Diodes Incorporated DDTA115TUA-7

Overview

DDTA115TUA-7 from Diodes Incorporated is a PNP pre-biased transistor in SOT323 package with built-in 100 kΩ bias resistor (R1 only), −50 V V_CEO, −100 mA I_C, −0.3 V V_CE(sat) at I_C/I_B = −0.5 mA/−0.05 mA, and h_FE of 100–600. It enables compact, reliable switching in low-power digital interface circuits such as LED drivers and microcontroller I/O level translators.

For engineers reviewing the DDTA115TUA-7 datasheet, DDTA115TUA-7 pinout, DDTA115TUA-7 application, or DDTA115TUA-7 equivalent, key selection criteria include verified R1-only bias topology, guaranteed V_CE(sat) under light-load switching conditions, SOT323 thermal performance (R_θJA = 625 °C/W), and AEC-Q101 readiness for automotive signal conditioning.

Technical Context

This device implements a single-PNP bipolar junction transistor with monolithically integrated base-emitter pull-up resistor (R1 = 100 kΩ ±30%), eliminating external bias components. Its epitaxial planar die construction ensures stable h_FE across −55 °C to +150 °C and supports fast switching up to 250 MHz f_T.

The SOT323 package provides 0.006 g mass and UL 94V-0 flammability rating, with matte tin-plated leads solderable per MIL-STD-202 Method 208. Thermal derating follows a linear 1.6 mW/°C reduction above +25 °C ambient, consistent with its 200 mW P_D rating on FR4 PCB.

Key Specifications

Pinout & Package

SOT323 three-terminal surface-mount package with 0.65 mm lead pitch, 2.15 mm × 2.10 mm body size, and 0.30 mm typical lead width. Molded green compound meets UL 94V-0 and J-STD-020 Level 1 moisture sensitivity requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP pre-biased transistor applications.

Compared with DDTA114TUA-7-F, DDTA115TUA-7 offers 10× higher input impedance for reduced standby current, while NSV11500MT1G provides identical R1 value but mandates schematic-level polarity change and layout revision.

Availability

DDTA115TUA-7 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller I/O translators, and automotive sensor interfaces requiring stable component supply, RoHS 3 compliance, and AEC-Q101-ready qualification support.

Supply support for DDTA115TUA-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DDTA (R1-only series) UA product line delivers pre-biased PNP transistors optimized for space-constrained, low-power signal switching in automotive, industrial, and consumer electronics where simplified biasing and AEC-Q101 readiness are critical.

FAQ

What is the exact value and tolerance of the built-in bias resistor R1?

The DDTA115TUA-7 integrates a single base-emitter pull-up resistor R1 with nominal value 100 kΩ and tolerance of ±30%, confirmed in the Electrical Characteristics table of DS30327 Rev. 7-2. This value is laser-trimmed during wafer test and remains stable across temperature and lifetime per AEC-Q101 stress testing.

Can DDTA115TUA-7 be used in high-side switch configurations with 24 V supply?

Yes - its −50 V V_CEO and −50 V V_CBO ratings allow safe operation with 24 V rail voltages. When used as a high-side switch, the emitter connects to 24 V, collector drives the load to ground, and base is driven low by MCU or logic. V_CE(sat) remains ≤−0.3 V under specified I_C/I_B conditions.

Is DDTA115TUA-7 qualified to AEC-Q101?

While the datasheet states "for automotive applications requiring specific change control (i.e., parts qualified to AEC-Q100/101/200…) please contact us", Diodes' official product definitions page confirms DDTA-series devices meet AEC-Q101 stress test requirements and are PPAP-capable when manufactured in IATF 16949-certified facilities.

How does the SOT323 package affect thermal performance in continuous operation?

With R_θJA = 625 °C/W on FR4 PCB using minimum recommended pad layout, DDTA115TUA-7 dissipates 200 mW at +25 °C ambient. At 100 mW dissipation, junction temperature rises ~62.5 °C above ambient - well within its −55 °C to +150 °C operating range, provided board layout adheres to Diodes' published SOT323 pad dimensions.