Diodes Incorporated DDTB114TU-7-F

Overview

DDTB114TU-7-F from Diodes Incorporated is a PNP pre-biased transistor in SOT323 package with integrated 10 kΩ base-emitter bias resistor (R1), open-circuit base-collector resistor (R2), V_CEO = −40 V, I_C = −500 mA, and h_FE = 100–600 at I_C = −5 mA. It functions as a digitally controlled switch in low-voltage logic interface circuits.

For engineers reviewing the DDTB114TU-7-F datasheet, DDTB114TU-7-F pinout, DDTB114TU-7-F application, or DDTB114TU-7-F equivalent, key selection criteria include its single-bias-resistor topology, −5 V E-B breakdown rating, −0.3 V saturation voltage at −50 mA, SOT323 thermal resistance (625 °C/W), and automotive-grade qualification readiness.

Technical Context

This device is a monolithic PNP bipolar junction transistor with an embedded 10 kΩ resistor between base and emitter terminals, eliminating external bias components. Its R2 terminal is unconnected (open), enabling direct digital input drive without pull-up/pull-down conflicts.

The transistor operates in saturation switching mode with guaranteed V_CE(sat) ≤ −0.3 V at I_C = −50 mA / I_B = −2.5 mA, and supports logic-level compatible input thresholds (V_I(on) = −3.0 V at I_O = −10 mA). It is rated for −55 °C to +150 °C operation and meets AEC-Q101 stress test requirements when manufactured in IATF 16949 facilities.

Key Specifications

Pinout & Package

Package: SOT323 - ultra-small surface-mount plastic package (2.15 mm × 2.10 mm × 0.95 mm), moisture sensitivity level 1, matte tin-plated leads, weight ≈ 0.006 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP pre-biased transistor applications.

Compared with DDTB123TU-7-F and DDTB143TU-7-F, DDTB114TU-7-F offers the highest input impedance (10 kΩ R1), minimizing MCU current draw and improving noise immunity-but requires verification of sufficient V_I(on) margin in high-impedance source applications.

Availability

DDTB114TU-7-F is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO expansion, and automotive body control modules requiring stable component supply and long-term obsolescence management.

Supply support for DDTB114TU-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DDTB series belongs to Diodes' pre-biased transistor product line, engineered specifically for space-constrained digital switching applications where simplified biasing, consistent gain, and AEC-Q101 readiness are critical.

FAQ

What does "R2 = Open" mean for DDTB114TU-7-F?

"R2 = Open" means no internal resistor connects the base to the collector terminal. This eliminates unintended feedback paths and ensures predictable digital switching behavior-especially important when interfacing with open-drain or high-impedance logic sources that could otherwise cause latch-up or erratic turn-off.

Can DDTB114TU-7-F replace a standard PNP BJT like BC807?

Yes, but only when the circuit uses base biasing through a single resistor to emitter. DDTB114TU-7-F integrates that 10 kΩ resistor, so external bias components must be removed. It cannot substitute for circuits requiring separate base and collector resistors or linear amplification due to fixed bias topology and optimized saturation characteristics.

Is DDTB114TU-7-F qualified for automotive use?

DDTB114TU-7-F is built on Diodes' AEC-Q101 qualified process and manufactured in IATF 16949 certified facilities. While the part itself is marked "Obsolete" in Diodes' ordering table, it remains eligible for PPAP submission and automotive qualification upon customer request and program-specific validation.

Why is V_I(on) specified as −3.0 V instead of 0.7 V?

V_I(on) = −3.0 V reflects the input voltage required to achieve I_O = −10 mA with V_O = −0.3 V - a system-level switching threshold defined under load, not the base-emitter diode drop. This guarantees reliable turn-on even with logic families having weak high-side drive or negative noise margins, unlike conventional BJTs relying on ~0.7 V V_BE.