Renesas DF2145BVTE10V

Overview

DF2145BVTE10V from Renesas Electronics is a 16-bit H8S/2145B microcontroller featuring a 32-bit internal CPU architecture, 256 KB on-chip Flash ROM (F-ZTAT™), and 8 KB RAM. It integrates an 8-bit PWM timer, 14-bit PWMX timer, 16-bit free-running timer, 10-bit A/D converter, 8-bit D/A converter, SCI, I²C bus interface, keyboard buffer controller, and X-bus/LPC host interfaces - deployed in industrial control and embedded instrumentation systems.

For engineers reviewing the DF2145BVTE10V datasheet, DF2145BVTE10V pinout, DF2145BVTE10V application, or DF2145BVTE10V equivalent, key selection criteria include its 256 KB reprogrammable Flash memory, 8 KB RAM capacity, support for X-bus and SCI peripherals, absence of LPC interface in this 5-V variant, and QFP-100 package with defined NC pin handling per Renesas hardware manual Rev. 3.00.

Technical Context

The DF2145BVTE10V implements the H8S/2000 CPU core with sixteen 16-bit general-purpose registers and a 16-Mbyte linear address space. Its on-chip peripheral set includes a data transfer controller (DTC) operating as a bus master, watchdog timer (WDT), and dual PWM subsystems (8-bit and 14-bit) enabling precise motor control and power regulation.

This device operates at 5 V and belongs to the H8S/2145B subgroup where LPC and WUE pin functions are explicitly excluded - confirmed across multiple sections of the Hardware Manual Rev. 3.00 (pp. vii, xi, xii). Its memory map allocates RAM from H'D080–H'EFFF and H'FF00–H'FF7F, distinct from lower-memory variants like the H8S/2140B.

Key Specifications

Pinout & Package

DF2145BVTE10V is housed in a 100-pin plastic quad flat package (QFP) measuring 14.0 × 14.0 mm, with 0.65 mm lead pitch. NC pins must remain unconnected per Renesas General Precautions (p. iii); unused CMOS inputs require fixed high/low biasing to prevent noise-induced malfunction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar microcontroller applications.

Compared with HD64F2140BV and HD64F2141BV, DF2145BVTE10V delivers double the RAM and 2×–4× more Flash - enabling larger real-time firmware, extended data logging, and higher-resolution PWM control without external memory or logic.

Availability

DF2145BVTE10V is available at Aetrix Electronics and suitable for industrial PLC I/O modules, embedded test instrumentation, motor drive feedback units, and legacy system emulators requiring stable component supply and long-term lifecycle support.

Supply support for DF2145BVTE10V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The H8S/2145B group - including DF2145BVTE10V - was designed for cost-effective, high-integration embedded control in industrial automation, test equipment, and motor drive applications where Flash reprogrammability and mixed-signal capability are critical.

FAQ

What is the maximum operating frequency of the DF2145BVTE10V?

The DF2145BVTE10V operates with a maximum system clock frequency of 25 MHz when driven by an external crystal or oscillator connected to the EXTAL/CLK pins. This frequency governs instruction execution speed, peripheral timing, and A/D conversion rates - all specified under 5-V supply conditions in the H8S/2140B Group Hardware Manual Rev. 3.00. DF2145BVTE10V performance remains consistent across its qualified temperature range.

Does the DF2145BVTE10V support the LPC interface?

No, the DF2145BVTE10V does not support the LPC interface. The H8S/2145B (5-V version) explicitly excludes LPC functionality, as confirmed in multiple sections of the Hardware Manual Rev. 3.00 - including revision notes on page vii and pin function tables on pages xi and xii. DF2145BVTE10V relies on the X-bus interface for host peripheral expansion instead.

How much user-accessible RAM does the DF2145BVTE10V provide?

The DF2145BVTE10V provides 8 KB of on-chip SRAM, mapped to two non-contiguous address regions: H'D080–H'EFFF (8 KB minus 2 KB reserved) and H'FF00–H'FF7F (128 bytes). This allocation differs from lower-memory variants like the H8S/2140B and supports larger data buffers and stack depth for real-time multitasking. DF2145BVTE10V RAM is fully accessible without bank switching.

What packaging and lead finish does the DF2145BVTE10V use?

The DF2145BVTE10V uses a 100-pin plastic quad flat package (QFP) with 14.0 × 14.0 mm body dimensions and 0.65 mm lead pitch. Its lead finish is matte tin, compliant with JEDEC J-STD-020 moisture sensitivity level 3 requirements. The "TE10V" suffix denotes this specific tape-and-reel packaging configuration for automated assembly. DF2145BVTE10V adheres to RoHS Directive 2011/65/EU.

Is the DF2145BVTE10V pin-compatible with other H8S/214x series MCUs?

DF2145BVTE10V shares the same 100-pin QFP footprint and core pin assignments (power, reset, clock, I/O ports) with other H8S/214x devices such as HD64F2140BV and HD64F2141BV. However, functional pin differences exist - notably the absence of LPC-related pins (e.g., P80–P83) and WUE signals in DF2145BVTE10V. Full hardware compatibility requires verification against the specific variant's pin function table in the Hardware Manual Rev. 3.00.