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Diodes Incorporated DDTB122TU-7-F

Part No.:
DDTB122TU-7-F
Manufacturer:
Diodes Incorporated
Category:
Single, Pre-Biased Bipolar Transistors
Package:
-
Datasheet:
AetrixDDTB122TU-7-F.pdf
Description:
TRANS PREBIAS PNP 200MW SOT323
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,000

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Product details

Overview

DDTB122TU-7-F from Diodes Incorporated is a PNP pre-biased transistor in SOT-323 package, designed for low-voltage switching and digital logic interface applications. It features built-in 220 Ω base-emitter resistor (R1), open collector-emitter path (R2 = OPEN), −40 V VCEO, −500 mA IC, and −0.3 V VCE(sat) at −50 mA/−2.5 mA drive - used in level-shifting circuits for microcontroller GPIO protection.

For engineers reviewing the DDTB122TU-7-F datasheet, DDTB122TU-7-F pinout, DDTB122TU-7-F application, or DDTB122TU-7-F equivalent, key selection criteria include verified R1-only biasing topology, guaranteed VEBO = −5 V, thermal derating compliance per FR4 layout, and compatibility with 3.3 V/5 V logic families driving inductive loads.

Technical Context

This device implements a single PNP bipolar junction transistor with monolithically integrated base-emitter pull-up resistor (R1 = 220 Ω nominal) and no base-collector resistor (R2 = OPEN), enabling direct TTL/CMOS-compatible input control without external bias components. Its −5 V VEBO rating supports safe operation with negative-going input transients.

The SOT-323 package delivers 200 mW power dissipation at TA = 25°C and 625°C/W junction-to-ambient thermal resistance when mounted on FR4 with recommended pad layout. Electrical performance is specified across −55°C to +150°C operating temperature range.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−40 V - maximum allowable collector-emitter voltage before breakdown under open-base condition
IC−500 mA - continuous DC collector current capability with thermal derating above 25°C ambient
VCE(sat)−0.3 V @ −50 mA/−2.5 mA - low saturation voltage ensures minimal power loss in high-side switch configurations
hFE100–600 @ −5 mA/−5 V - wide DC current gain range enables robust switching across varying load conditions
R1220 Ω (nominal) - integrated base-emitter resistor eliminates need for external bias network in digital input stages
fT200 MHz - usable bandwidth supports fast edge transitions in signal routing and pulse-width modulation interfaces

Pinout & Package

SOT-323 surface-mount plastic package (UL 94V-0 rated), 0.006 g weight, moisture sensitivity Level 1, matte tin terminals solderable per MIL-STD-202 Method 208.

Pin/TerminalCircuit RoleDesign Meaning
1 (OUT)CollectorHigh-current output node connected to load; referenced to system ground via emitter
2 (IN)BaseLogic-level input terminal; internally tied to R1 (220 Ω) and open to collector (R2 = OPEN)
3 (GND)EmitterCommon reference terminal; connects to system ground or negative rail in high-side switch topologies

Key Features

FeatureDesign Value
Integrated R1 bias resistor220 Ω enables direct connection to 3.3 V/5 V logic outputs without external components
R2 = OPEN configurationEliminates unintended base-collector leakage paths, improving noise immunity in digital inputs
−5 V VEBO ratingSupports reliable operation with negative-going input spikes common in industrial I/O environments
−0.3 V VCE(sat)Reduces conduction losses in battery-powered or thermally constrained PCB layouts

Applications

Microcontroller GPIO ProtectionLevel-Shifting Interface

Use Scenario: Protecting 3.3 V MCU pins from 5 V or −12 V field-side signals in PLC I/O modules.

IC Role / Device Role / Timing Role: High-side switch isolating MCU from higher-voltage domains while preserving logic polarity.

Use Value: Integrated R1 eliminates discrete resistor placement, reducing BOM count and board area by 25% vs. discrete BJT + bias solution.

Use Scenario: Converting 5 V TTL output to −5 V logic levels for legacy analog front-end ICs.

IC Role / Device Role / Timing Role: Active inverter stage with defined VCE(sat) and hFE ensuring predictable propagation delay & rise/fall times.

Use Value: Guaranteed −0.3 V saturation voltage maintains tight voltage margins required for ±5 V op-amp input clamping.

LED Driver SwitchRelay Coil Control

Use Scenario: Driving common-anode status LEDs from low-voltage microcontrollers in medical diagnostic equipment.

IC Role / Device Role / Timing Role: Constant-current sink switch with stable hFE over temperature ensuring consistent LED brightness.

Use Value: 100–600 hFE range accommodates production variance without requiring gain binning or feedback compensation.

Use Scenario: Energizing 12 V relay coils in automotive body control modules where space limits discrete driver solutions.

IC Role / Device Role / Timing Role: Low-saturation high-side switch interfacing MCU GPIO to inductive load with flyback diode integration.

Use Value: −40 V VCEO rating exceeds typical 12 V automotive load dump transients, eliminating need for external TVS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP pre-biased transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DDTB122JU-7-FR2 = 10 kΩ (vs. OPEN); adds base-collector pull-down for enhanced turn-off speedBetter suited for PWM-driven loads requiring faster fall timeSelect when switching frequency > 10 kHz or EMI reduction is critical
NSV12200MT1GSame R1 = 220 Ω but SOT-23 package; higher PD = 350 mW; VCEO = −50 VHigher power handling and voltage margin for 24 V industrial systemsChoose when thermal headroom or 24 V rail compatibility is required

Compared with DDTB122TU-7-F, DDTB122JU-7-F improves dynamic response at cost of static input impedance, while NSV12200MT1G trades smaller footprint for greater voltage and thermal robustness - both require layout revision due to differing packages and pinouts.

Availability

DDTB122TU-7-F is available at Aetrix Electronics and suitable for industrial I/O modules, automotive body electronics, medical diagnostics equipment, and consumer appliance control boards requiring stable component supply and long-term manufacturability.

Supply support for DDTB122TU-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing facilities in China, Taiwan, and the US.

The DDTB series targets cost-sensitive, space-constrained digital interface applications where integrated biasing reduces component count and improves assembly yield - especially in high-volume consumer and industrial control products.

FAQ

What is the function of the OPEN R2 configuration in DDTB122TU-7-F?

The OPEN R2 means no internal base-collector resistor is present, resulting in higher input impedance and reduced standby current when the base is left floating or driven high. This configuration prevents unintended turn-on during power-up sequences and improves noise rejection in noisy industrial environments where false triggering must be avoided.

Can DDTB122TU-7-F replace a standard PNP BJT like MMBT3906 in existing designs?

Yes, but only if the circuit relies solely on base-emitter biasing and does not require base-collector feedback. DDTB122TU-7-F integrates R1 = 220 Ω, so external base resistors must be removed. Pinout matches SOT-323 MMBT3906 (C-B-E = 1-2-3), but VEBO is lower (−5 V vs. −5 V typical), making it suitable for ≤5 V logic systems.

Is DDTB122TU-7-F compliant with lead-free assembly processes?

Yes - DDTB122TU-7-F uses matte tin-plated terminals and meets JEDEC J-STD-020A Level 1 moisture sensitivity requirements. It is qualified for reflow soldering up to 260°C peak temperature and compatible with standard Pb-free PCB assembly lines without special handling or baking.

How does thermal derating affect DDTB122TU-7-F's maximum current at 85°C ambient?

At TA = 85°C, power dissipation is derated linearly from 200 mW at 25°C using RJA = 625°C/W. This yields PD = 100 mW max, limiting IC to approximately −316 mA at VCE(sat) = −0.3 V. Layout adherence to Diodes' recommended pad dimensions (DS30400 Rev. 2, page 2) is essential to achieve this rating.

DDTB122TU-7-F Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
*
Package/Case:
-
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
-
Current - Collector (Ic) (Max):
-
Voltage - Collector Emitter Breakdown (Max):
-
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Vce Saturation (Max) @ Ib, Ic:
-
Current - Collector Cutoff (Max):
-
Frequency - Transition:
-
Power - Max:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

DDTB122TU-7-F FAQ

1.How can I place an order for DDTB122TU-7-F through Aetrix?

Please submit a Request for Quotation (RFQ) for DDTB122TU-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DDTB122TU-7-F reliable?

The price and inventory of DDTB122TU-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DDTB122TU-7-F is usually 5 days.

3.What payment methods are accepted for DDTB122TU-7-F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DDTB122TU-7-F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DDTB122TU-7-F?

DDTB122TU-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DDTB122TU-7-F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DDTB122TU-7-F?

For technical support, including DDTB122TU-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DDTB122TU-7-F requirements.

6.How does Aetrix verify that DDTB122TU-7-F is sourced from the original manufacturer or authorized distributors?

All DDTB122TU-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DDTB122TU-7-F meets industry standards.

7.What is the process for return or replacement of DDTB122TU-7-F?

All DDTB122TU-7-F units undergo pre-shipment inspection (PSI). If there is an issue with DDTB122TU-7-F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DDTB122TU-7-F part is unused and in its original packaging.

Return procedure for DDTB122TU-7-F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DDTB122TU-7-F Tags

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