Diodes Incorporated DDTA142TU-7

Overview

DDTA142TU-7 from Diodes Incorporated is a PNP pre-biased transistor in SOT-323 package, featuring integrated 47 kΩ base-emitter resistor (R1) and open-circuit R2, −5 V emitter-base breakdown voltage, −40 V collector-emitter breakdown voltage, and h_FE of 100–600 at I_C = −1 mA. It operates across −55 °C to +150 °C and delivers −0.3 V V_CE(sat) at −5 mA I_C, suited for low-power digital switching in portable logic interfaces.

For engineers reviewing the DDTA142TU-7 datasheet, DDTA142TU-7 pinout, DDTA142TU-7 application, or DDTA142TU-7 equivalent, key selection criteria include verified R1/R2 bias network topology, guaranteed h_FE range under −1 mA I_C, SOT-323 thermal resistance (625 °C/W), and −5 V BVEBO rating for ESD-sensitive input stages.

Technical Context

This device implements a single PNP bipolar junction transistor with monolithically integrated base biasing resistors-R1 connected between base and emitter, R2 omitted (open)-enabling direct TTL/CMOS-compatible level shifting without external components. Its −5 V BVEBO rating ensures robustness against reverse-biased input transients in unidirectional signal conditioning paths.

Designed for discrete logic interface and load switching, it operates with fixed DC current transfer ratio (h_FE) of 100–600 at V_CE = −5 V and I_C = −1 mA, and exhibits f_T = 200 MHz, supporting high-speed digital edge detection up to ~10 MHz toggle rates under light capacitive loads.

Key Specifications

Pinout & Package

Package: SOT-323 - ultra-small surface-mount plastic case (2.00–2.20 mm length, 1.15–1.35 mm width), UL 94V-0 rated, moisture sensitivity Level 1, lead-free matte tin plating over Alloy 42 leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP pre-biased transistor applications.

Compared with DDTA142TU-7, DDTA142EU-7-F trades off input leakage for improved turn-off speed, while NSV14200MT1G sacrifices gain consistency and bandwidth for broader manufacturer availability-neither matches the original's combination of wide h_FE, low V_CE(sat), and 200 MHz f_T in SOT-323.

Availability

DDTA142TU-7 is available at Aetrix Electronics and suitable for logic-level translation, active-low load switching, microcontroller GPIO expansion, and ESD-sensitive input protection requiring stable component supply and long-term obsolescence mitigation planning.

Supply support for DDTA142TU-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with design centers across Asia, Europe, and the U.S., serving industrial, computing, consumer, and communications markets.

The DDTA series targets cost-sensitive, space-constrained digital interface applications where integrated biasing eliminates external passives-designed specifically for logic translation, load switching, and signal conditioning in portable and embedded systems.

FAQ

Is DDTA142TU-7 still in active production?

No-DDTA142TU-7 is officially marked obsolete by Diodes Incorporated as of June 2021 (DS30402 Rev. 7-4). Aetrix Electronics maintains legacy inventory and supports last-time-buy programs, including full traceability and extended lifecycle documentation for ongoing production needs.

What is the function of the open-circuit R2 in DDTA142TU-7?

The open-circuit R2 means no internal resistor connects base to collector. This preserves maximum h_FE and minimizes standby leakage (I_O(off) = −0.5 µA), making it ideal for low-quiescent-current applications where unintended base current paths must be avoided.

Can DDTA142TU-7 replace a standard PNP transistor like BC807?

Yes, but only when the circuit relies on external base resistors. DDTA142TU-7 integrates R1 = 47 kΩ to emitter, so replacing BC807 requires removing its external base resistor and verifying that the resulting base current (≈−0.1 mA at −5 V) yields sufficient h_FE-dependent collector current.

What is the maximum safe operating voltage between collector and emitter?

The absolute maximum collector-emitter voltage is −40 V (BV_CEO), tested at I_C = −1 mA. Operation above this rating risks avalanche breakdown and permanent degradation-even brief transients exceeding −40 V require clamping protection per the datasheet's maximum ratings table.