Diodes Incorporated DDTA115TE-7-F

Overview

DDTA115TE-7-F from Diodes Incorporated is a PNP pre-biased transistor with single built-in bias resistor (R1 = 100 kΩ), housed in an SOT523 package. It delivers V_CEO = −50 V, I_C = −100 mA peak pulse, V_CE(sat) ≤ −0.3 V at I_C/I_B = −0.5 mA/−0.05 mA, and h_FE = 100–600, enabling compact logic-level switching in space-constrained automotive and industrial control circuits.

For engineers reviewing the DDTA115TE-7-F datasheet, DDTA115TE-7-F pinout, DDTA115TE-7-F application, or DDTA115TE-7-F equivalent, key selection criteria include verified R1-only bias topology, guaranteed −50 V breakdown ratings, SOT523 thermal performance (R_θJA = 833 °C/W), and AEC-Q101 readiness for automotive signal conditioning.

Technical Context

This device implements a monolithic PNP bipolar junction transistor with an integrated 100 kΩ base-emitter pull-up resistor (R1 only), eliminating external bias components in digital switching applications. Its epitaxial planar die construction ensures stable h_FE across temperature (−55 °C to +150 °C) and low V_CE(sat) under light drive conditions.

The SOT523 package supports high-density PCB layouts with 0.002 g mass and UL 94V-0 molding compound. Thermal derating begins at +25 °C ambient, maintaining 150 mW power dissipation up to 100 °C ambient before linear reduction per Figure 1.

Key Specifications

Pinout & Package

Package: SOT523 - ultra-small surface-mount plastic case (1.60 mm × 1.60 mm × 0.75 mm), matte tin-plated leads, moisture sensitivity level 1, weight ≈ 0.002 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP pre-biased transistor applications.

Compared with DDTA114TE-7-F and DDTA125TE-7-F, DDTA115TE-7-F strikes a balance between base drive efficiency and speed-offering 10× higher R1 than DDTA114TE for lower GPIO loading, yet 2× lower than DDTA125TE to avoid excessive turn-on delay in real-time control loops.

Availability

DDTA115TE-7-F is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input modules, and consumer appliance power sequencing requiring stable component supply, full RoHS/Green compliance, and AEC-Q101 traceability.

Supply support for DDTA115TE-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with ISO/TS 16949 and IATF 16949 certifications.

This part belongs to the DDTA R1-Only Series of pre-biased transistors, designed specifically to simplify digital switching designs by integrating a single precision bias resistor-reducing layout complexity and improving consistency in high-volume manufacturing.

FAQ

What is the maximum continuous collector current for DDTA115TE-7-F?

The datasheet specifies a peak pulse collector current (I_CM) of −100 mA under pulsed conditions (≤300 µs, ≤2% duty cycle). Continuous DC current is not explicitly rated, but thermal limits (P_D = 150 mW, R_θJA = 833 °C/W) constrain steady-state I_C to approximately −15 mA at +25 °C ambient with no heatsink-derating linearly above that temperature.

Does DDTA115TE-7-F require an external base resistor?

No. DDTA115TE-7-F integrates a single 100 kΩ resistor (R1) between base and emitter, forming a complete pre-biased configuration. No external base resistor is needed for standard digital switching applications-only the collector, emitter, and input signal connections are required.

Is DDTA115TE-7-F qualified for automotive use?

While DDTA115TE-7-F is manufactured in IATF 16949 certified facilities and supports PPAP documentation, it is not formally AEC-Q101 qualified out-of-the-box. Customers requiring automotive qualification must engage Diodes Incorporated directly to initiate the change control and test program for this specific part number.

How does the SOT523 package affect thermal performance?

The SOT523 package delivers R_θJA = 833 °C/W on a 15 mm × 15 mm × 0.6 mm FR4 board with 1 oz copper. This high thermal resistance means power dissipation must be carefully managed: at 150 mW, junction temperature rises ~125 °C above ambient-limiting usable power in enclosed or high-ambient environments unless board layout enhances heat spreading.