Renesas DF2329EVTE25V

Overview

DF2329EVTE25V from Renesas Electronics is a 16-bit single-chip microcomputer in the H8S/2329 Group, featuring an H8S/2000 CPU core, 512 KB on-chip F-ZTAT™ flash memory, 32 KB RAM, and integrated peripherals including TPU, SCI, A/D and D/A converters, DMA controller, and watchdog timer. It operates at up to 25 MHz and targets embedded control systems requiring reprogrammable firmware and deterministic real-time response.

For engineers reviewing the DF2329EVTE25V datasheet, DF2329EVTE25V pinout, DF2329EVTE25V application, or DF2329EVTE25V equivalent, key selection considerations include its 128-pin FP-128B package, ROM-enabled expansion mode support, 100-cycle flash endurance, asynchronous SCI bit rates up to 38.4 kbps at ±1.73% error, and compatibility with H8S development tools and C/C++ toolchains.

Technical Context

The DF2329EVTE25V implements the H8S/2000 32-bit internal architecture with 16-bit external data bus, supporting multiple operating modes (Modes 2–7) selected via MD0–MD2 pins. Its system control includes a bus controller with seven chip select outputs (CS0–CS7), programmable wait-state generation, and ROM-disabled or ROM-enabled expansion configurations.

Peripheral integration includes a 16-bit Timer Pulse Unit (TPU) with eight channels, a 10-bit A/D converter with 16 input channels and 1.6 µs conversion time, a 8-bit D/A converter, two full-duplex SCIs with selectable baud rates, and a data transfer controller (DTC) supporting memory-to-peripheral and peripheral-to-memory transfers without CPU intervention.

Key Specifications

Pinout & Package

DF2329EVTE25V is housed in the FP-128B package - a 128-pin fine-pitch plastic BGA with 0.8 mm ball pitch and 14 mm × 14 mm body size, optimized for compact industrial control modules and thermally constrained applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 16-bit microcontroller applications.

Compared with DF2329EVTE25V, HD64F2329B offers identical functionality in a legacy QFP package better suited for prototyping, while H8S/2328 provides a lower-cost entry point with halved memory - both require no software porting but differ in physical integration and memory scalability.

Availability

DF2329EVTE25V is available at Aetrix Electronics and suitable for industrial motor control, factory automation PLC modules, building energy management systems, and test & measurement instrumentation requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for DF2329EVTE25V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and enterprise applications.

The H8S/2329 Group was designed as a high-integration, reprogrammable 16-bit MCU platform for deterministic embedded control in industrial equipment, balancing flash flexibility, peripheral richness, and real-time responsiveness.

FAQ

What is the maximum operating frequency supported by DF2329EVTE25V?

The DF2329EVTE25V supports a maximum operating frequency of 25 MHz, as confirmed in the H8S/2329 Group Hardware Manual Rev.6.00. This frequency defines the upper limit for instruction execution speed and peripheral timing accuracy, and requires stable 3.0–3.6 V supply and properly decoupled clock circuitry. The DF2329EVTE25V achieves this rating in its FP-128B package under standard industrial temperature conditions.

Does DF2329EVTE25V include on-chip flash memory, and how many reprogramming cycles does it support?

Yes, DF2329EVTE25V integrates 512 KB of F-ZTAT™ flash memory, a Renesas proprietary reprogrammable technology. According to the official hardware manual, this flash supports a minimum of 100 write/erase cycles with guaranteed electrical characteristics and 10 years of data retention. The DF2329EVTE25V uses this flash for both program storage and field firmware updates without requiring external programming hardware.

What package type is used for DF2329EVTE25V, and what are its key mechanical features?

DF2329EVTE25V is packaged in the FP-128B (Fine Pitch Plastic Ball Grid Array) format: a 128-pin, 14 mm × 14 mm body with 0.8 mm ball pitch. Its design emphasizes high I/O density, thermal dissipation for sustained 25 MHz operation, and compatibility with standard SMT reflow profiles. The FP-128B footprint differs from the TFP-120 QFP used in related variants like HD64F2329B, making DF2329EVTE25V unsuitable for drop-in replacement in QFP-based designs.

Which serial communication interfaces are integrated into DF2329EVTE25V?

DF2329EVTE25V integrates two full-duplex asynchronous Serial Communication Interfaces (SCI), each supporting programmable baud rates, framing options, and error detection. Verified bit rate settings include 9600 bps (±0.47% error) and 38400 bps (±1.73% error) when using a 25 MHz system clock. These SCIs are used for host communication, Modbus RTU, and debug console functions in deployed DF2329EVTE25V systems.

How does DF2329EVTE25V handle external memory interfacing, and what chip select signals are available?

DF2329EVTE25V provides seven dedicated chip select outputs - CS0 through CS7 - managed by its bus controller. These signals are configured as outputs via data direction registers and enabled by CS167E or CS25E bits, supporting both ROM-enabled and ROM-disabled expansion modes. In ROM-enabled mode, all CSn pins default to input after reset and must be explicitly configured for output - a critical initialization step for any DF2329EVTE25V design using external memory or peripherals.