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Diodes Incorporated DDTC123JE-7
- Part No.:
- DDTC123JE-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- SOT-523
- Datasheet:
-
DDTC123JE-7.pdf
- Description:
- TRANS PREBIAS NPN 150MW SOT523
- Quantity:
- Payment:
- Shipping:
Inventory:615
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Product details
Overview
DDTC123JE-7 from Diodes Incorporated is an NPN pre-biased transistor in SOT523 package with integrated R1 = 2.2 kΩ and R2 = 47 kΩ bias resistors, VI(OFF) = 0.5 V, VI(ON) = 3.0 V (at IO = 5 mA), and DC current gain GI = 80 - used for digital logic interface and low-power switching in space-constrained consumer and industrial control circuits.
For engineers reviewing the DDTC123JE-7 datasheet, DDTC123JE-7 pinout, DDTC123JE-7 application, or DDTC123JE-7 equivalent, this page delivers verified electrical parameters, confirmed SOT523 terminal mapping, real-world use cases in level-shifting and load driving, and validated alternative parts with documented R1/R2 and gain differences.
Technical Context
This device integrates a monolithic NPN transistor with two non-matching on-chip resistors (R1 ≠ R2) to enable direct TTL/CMOS-compatible input drive without external biasing. Its 0.5 V turn-off threshold and 3.0 V turn-on voltage support clean digital signal translation at 3.3 V and 5 V logic levels.
The 80× DC current gain at 10 mA output current and 250 MHz transition frequency (fT) confirm suitability for medium-speed switching up to ~10 MHz, while the 150 mW power dissipation rating and 833 °C/W thermal resistance require minimal PCB copper area in low-duty-cycle applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| R1 (Nominal) | 2.2 kΩ - sets base current for defined saturation under standard logic-high input |
| R2 (Nominal) | 47 kΩ - provides stable base-emitter shunt path to ensure reliable cutoff during logic-low input |
| VI(OFF) | 0.5 V - guarantees transistor remains fully off when driven by sub-0.7 V logic outputs (e.g., low-voltage MCUs) |
| VI(ON) | 3.0 V @ IO = 5 mA - ensures robust turn-on with margin above 2.7 V logic-high thresholds |
| GI (hFE) | 80 @ VCE = 5 V, IC = 10 mA - supports ≥5 mA output drive with ≤62.5 µA required base current |
| fT | 250 MHz - enables use in pulse-width modulation (PWM) signals up to ~10 MHz with minimal rise/fall degradation |
| PD | 150 mW - limits continuous output current to ≤100 mA at ambient temperature with standard FR-4 layout |
Pinout & Package
Package: SOT523 - ultra-small surface-mount plastic package (1.60 × 1.60 × 0.75 mm), moisture sensitivity level 1, matte tin-plated leads, weight ≈ 0.002 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Output reference node | Connected to ground or low-side load return; defines common reference for output current sink |
| 2 (Base) | Bias input node | Internally connected to R1 and R2 junction; accepts logic-level input to control transistor conduction |
| 3 (Collector) | Switched output node | Sinks up to 100 mA to load; connects to VCC rail via external load (e.g., LED, relay coil) |
Key Features
| Feature | Design Value |
|---|---|
| Integrated R1 ≠ R2 bias network | Eliminates need for two external resistors - reduces BOM count and PCB footprint in discrete logic interface designs |
| Guaranteed VI(OFF) ≤ 0.5 V | Ensures full cutoff with weak-drive sources (e.g., open-drain GPIO, low-IOH microcontrollers) |
| 80× DC current gain (GI) | Enables 5 mA output current with only 62.5 µA base drive - lowers input loading on driving ICs |
| SOT523 package | 0.75 mm height and 1.6 mm² footprint - fits high-density layouts where QFN or SC-70 are too tall or wide |
| AEC-Q101 qualified option available | Same die and R1/R2 values offered in automotive-grade variant (DDTC123JE-7Q) for under-hood sensor interfaces |
Applications
| LED Indicator Driver | Microcontroller GPIO Expander |
|---|---|
Use Scenario: Driving single-color status LEDs from 3.3 V MCU GPIO pins with limited sink current capability. IC Role / Device Role / Timing Role: NPN switch sinking current from LED anode to ground; replaces discrete transistor + two resistors. Use Value: Enables 5 mA LED brightness using only 62.5 µA GPIO drive - preserves MCU I/O budget and eliminates resistor placement error risk. |
Use Scenario: Adding extra low-side switch outputs to resource-constrained microcontrollers (e.g., ARM Cortex-M0+ with <10 GPIOs). IC Role / Device Role / Timing Role: Logic-level translator and current amplifier - converts weak MCU output into robust 100 mA capable switch node. Use Value: Supports fast PWM dimming (≤10 MHz) with consistent 0.3 V saturation voltage - maintains LED linearity across duty cycles. |
| Level-Shifting Interface | Low-Power Sensor Enable Switch |
Use Scenario: Interfacing 1.8 V logic outputs to 5 V peripheral enable inputs requiring >2 mA pull-down. IC Role / Device Role / Timing Role: Voltage-threshold translator - turns on only when input exceeds 3.0 V, rejecting noise below 0.5 V. Use Value: Provides 100% noise immunity against 1.8 V rail fluctuations while delivering 5 mA sink current at 5 V - no false triggering. |
Use Scenario: Enabling power to analog sensors (e.g., temperature, humidity) only during active measurement cycles. IC Role / Device Role / Timing Role: Low-quiescent-load power gate - draws <0.5 µA when off and switches 20 mA sensor supply within 100 ns. Use Value: Reduces system standby current by >95% compared to always-on biasing - extends battery life in portable IoT nodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN pre-biased transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DDTC123YE-7 | R1 = 2.2 kΩ, R2 = 10 kΩ; VI(ON) = 3.0 V but lower GI = 33 | Higher base current demand (≈180 µA for 5 mA IO) - less suitable for weak-drive MCUs | Select when higher R2 improves noise immunity in electrically noisy environments, accepting reduced gain |
| DDTC143XE-7 | R1 = 4.7 kΩ, R2 = 10 kΩ; VI(ON) = 3.0 V, GI = 30, IO(max) = 100 mA | Higher input impedance (lower base current) but lower gain - better for high-impedance logic sources | Prefer for 5 V-only systems with CMOS drivers; avoid where 3.3 V logic margins are tight |
Compared with DDTC123YE-7 and DDTC143XE-7, DDTC123JE-7 delivers optimal balance of low-turn-on voltage, high gain, and matched R1/R2 ratio - making it the preferred choice for mixed-voltage (3.3 V/5 V) embedded control where both drive strength and noise rejection matter.
Availability
DDTC123JE-7 is available at Aetrix Electronics and suitable for LED indicator driving, microcontroller GPIO expansion, level-shifting interfaces, and low-power sensor enable switching requiring stable component supply and guaranteed RoHS/Green compliance.
Supply support for DDTC123JE-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, energy-efficient components for industrial, computing, and automotive markets.
This part belongs to the DDTC (R1≠R2 Series) pre-biased transistor family - engineered specifically to replace dual-resistor NPN configurations in compact digital interface and power-switching applications.
FAQ
What is the maximum continuous collector current for DDTC123JE-7?
The absolute maximum rated output current is 100 mA per the datasheet's Absolute Maximum Ratings table. However, sustained operation above 50 mA requires derating based on ambient temperature and PCB copper area - at 25°C with minimum pad layout, 100 mA is permissible only in pulsed mode (duty cycle ≤10%).
Can DDTC123JE-7 be used with 1.8 V logic inputs?
No - its VI(ON) is specified at 3.0 V (with 5 mA output), and VI(OFF) is 0.5 V. A 1.8 V input falls between these thresholds and will result in partial conduction or unpredictable switching behavior; use DDTC114WE-7 (VI(ON) = 1.3 V) instead for 1.8 V compatibility.
Is the SOT523 package lead-free and RoHS compliant?
Yes - DDTC123JE-7 is fully lead-free and RoHS 3 compliant (2015/863/EU), with halogen- and antimony-free "Green" molding compound meeting UL 94V-0 flammability rating and J-STD-020 moisture sensitivity level 1.
How does the R1 ≠ R2 configuration improve performance over R1 = R2 types?
The asymmetric resistors provide independent optimization: R1 sets precise base current for saturation, while R2 ensures rapid, complete cutoff by shunting leakage and stray capacitance - resulting in sharper switching edges, lower standby current (<0.5 µA), and immunity to floating-input misfires not achievable with symmetric bias networks.
DDTC123JE-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-523
- Packaging:
- Cut Tape (CT)
- Product Status:
- Active
- Transistor Type:
- NPN - Pre-Biased
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 2.2 kOhms
- Resistor - Emitter Base (R2):
- 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max):
- 500nA
- Frequency - Transition:
- 250 MHz
- Power - Max:
- 150 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-523
DDTC123JE-7 FAQ
1.How can I place an order for DDTC123JE-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DDTC123JE-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DDTC123JE-7 reliable?
The price and inventory of DDTC123JE-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DDTC123JE-7 is usually 5 days.
3.What payment methods are accepted for DDTC123JE-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DDTC123JE-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DDTC123JE-7?
DDTC123JE-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DDTC123JE-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DDTC123JE-7?
For technical support, including DDTC123JE-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DDTC123JE-7 requirements.
6.How does Aetrix verify that DDTC123JE-7 is sourced from the original manufacturer or authorized distributors?
All DDTC123JE-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DDTC123JE-7 meets industry standards.
7.What is the process for return or replacement of DDTC123JE-7?
All DDTC123JE-7 units undergo pre-shipment inspection (PSI). If there is an issue with DDTC123JE-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DDTC123JE-7 part is unused and in its original packaging.
Return procedure for DDTC123JE-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DDTC123JE-7 Tags
-
MUN5211T1G
onsemi
-
DTC043ZEBTL
Rohm Semiconductor
-
DTC114EKAT146
Rohm Semiconductor
-
DDTD113ZC-7-F
Diodes Incorporated
-
DRDNB16W-7
Diodes Incorporated
-
PDTC114ET,215
Nexperia USA Inc.
-
PDTC143ZT,215
Nexperia USA Inc.
-
PDTC143ET,215
Nexperia USA Inc.
-
PDTC143XT,215
Nexperia USA Inc.
-
MMUN2211LT1G
onsemi
-
PDTC144ET,215
Nexperia USA Inc.
-
PDTC124ET,215
Nexperia USA Inc.
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