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Diodes Incorporated DDTB113EU-7-F
- Part No.:
- DDTB113EU-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
DDTB113EU-7-F.pdf
- Description:
- TRANS PREBIAS PNP 50V SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:6,442
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Product details
Overview
DDTB113EU-7-F from Diodes Incorporated is a PNP pre-biased transistor in SOT323 package with integrated 1 kΩ base-emitter and 1 kΩ base-collector biasing resistors, rated for -50 V VCBO, -40 V VCEO, and -500 mA IC, used in compact logic-level switching and signal inversion circuits in space-constrained consumer and industrial PCBs.
For engineers reviewing the DDTB113EU-7-F datasheet, DDTB113EU-7-F pinout, DDTB113EU-7-F application, or DDTB113EU-7-F equivalent, key selection criteria include verified VCE(sat) ≤ -0.3 V at -50 mA/-2.5 mA, guaranteed DC current gain (hFE) of 33–56, input voltage thresholds (VI(on) = -3.0 V, VI(off) = -0.5 V), and automotive-grade packaging compliance per J-STD-020 Level 1 moisture sensitivity.
Technical Context
This device integrates two monolithic resistors (R1 = R2 = 1 kΩ) directly into a PNP epitaxial planar transistor die to eliminate external bias components, enabling single-pin control of saturated switching with predictable turn-on/turn-off thresholds. Its internal resistor network sets fixed base current paths independent of external drive impedance.
The SOT323 package supports automated pick-and-place assembly and delivers 200 mW power dissipation with 625 °C/W junction-to-ambient thermal resistance on FR4 PCBs using minimum recommended pad layout. It operates across -55 °C to +150 °C and meets AEC-Q101 stress test requirements for automotive use when qualified.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCBO | -50 V - Maximum reverse voltage between collector and base before breakdown |
| VCEO | -40 V - Maximum reverse voltage between collector and emitter under open-base condition |
| IC | -500 mA - Continuous collector current rating defining safe switching capacity |
| VCE(sat) | -0.3 V @ -50 mA/-2.5 mA - Low saturation voltage ensures minimal power loss in ON-state |
| hFE | 33–56 - Confirmed DC current gain range at -5 mA/-5 V, enabling reliable digital switching margins |
| R1 / R2 | 1 kΩ / 1 kΩ - Matched internal bias resistors eliminate need for external pull-up/down components |
| fT | 200 MHz - Gain-bandwidth product confirming suitability for low-speed digital and audio-frequency switching |
Pinout & Package
Package: SOT323 - ultra-small surface-mount plastic case (2.15 mm × 2.10 mm × 0.95 mm), lead-free, halogen-free, RoHS-compliant, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | E | Current sink terminal; connected internally to R1 and R2 network ground reference |
| 2 (Base) | B | Control input node; tied to both R1 (to emitter) and R2 (to collector) for fixed bias ratio |
| 3 (Collector) | C | Output switch node; connects to load and R2; polarity defines PNP active conduction path |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bias resistors | Monolithic 1 kΩ R1 and 1 kΩ R2 reduce BOM count and layout area by eliminating two external SMD resistors |
| Epitaxial planar construction | Enables tight parameter distribution and stable hFE across temperature (-55 °C to +150 °C) |
| SOT323 footprint | 0.006 g weight and 2.15 mm × 2.10 mm outline support high-density routing in wearables and IoT edge nodes |
| AEC-Q101 readiness | Manufactured in IATF 16949-certified facilities; PPAP-capable for automotive signal conditioning modules |
Applications
| Logic-Level Signal Inversion | LED Driver Switching |
|---|---|
Use Scenario: Converting TTL/CMOS high-low logic states to inverted outputs in microcontroller GPIO expansion circuits. IC Role / Device Role: PNP pre-biased transistor acting as active-low level shifter with fixed bias network. Use Value: Eliminates discrete resistor pair while maintaining VI(on) = -3.0 V threshold and VCE(sat) ≤ -0.3 V for <100 mW dissipation per channel. | Use Scenario: Driving common-anode indicator LEDs from 3.3 V or 5 V MCU outputs with current limiting. IC Role / Device Role: Low-side switch controlling LED cathode current path with built-in base biasing. Use Value: Delivers -500 mA IC capability and -0.3 V saturation drop to maximize LED forward voltage margin and efficiency. |
| Load Switch Control | Power Rail Enable Circuit |
Use Scenario: Enabling/disabling 12 V or 24 V peripheral loads (e.g., sensors, relays) via microcontroller GPIO. IC Role / Device Role: High-voltage PNP switch with integrated biasing for direct GPIO-compatible control. Use Value: Supports -40 V VCEO and -50 V VCBO, allowing safe operation with inductive kickback suppression in industrial control panels. | Use Scenario: Sequencing power rails in multi-rail embedded systems (e.g., FPGA core/I/O supply enable). IC Role / Device Role: Precision-enable transistor ensuring clean rail activation with defined VI(off) = -0.5 V noise immunity. Use Value: Guaranteed -0.5 V turn-off threshold prevents false triggering from EMI or supply ripple in safety-critical subsystems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP pre-biased transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DDTB123EU-7-F | R1 = R2 = 2.2 kΩ; higher input impedance; VI(on) = -3.0 V same, but IL = -3.8 mA @ -5 V | Better suited for higher-impedance MCU outputs where lower base current is required | Select when driving from weak-sink GPIO or when reducing base current draw is critical |
| DDTB113ZU-7-F | R1 = 1 kΩ, R2 = 10 kΩ; asymmetric bias; VI(off) = -0.3 V, VI(on) = -3.0 V, hFE = 56 | Improved noise immunity and sharper switching due to higher R2-to-R1 ratio | Choose for noisy environments or where tighter VI(on)/VI(off) hysteresis is needed |
Compared with DDTB123EU-7-F and DDTB113ZU-7-F, the DDTB113EU-7-F offers balanced 1 kΩ/1 kΩ biasing ideal for general-purpose logic inversion and medium-current switching, whereas DDTB123EU reduces base loading and DDTB113ZU improves noise rejection via asymmetric resistor values.
Availability
DDTB113EU-7-F is available at Aetrix Electronics and suitable for logic-level signal inversion, LED driver switching, and load switch control requiring stable component supply and long-term obsolescence management.
Supply support for DDTB113EU-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DDTB series belongs to Diodes' pre-biased transistor product line, engineered specifically for space-constrained digital interface and power control applications where simplified biasing and AEC-Q101 readiness are essential.
FAQ
Is DDTB113EU-7-F suitable for automotive applications?
Yes - DDTB113EU-7-F is manufactured in IATF 16949-certified facilities and qualifies for AEC-Q101 stress testing. While the specific part number is marked "Obsolete" in Diodes' ordering table, it remains supported for legacy automotive designs with PPAP documentation available upon request through Diodes representatives.
What is the maximum operating temperature for DDTB113EU-7-F?
The device is rated for continuous operation from -55 °C to +150 °C ambient temperature. Its thermal resistance (RθJA) is 625 °C/W on FR4 PCB with minimum recommended pad layout, meaning junction temperature stays within safe limits up to 200 mW dissipation at +25 °C ambient.
Can DDTB113EU-7-F replace a standard PNP transistor like BC807?
No - DDTB113EU-7-F integrates 1 kΩ bias resistors and is optimized for direct GPIO interfacing without external components. A BC807 requires external base resistors and lacks guaranteed VI(on)/VI(off) thresholds. Substitution would require circuit redesign to accommodate different biasing architecture and gain characteristics.
Does DDTB113EU-7-F have lead-free and halogen-free certification?
Yes - it is fully RoHS-compliant (2015/863/EU), lead-free, and halogen-free ("Green" per Diodes' definition: <900 ppm Br, <900 ppm Cl, <1000 ppm Sb). The SOT323 package uses matte tin-plated leads and UL 94V-0 molding compound.
DDTB113EU-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP - Pre-Biased
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 1 kOhms
- Resistor - Emitter Base (R2):
- 1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 33 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max):
- 500nA
- Frequency - Transition:
- 200 MHz
- Power - Max:
- 200 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
DDTB113EU-7-F FAQ
1.How can I place an order for DDTB113EU-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for DDTB113EU-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DDTB113EU-7-F reliable?
The price and inventory of DDTB113EU-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DDTB113EU-7-F is usually 5 days.
3.What payment methods are accepted for DDTB113EU-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DDTB113EU-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DDTB113EU-7-F?
DDTB113EU-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DDTB113EU-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DDTB113EU-7-F?
For technical support, including DDTB113EU-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DDTB113EU-7-F requirements.
6.How does Aetrix verify that DDTB113EU-7-F is sourced from the original manufacturer or authorized distributors?
All DDTB113EU-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DDTB113EU-7-F meets industry standards.
7.What is the process for return or replacement of DDTB113EU-7-F?
All DDTB113EU-7-F units undergo pre-shipment inspection (PSI). If there is an issue with DDTB113EU-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DDTB113EU-7-F part is unused and in its original packaging.
Return procedure for DDTB113EU-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DDTB113EU-7-F Tags
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MUN5211T1G
onsemi
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DTC043ZEBTL
Rohm Semiconductor
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DTC114EKAT146
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DDTD113ZC-7-F
Diodes Incorporated
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DRDNB16W-7
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PDTC143ET,215
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PDTC143XT,215
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MMUN2211LT1G
onsemi
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PDTC124ET,215
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