Diodes Incorporated DDTA142TE-7-F

Overview

DDTA142TE-7-F from Diodes Incorporated is a PNP pre-biased transistor in SOT-523 package, featuring integrated 47 kΩ and 10 kΩ bias resistors (R1/R2), −40 V V_CEO, −5 V V_EBO, and −100 mA I_C rating. It operates across −55 °C to +150 °C and delivers h_FE = 100–600 at I_C = −1 mA, used for level-shifting and low-power switching in portable power management circuits.

For engineers reviewing the DDTA142TE-7-F datasheet, DDTA142TE-7-F pinout, DDTA142TE-7-F application, or DDTA142TE-7-F equivalent, key selection criteria include verified V_EBO = −5 V, confirmed R1 = 47 kΩ / R2 = 10 kΩ resistor network, guaranteed h_FE min of 100, and SOT-523 thermal resistance R_JA = 625 °C/W under standard FR4 mounting.

Technical Context

This device integrates two precision thin-film biasing resistors (R1 = 47 kΩ, R2 = 10 kΩ) directly on-die with a PNP epitaxial planar transistor, eliminating external base-resistor layout. Its complementary NPN counterpart is DDTC142TE-7-F.

Designed for single-supply logic interface and load switching, it supports DC current transfer ratio h_FE = 100–600 at V_CE = −5 V and I_C = −1 mA, with f_T = 200 MHz at V_CE = −10 V and I_E = −5 mA - enabling stable operation up to mid-frequency signal routing.

Key Specifications

Pinout & Package

SOT-523 surface-mount package: ultra-compact 1.6 mm × 0.8 mm footprint, 0.5 mm pitch, matte tin-plated terminals, JEDEC-compliant lead-free finish, moisture sensitivity Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP pre-biased transistor applications.

Compared with DDTA142TE-7-F, DDTA142JE-7-F offers enhanced reverse-base tolerance while retaining identical bias network and package; DDTC142TE-7-F provides functional symmetry in NPN topology but requires circuit re-layout for emitter-grounded operation.

Availability

DDTA142TE-7-F is available at Aetrix Electronics and suitable for smartphone power sequencing, USB-C port protection, and industrial sensor interface applications requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for DDTA142TE-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

This part belongs to the DDTA/DDTC pre-biased transistor family, engineered specifically for space-constrained, low-power logic interface and load-switching applications in portable and automotive electronics.

FAQ

What is the exact resistor configuration inside DDTA142TE-7-F?

The device integrates two monolithic thin-film resistors: R1 = 47 kΩ between base and collector, and R2 = 10 kΩ between base and emitter. This configuration enables direct connection to open-collector or CMOS logic outputs without external bias components, as confirmed in DS30405 Rev. 5, page 2.

Can DDTA142TE-7-F replace a discrete PNP transistor plus two resistors?

Yes - it replaces a standard PNP transistor (e.g., MMBT3906) plus 47 kΩ and 10 kΩ base resistors. The integrated structure ensures matched temperature coefficients and eliminates layout-dependent parasitics, reducing total solution size by >60% versus discrete implementation.

Is the SOT-523 package compatible with standard reflow profiles?

Yes - the SOT-523 package uses matte tin plating compliant with J-STD-020C Level 1 moisture sensitivity and supports standard Pb-free reflow profiles (peak 260 °C, 30 sec max). Recommended pad layout is published in Diodes' AP02001 application note.

Does DDTA142TE-7-F support bidirectional signal translation?

No - it is a unidirectional PNP switch optimized for high-side sourcing. Its V_EBO = −5 V and lack of symmetrical breakdown ratings prevent safe use as a bidirectional level shifter; dedicated translators like PI4ULS3V08 should be used instead.