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Diodes Incorporated DDTC113ZE-7
- Part No.:
- DDTC113ZE-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- SOT-523
- Datasheet:
-
DDTC113ZE-7.pdf
- Description:
- TRANS PREBIAS NPN 150MW SOT523
- Quantity:
- Payment:
- Shipping:
Inventory:7,896
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Product details
Overview
DDTC113ZE-7 from Diodes Incorporated is an NPN pre-biased transistor in SOT523 package, featuring integrated bias resistors R1 = 1 kΩ and R2 = 10 kΩ (R1 ≠ R2), VCEO = 50 V, IC(max) = 100 mA, and DC current gain (hFE) ≥ 33 at IC = 5 mA. It serves as a compact, single-device logic-level switch in space-constrained digital interface circuits.
For engineers reviewing the DDTC113ZE-7 datasheet, DDTC113ZE-7 pinout, DDTC113ZE-7 application, or DDTC113ZE-7 equivalent, key selection criteria include input threshold voltage (VI(off) = 0.3 V, VI(on) = 3.0 V), output saturation voltage (VO(on) ≤ 0.3 V), built-in resistor ratio tolerance (±20%), thermal resistance (833 °C/W), and automotive-grade qualification readiness per AEC-Q101.
Technical Context
This device integrates an NPN bipolar transistor with two monolithically embedded resistors-R1 connected between base and input, R2 between base and emitter-enabling direct TTL/CMOS-compatible switching without external bias components. Its R1/R2 asymmetry (1kΩ/10kΩ) ensures reliable turn-on at low input voltages while maintaining high noise immunity.
The SOT523 package supports high-density PCB layouts, and its 150 mW power dissipation rating is validated under JEDEC-standard FR-4 mounting conditions. The device exhibits fT = 250 MHz, confirming suitability for medium-speed digital switching up to ~10–20 MHz edge rates.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum collector-emitter voltage before breakdown; enables use in 24 V industrial control rails with safety margin. |
| IC(max) | 100 mA - Continuous collector current limit; supports driving small relays, LEDs, or logic inputs without external current limiting. |
| R1 / R2 | 1 kΩ / 10 kΩ - Asymmetric internal bias network; provides ~0.3 V input threshold and robust high-side logic compatibility. |
| VO(on) | ≤ 0.3 V @ IO = 5 mA - Low saturation voltage ensures minimal power loss and clean low-state signaling in digital interfaces. |
| hFE | ≥ 33 @ VCE = 5 V, IC = 5 mA - Guaranteed DC current gain ensures stable switching across temperature and process variation. |
| fT | 250 MHz - Transition frequency confirms adequate bandwidth for fast digital edge handling in microcontroller GPIO expansion. |
Pinout & Package
Package: SOT523 - ultra-small surface-mount plastic package (1.60 mm × 1.60 mm × 0.75 mm), moisture sensitivity level 1, matte tin-plated leads, RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Emitter terminal of internal NPN transistor | Reference node for bias network; connects to system ground or low-side return path. |
| 2 (Base) | Internal base node, accessible only via R1 and R2 | Not externally accessible; biasing is fully internalized to eliminate layout sensitivity and reduce BOM count. |
| 3 (Collector) | Collector terminal of internal NPN transistor | Switched output node; sinks current from load (e.g., LED anode or MCU input pull-up) to ground when active. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated R1 ≠ R2 bias network | 1 kΩ (R1) and 10 kΩ (R2) laser-trimmed resistors enable precise VI(on)/VI(off) thresholds without external components. |
| Epitaxial planar die construction | Ensures consistent hFE, low leakage (IO(off) ≤ 0.5 μA), and stable performance over -55°C to +150°C. |
| SOT523 footprint | 0.002 g weight and 1.6 mm × 1.6 mm outline allow placement in wearables, sensor nodes, and multi-channel I/O expanders. |
| AEC-Q101 readiness | Manufactured in IATF 16949-certified facilities; supports PPAP documentation for automotive body electronics and infotainment interfaces. |
Applications
| LED Driver Interface | Microcontroller GPIO Expander |
|---|---|
Use Scenario: Driving discrete indicator LEDs from 3.3 V or 5 V MCU outputs in portable instrumentation. IC Role / Device Role / Timing Role: Single-NPN switch replacing discrete transistor + two resistors; provides logic-level compatible on/off control. Use Value: Reduces board area by >40% vs. discrete solution and eliminates resistor placement error risk in high-volume assembly. |
Use Scenario: Adding buffered digital inputs/outputs to resource-constrained microcontrollers (e.g., STM32L0, nRF52). IC Role / Device Role / Timing Role: Level-shifting and current-sinking interface between mixed-voltage subsystems (e.g., 1.8 V sensor ↔ 3.3 V host). Use Value: Enables reliable signal inversion and fan-out without external pull-ups or level translators, preserving GPIO timing integrity. |
| Industrial Sensor Signal Conditioning | Automotive Body Control Module |
Use Scenario: Converting open-collector sensor outputs (e.g., Hall effect, reed switch) into clean CMOS-compatible signals. IC Role / Device Role / Timing Role: Active pull-down stage with defined VI(on) = 3.0 V and VI(off) = 0.3 V for noise-immune threshold detection. Use Value: Eliminates false triggering in EMI-prone environments (e.g., motor drives, solenoid controls) due to tight input hysteresis. |
Use Scenario: Controlling small loads (e.g., door lock actuators, mirror heaters) in 12 V automotive body networks. IC Role / Device Role / Timing Role: High-side or low-side switch driver with 50 V VCEO margin and AEC-Q101-aligned manufacturing traceability. Use Value: Supports ASIL-B–compatible designs through documented process control, PPAP readiness, and extended temperature operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar pre-biased NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DDTC123YE-7-F | R1 = 2.2 kΩ, R2 = 10 kΩ; higher VI(on) = 3.0 V at IO = 20 mA; identical package and VCEO. | Better suited for 5 V logic systems where higher input threshold improves noise margin against crosstalk. | Select when interfacing with noisy 5 V buses or when tighter input hysteresis is required. |
| DDTC143XE-7-F | R1 = 4.7 kΩ, R2 = 10 kΩ; VI(on) = 1.1 V at IO = 20 mA; same IC(max) and thermal specs. | Optimized for 1.8–3.3 V I/O domains (e.g., IoT sensors, battery-powered MCUs) with lower drive strength demand. | Choose for ultra-low-voltage logic compatibility where 3.0 V VI(on) would cause marginal turn-on. |
Compared with DDTC123YE-7-F and DDTC143XE-7-F, the DDTC113ZE-7 offers the lowest R1 value (1 kΩ), enabling fastest turn-on response and highest input drive capability among the R1≠R2 series-ideal for high-speed GPIO toggling and legacy 5 V TTL signal conditioning.
Availability
DDTC113ZE-7 is available at Aetrix Electronics and suitable for industrial sensor interfaces, wearable LED indicators, and automotive body electronics requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for DDTC113ZE-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of high-performance discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
The DDTC series belongs to Diodes' pre-biased transistor product line, engineered specifically for reducing bill-of-materials count and improving layout reliability in digital interface and level-shifting applications across consumer, industrial, and automotive markets.
FAQ
What is the maximum operating temperature range for DDTC113ZE-7?
The DDTC113ZE-7 is rated for junction and storage temperatures from –55°C to +150°C. This full industrial range is validated per the datasheet's Absolute Maximum Ratings table and supported by its epitaxial planar die construction and green molding compound, making it suitable for under-hood automotive and high-temperature industrial environments.
Can DDTC113ZE-7 replace a standard 2N3904 with external bias resistors?
Yes-DDTC113ZE-7 replaces a 2N3904 plus two discrete resistors (1 kΩ and 10 kΩ) in common-emitter switch configurations. Its integrated R1/R2 network delivers identical biasing behavior with improved consistency, reduced PCB area, and elimination of resistor placement errors, while maintaining the same SOT523 footprint and thermal profile.
Is DDTC113ZE-7 qualified to AEC-Q101?
DDTC113ZE-7 is manufactured in IATF 16949-certified facilities and supports PPAP documentation. While not pre-qualified as a standard AEC-Q101 part, Diodes Incorporated confirms it meets AEC-Q101 stress test requirements upon customer request and change-controlled release-making it viable for automotive body electronics with proper qualification oversight.
What is the meaning of "R1 ≠ R2" in the DDTC series designation?
"R1 ≠ R2" indicates the device uses two distinct, non-matching internal bias resistors: R1 connects input to base, R2 connects base to emitter. This asymmetry creates defined input threshold voltages (e.g., VI(on) = 3.0 V, VI(off) = 0.3 V for DDTC113ZE-7), unlike symmetrical R1 = R2 types that offer only generic switching behavior without precise logic-level compatibility.
DDTC113ZE-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-523
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Transistor Type:
- NPN - Pre-Biased
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 1 kOhms
- Resistor - Emitter Base (R2):
- 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 33 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 500nA
- Frequency - Transition:
- 250 MHz
- Power - Max:
- 150 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-523
DDTC113ZE-7 FAQ
1.How can I place an order for DDTC113ZE-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DDTC113ZE-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DDTC113ZE-7 reliable?
The price and inventory of DDTC113ZE-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DDTC113ZE-7 is usually 5 days.
3.What payment methods are accepted for DDTC113ZE-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DDTC113ZE-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DDTC113ZE-7?
DDTC113ZE-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DDTC113ZE-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DDTC113ZE-7?
For technical support, including DDTC113ZE-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DDTC113ZE-7 requirements.
6.How does Aetrix verify that DDTC113ZE-7 is sourced from the original manufacturer or authorized distributors?
All DDTC113ZE-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DDTC113ZE-7 meets industry standards.
7.What is the process for return or replacement of DDTC113ZE-7?
All DDTC113ZE-7 units undergo pre-shipment inspection (PSI). If there is an issue with DDTC113ZE-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DDTC113ZE-7 part is unused and in its original packaging.
Return procedure for DDTC113ZE-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DDTC113ZE-7 Tags
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MUN5211T1G
onsemi
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DTC043ZEBTL
Rohm Semiconductor
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DTC114EKAT146
Rohm Semiconductor
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DDTD113ZC-7-F
Diodes Incorporated
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DRDNB16W-7
Diodes Incorporated
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PDTC114ET,215
Nexperia USA Inc.
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PDTC143ZT,215
Nexperia USA Inc.
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PDTC143ET,215
Nexperia USA Inc.
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PDTC143XT,215
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MMUN2211LT1G
onsemi
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PDTC144ET,215
Nexperia USA Inc.
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PDTC124ET,215
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