Diodes Incorporated DDTC113ZE-7-F
- Part No.:
- DDTC113ZE-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- SOT-523
- Datasheet:
-
DDTC113ZE-7-F.pdf
- Description:
- TRANS PREBIAS NPN 50V SOT523
- Quantity:
- Payment:

- Shipping:

Inventory:3,185
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Product details
Overview
DDTC113ZE-7-F from Diodes Incorporated is an NPN pre-biased transistor in SOT523 package with integrated R1 = 1 kΩ and R2 = 10 kΩ bias resistors (R1 ≠ R2), VI(OFF) = 0.3 V, VI(ON) = 3.0 V (at IO = 20 mA), VO(ON) ≤ 0.3 V, and IOUT = 100 mA - used for digital logic-level switching in space-constrained load control circuits.
For engineers reviewing the DDTC113ZE-7-F datasheet, DDTC113ZE-7-F pinout, DDTC113ZE-7-F application, or DDTC113ZE-7-F equivalent, key selection criteria include input threshold voltage compatibility with 3.3 V/5 V microcontrollers, guaranteed saturation at low drive current, built-in resistor ratio stability, and SOT523 thermal performance under pulsed load conditions.
Technical Context
This device integrates a monolithic NPN transistor with two discrete on-die bias resistors (R1 = 1 kΩ, R2 = 10 kΩ) configured as a single-input inverter circuit, enabling direct interface with CMOS/TTL logic without external base resistors. Its R1 ≠ R2 topology ensures predictable turn-on behavior and stable DC current gain (GI = 33 min at IO = 5 mA).
Designed for low-power digital switching, it operates with VCC up to 50 V, supports IO(off) leakage < 0.5 μA at 50 V, and delivers fT = 250 MHz - confirming suitability for high-speed signal routing in portable and automotive body-control modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VI(OFF) | 0.3 V - Ensures reliable cutoff when driven by 0 V or near-ground logic outputs. |
| VI(ON) | 3.0 V @ IO = 20 mA - Guarantees full saturation with standard 3.3 V GPIO without additional level-shifting. |
| VO(ON) | ≤ 0.3 V - Minimizes power loss and heat generation during active switching in battery-powered loads. |
| IOUT | 100 mA - Supports driving small relays, LEDs, or MOSFET gates directly from MCU pins. |
| GI (DC Current Gain) | 33 min @ IO = 5 mA - Provides consistent switching margin across temperature and process variation. |
| fT | 250 MHz - Validates capability for clean edge response in <100 ns pulse applications. |
| PD | 150 mW - Matches thermal limits of SOT523 on FR-4 PCB with minimal copper area. |
Pinout & Package
Package: SOT523 - ultra-small surface-mount plastic package (1.60 × 1.60 × 0.75 mm), moisture sensitivity level 1, matte tin-plated leads, weight ≈ 0.002 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Input reference node for bias network | Connected internally to R2; sets common return path for base current and output current. |
| 2 (Base) | Signal input node | Accepts logic-level voltage; internal connection point between R1 and R2 junction. |
| 3 (Collector) | Switched output terminal | Drives load to VCC; open-collector compatible with pull-up configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated R1/R2 bias network | R1 = 1 kΩ, R2 = 10 kΩ (±30% R1 tolerance, ±20% R2/R1 ratio) - eliminates 2 external resistors and layout error risk. |
| Guaranteed logic-compatible thresholds | VI(OFF) ≤ 0.3 V and VI(ON) ≥ 3.0 V - ensures interoperability with 3.3 V and 5 V digital families without ambiguity. |
| SOT523 footprint | 1.60 × 1.60 mm outline with 0.5 mm pitch - enables high-density placement in wearables and compact sensor nodes. |
| AEC-Q101 readiness | Manufactured in IATF 16949 certified facilities; PPAP-capable - supports automotive body electronics qualification paths. |
Applications
| LED Driver Circuit | Microcontroller GPIO Expander |
|---|---|
Use Scenario: Driving indicator LEDs from low-current MCU I/O pins in handheld medical devices. IC Role / Device Role / Timing Role: Digital switch translating 3.3 V logic to 20 mA LED current path. Use Value: Eliminates need for discrete base resistor and reduces BOM count while maintaining <0.3 V saturation drop for efficient LED brightness control. |
Use Scenario: Adding extra digital outputs to resource-limited 8-bit microcontrollers in industrial sensors. IC Role / Device Role / Timing Role: Level-translating buffer for expanding active-low enable signals to peripheral ICs. Use Value: Enables direct connection to 3.3 V GPIO with guaranteed turn-on at 3.0 V, reducing firmware overhead for software-driven port expansion. |
| Automotive Door Module | USB-C Port Power Switch |
Use Scenario: Controlling interior lamp dimming and window switch feedback in Class A vehicle cabin modules. IC Role / Device Role / Timing Role: Low-side load switch for 12 V accessory circuits with ESD-hardened inputs. Use Value: Delivers 100 mA continuous current with <0.3 V VCE(sat), minimizing self-heating in sealed enclosures per AEC-Q101 thermal requirements. |
Use Scenario: Enabling/disabling VBUS power path in USB-C receptacles based on CC line detection logic. IC Role / Device Role / Timing Role: Fast-response digital gate driver for external load switch FETs. Use Value: 250 MHz fT supports clean 100 ns switching transitions required for USB PD communication timing integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN pre-biased transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DDTC123YE-7-F | R1 = 2.2 kΩ, R2 = 10 kΩ; VI(ON) = 3.0 V @ IO = 20 mA but higher input impedance reduces drive current demand. | Better suited for 5 V logic systems where lower base current minimizes MCU loading. | Select when interfacing with older 5 V microcontrollers or when optimizing for lowest possible input current. |
| DDTC143XE-7-F | R1 = 4.7 kΩ, R2 = 10 kΩ; VI(ON) = 1.1 V @ IO = 20 mA - lower threshold enables use with 1.8 V logic families. | Enables direct interface with ultra-low-voltage MCUs (e.g., ARM Cortex-M0+ at 1.8 V supply) without level shifters. | Choose for next-generation battery-powered IoT nodes requiring sub-2 V input compatibility. |
Compared with DDTC123YE-7-F and DDTC143XE-7-F, the DDTC113ZE-7-F offers the lowest input resistance (1 kΩ), delivering highest base drive for robust saturation in noisy environments - ideal where margin against marginal logic levels is critical.
Availability
DDTC113ZE-7-F is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO expansion, and automotive door module designs requiring stable component supply and long-term production continuity.
Supply support for DDTC113ZE-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This part belongs to the DDTC (R1≠R2 Series) pre-biased transistor family, engineered specifically for eliminating external bias components in digital switching applications while maintaining precise input threshold control and thermal reliability in miniaturized packages.
FAQ
What is the maximum continuous collector current rating for DDTC113ZE-7-F?
The absolute maximum rated output current is 100 mA, verified per datasheet DS30314 Rev.10–2 Section "Absolute Maximum Ratings". This value applies at TA = +25°C with proper PCB thermal relief; derating is required above 25°C per the published derating curve (1.5 mW/°C above 25°C).
Does DDTC113ZE-7-F require external base resistors?
No - it integrates R1 = 1 kΩ and R2 = 10 kΩ on-die bias resistors in a fixed R1 ≠ R2 configuration, forming a complete inverter circuit. No external resistors are needed for standard logic-level switching, confirmed by the schematic and test conditions in the Electrical Characteristics table.
Is DDTC113ZE-7-F qualified for automotive applications?
While not pre-qualified to AEC-Q101 in this specific marking, it is manufactured in IATF 16949 certified facilities and supports PPAP documentation. Diodes states that automotive-grade versions are available upon request - contact Diodes or Aetrix for change-controlled AEC-Q101 qualified variants.
What is the meaning of the 'N02' top-side marking on DDTC113ZE-7-F?
'N02' is the product type and date code marking per Diodes' specification: 'N' indicates year 2025, '02' denotes February 2025 production. This matches the Date Code Key in DS30314 Rev.10–2 page 3 and confirms traceability to manufacturing lot and cycle.
DDTC113ZE-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-523
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN - Pre-Biased
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 1 kOhms
- Resistor - Emitter Base (R2):
- 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 33 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 500nA
- Frequency - Transition:
- 250 MHz
- Power - Max:
- 150 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-523
DDTC113ZE-7-F FAQ
1.How can I place an order for DDTC113ZE-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for DDTC113ZE-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DDTC113ZE-7-F reliable?
The price and inventory of DDTC113ZE-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DDTC113ZE-7-F is usually 5 days.
3.What payment methods are accepted for DDTC113ZE-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DDTC113ZE-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DDTC113ZE-7-F?
DDTC113ZE-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DDTC113ZE-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DDTC113ZE-7-F?
For technical support, including DDTC113ZE-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DDTC113ZE-7-F requirements.
6.How does Aetrix verify that DDTC113ZE-7-F is sourced from the original manufacturer or authorized distributors?
All DDTC113ZE-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DDTC113ZE-7-F meets industry standards.
7.What is the process for return or replacement of DDTC113ZE-7-F?
All DDTC113ZE-7-F units undergo pre-shipment inspection (PSI). If there is an issue with DDTC113ZE-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DDTC113ZE-7-F part is unused and in its original packaging.
Return procedure for DDTC113ZE-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DDTC113ZE-7-F Tags

-
MUN5211T1G
onsemi

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DTC043ZEBTL
Rohm Semiconductor

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DTC114EKAT146
Rohm Semiconductor

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DDTD113ZC-7-F
Diodes Incorporated

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DRDNB16W-7
Diodes Incorporated

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PDTC114ET,215
Nexperia USA Inc.

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PDTC143ZT,215
Nexperia USA Inc.

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PDTC143ET,215
Nexperia USA Inc.

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PDTC143XT,215
Nexperia USA Inc.

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MMUN2211LT1G
onsemi

-
PDTC144ET,215
Nexperia USA Inc.

-
PDTC124ET,215
Nexperia USA Inc.
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