Diodes Incorporated DDTC114YE-7-F
- Part No.:
- DDTC114YE-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- SOT-523
- Datasheet:
-
DDTC114YE-7-F.pdf
- Description:
- TRANS PREBIAS NPN 50V SOT523
- Quantity:
- Payment:

- Shipping:

Inventory:5,058
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Product details
Overview
DDTC114YE-7-F from Diodes Incorporated is an NPN pre-biased transistor in SOT523 package with integrated R1 = 10 kΩ and R2 = 47 kΩ bias resistors (R1 ≠ R2), VCEO = 50 V, IC(max) = 100 mA, and DC current gain (hFE) ≥ 68 at IC = 5 mA. It functions as a single-stage digital switch in low-power logic interface circuits, such as microcontroller GPIO driver stages for LED indicators or small-signal relay control.
For engineers reviewing the DDTC114YE-7-F datasheet, DDTC114YE-7-F pinout, DDTC114YE-7-F application, or DDTC114YE-7-F equivalent, this page delivers verified electrical parameters, validated SOT523 terminal mapping, real-world switching use cases, and two confirmed alternative parts with documented functional differences - all derived from Diodes' official DS30314 Rev.10-2 datasheet.
Technical Context
This device integrates an NPN bipolar transistor with asymmetric internal base biasing (R1 = 10 kΩ, R2 = 47 kΩ), enabling reliable saturation at low input drive levels (VI(on) = 1.3 V @ IO = 1 mA) while maintaining high off-state immunity (VI(off) = 0.3 V @ IO = 100 μA). Its 150 mW power dissipation and 833 °C/W thermal resistance are specified for FR-4 PCB mounting with minimum pad layout.
The transistor exhibits fT = 250 MHz (VCE = 10 V, IE = 5 mA), confirming suitability for medium-speed digital switching up to ~10–20 MHz edge rates. Output voltage drop is tightly controlled: VO(on) ≤ 0.3 V @ IO = 10 mA / IL = 0.5 mA, supporting rail-to-rail logic-level translation in 3.3 V and 5 V systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum collector-emitter voltage before breakdown; supports 3.3 V/5 V/12 V logic interfacing with margin. |
| IC(max) | 100 mA - Absolute maximum continuous collector current; enables driving LEDs, small relays, or logic gates. |
| R1 / R2 | 10 kΩ / 47 kΩ - Asymmetric bias network ensures stable turn-on at low VI and fast turn-off; eliminates external resistor selection. |
| VO(on) | ≤ 0.3 V @ IO = 10 mA - Low saturated output voltage minimizes power loss and ensures clean low-level signaling to downstream CMOS inputs. |
| hFE | ≥ 68 @ IC = 5 mA - Guaranteed DC current gain ensures predictable switching behavior across temperature and process variation. |
| fT | 250 MHz - Transition frequency confirms adequate bandwidth for digital signal edges up to ~20 MHz without significant rise-time degradation. |
| PD | 150 mW - Power rating defined on standard FR-4 board; sets practical limit for continuous duty-cycle operation. |
Pinout & Package
Package: SOT523 - ultra-small surface-mount plastic package (1.60 mm × 1.60 mm × 0.75 mm), halogen- and antimony-free, RoHS-compliant, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Emitter connection | Reference node for bias network; tied internally to R2; must be connected to system ground or low-side return path. |
| 2 (Base) | Input node | Connected to junction of R1 and R2; accepts TTL/CMOS-compatible logic input; no external base resistor required. |
| 3 (Collector) | Output node | Switched high-side output; sinks load current when active; compatible with open-collector or pull-up configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetric R1/R2 bias network | 10 kΩ / 47 kΩ ratio enables precise VI(on)/VI(off) thresholds (1.3 V / 0.3 V), reducing false triggering in noisy environments. |
| Epitaxial planar die construction | Ensures consistent hFE and VBE across production lots, critical for batch-sensitive industrial control designs. |
| SOT523 footprint | 0.002 g weight and 1.6 mm × 1.6 mm body allow dense placement in space-constrained IoT sensor nodes and wearables. |
| Lead-free & green compliance | Meets RoHS 3 (2015/863/EU), <900 ppm Br+Cl, <1000 ppm Sb - satisfies automotive Tier-1 and medical OEM environmental requirements. |
Applications
| LED Indicator Driver | Microcontroller GPIO Expander |
|---|---|
|
Use Scenario: Driving discrete status LEDs from 3.3 V MCU outputs with limited sink/source capability. IC Role / Device Role: Single-NPN digital switch that translates weak GPIO signals into full-current LED drive paths. Use Value: Eliminates need for external base resistor and reduces BOM count; VO(on) ≤ 0.3 V ensures >90% LED forward voltage utilization. |
Use Scenario: Adding extra low-speed digital outputs to resource-constrained MCUs (e.g., Cortex-M0+, PIC16F). IC Role / Device Role: Level-shifting buffer between MCU I/O and higher-voltage peripherals (e.g., 5 V sensors, legacy UART lines). Use Value: R1/R2 values guarantee VI(on) = 1.3 V, compatible with 3.3 V LVTTL; 100 mA IC supports multiple parallel loads. |
| Small-Signal Relay Control | Logic-Level Translation |
|
Use Scenario: Activating 5 V/12 V reed relays or solid-state relays in home automation hubs. IC Role / Device Role: Interface transistor providing galvanic isolation between low-voltage control logic and relay coil circuitry. Use Value: 50 V VCEO safely handles relay coil flyback transients; 150 mW PD allows continuous 100 mA drive at ambient ≤ 85°C. |
Use Scenario: Bidirectional voltage translation between 1.8 V FPGA I/O banks and 3.3 V peripheral interfaces. IC Role / Device Role: Active pull-down stage enabling open-drain compatibility and bus arbitration in mixed-voltage systems. Use Value: Asymmetric R1/R2 yields sharp VI threshold (1.3 V), minimizing metastability during 1.8 V → 3.3 V level transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN pre-biased transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DDTC114WE-7-F | R1 = 10 kΩ, R2 = 4.7 kΩ (R2/R1 = 0.47 vs. 4.7 for DDTC114YE); lower VI(on) = 0.8 V @ IO = 2 mA | Better suited for 1.8 V logic drive; less noise margin in 3.3 V systems due to reduced VI(off) headroom | Select when interfacing with sub-2 V controllers; avoid where EMI immunity is critical. |
| DDTC124XE-7-F | R1 = 22 kΩ, R2 = 47 kΩ (R2/R1 ≈ 2.1); higher VI(on) = 1.4 V @ IO = 2 mA; hFE ≥ 68 but rated IOUT = 50 mA | Optimized for higher-noise industrial environments; lower max output current limits relay/LED drive capability | Prefer in factory-floor PLC I/O modules where robustness outweighs current demand. |
Compared with DDTC114WE-7-F and DDTC124XE-7-F, DDTC114YE-7-F uniquely balances 1.3 V VI(on) threshold, 100 mA IC, and 47 kΩ R2 for optimal noise margin and drive strength in mainstream 3.3 V embedded control applications.
Availability
DDTC114YE-7-F is available at Aetrix Electronics and suitable for LED indicator circuits, microcontroller GPIO expansion, and small-signal relay control requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for DDTC114YE-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This part belongs to Diodes' DDTC (R1≠R2 Series) pre-biased transistor family, engineered specifically for simplified digital switching in space- and cost-constrained applications where external bias resistors must be eliminated without sacrificing noise immunity or gain stability.
FAQ
What is the maximum operating temperature for DDTC114YE-7-F?
The device is rated for junction and storage temperatures from –55 °C to +150 °C. Its thermal resistance (RθJA = 833 °C/W) assumes mounting on FR-4 with Diodes' recommended pad layout; derating begins above +85 °C ambient per Figure 1 in DS30314 Rev.10-2.
Can DDTC114YE-7-F replace a standard 2N3904 with external resistors?
Yes - it replaces a 2N3904 plus two discrete bias resistors (10 kΩ and 47 kΩ) in common-emitter switch configurations. Unlike discrete solutions, it guarantees matched R1/R2 tolerance (±30 % R1, ±20 % R2/R1), eliminating drift-related timing shifts across temperature and voltage.
Is DDTC114YE-7-F qualified for automotive applications?
It is not AEC-Q101 qualified by default. Diodes offers automotive-grade variants under separate part numbers (e.g., with suffix -Q); this part is intended for industrial, consumer, and computing applications. For automotive use, contact Diodes directly for PPAP-capable, IATF 16949-manufactured alternatives.
What does the marking "N14" indicate on the SOT523 package?
"N14" is the top-side product type code per DS30314: "N" denotes the DDTC (R1≠R2) series, and "14" identifies the specific R1/R2 combination (10 kΩ / 47 kΩ). The date code follows separately (e.g., "M2" = March 2025) per the document's Date Code Key table.
DDTC114YE-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-523
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN - Pre-Biased
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 10 kOhms
- Resistor - Emitter Base (R2):
- 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max):
- 500nA
- Frequency - Transition:
- 250 MHz
- Power - Max:
- 150 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-523
DDTC114YE-7-F FAQ
1.How can I place an order for DDTC114YE-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for DDTC114YE-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DDTC114YE-7-F reliable?
The price and inventory of DDTC114YE-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DDTC114YE-7-F is usually 5 days.
3.What payment methods are accepted for DDTC114YE-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DDTC114YE-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DDTC114YE-7-F?
DDTC114YE-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DDTC114YE-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DDTC114YE-7-F?
For technical support, including DDTC114YE-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DDTC114YE-7-F requirements.
6.How does Aetrix verify that DDTC114YE-7-F is sourced from the original manufacturer or authorized distributors?
All DDTC114YE-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DDTC114YE-7-F meets industry standards.
7.What is the process for return or replacement of DDTC114YE-7-F?
All DDTC114YE-7-F units undergo pre-shipment inspection (PSI). If there is an issue with DDTC114YE-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DDTC114YE-7-F part is unused and in its original packaging.
Return procedure for DDTC114YE-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DDTC114YE-7-F Tags

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MUN5211T1G
onsemi

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DTC043ZEBTL
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DTC114EKAT146
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MMUN2211LT1G
onsemi

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