotation (RFQ) for DDTA115GUA-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DDTA115GUA-7-F reliable?

The price and inventory of DDTA115GUA-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DDTA115GUA-7-F is usually 5 days.

3.What payment methods are accepted for DDTA115GUA-7-F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DDTA115GUA-7-F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DDTA115GUA-7-F?

DDTA115GUA-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DDTA115GUA-7-F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DDTA115GUA-7-F?

For technical support, including DDTA115GUA-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DDTA115GUA-7-F requirements.

6.How does Aetrix verify that DDTA115GUA-7-F is sourced from the original manufacturer or authorized distributors?

All DDTA115GUA-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DDTA115GUA-7-F meets industry standards.

7.What is the process for return or replacement of DDTA115GUA-7-F?

All DDTA115GUA-7-F units undergo pre-shipment inspection (PSI). If there is an issue with DDTA115GUA-7-F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DDTA115GUA-7-F part is unused and in its original packaging.

Return procedure for DDTA115GUA-7-F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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