Analog Devices Inc./Maxim Integrated DG303ABWE

Overview

DG303ABWE from Maxim Integrated is a dual SPDT CMOS analog switch optimized for low-power, precision signal routing in bipolar supply systems. It features <50Ω on-resistance, 150ns turn-on time, ±15V analog signal range (V+ to V−), break-before-make switching, and TTL/CMOS-compatible control inputs - enabling reliable operation in portable instrumentation and battery-powered sample/hold circuits.

For engineers reviewing the DG303ABWE datasheet, DG303ABWE pinout, DG303ABWE application, or DG303ABWE equivalent, this device supports dual independent SPDT switching with low charge injection (12pC), high off-isolation (62dB), and single-supply capability (V− = GND) - critical for precision analog multiplexing and programmable gain amplifier design.

Technical Context

The DG303ABWE implements monolithic CMOS switch architecture with latchup-proof construction and fully complementary P/N-channel transistor pairs per channel. Its break-before-make timing (50ns interval) prevents signal shorting during state transitions, and its rail-to-rail analog signal handling (V− to V+) enables direct interfacing with op-amp outputs and sensor front-ends without level-shifting.

Control logic accepts standard TTL/CMOS voltage thresholds (0.8V/4.0V), and internal substrate biasing ensures stable R_DS(ON) across temperature (0.5%/°C typical). The device operates from ±5V to ±18V supplies, with guaranteed performance over −25°C to +85°C ambient.

Key Specifications

Pinout & Package

Package: 16-Lead Wide SO (SOIC-W), 7.6mm × 10.3mm body, 1.27mm lead pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual SPDT analog switch applications.

Compared with DG303ABWE, ADG403BRZ trades speed and on-resistance for enhanced ESD robustness (±4kV HBM), while TS5A23157DGSR sacrifices voltage range and isolation for ultra-low quiescent current (1nA) - making DG303ABWE the sole option meeting simultaneous requirements for ±15V operation, sub-50Ω R_DS(ON), and break-before-make timing in extended-temperature industrial designs.

Availability

DG303ABWE is available at Aetrix Electronics and suitable for portable instrumentation, low-power sample/hold circuits, and programmable gain amplifiers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DG303ABWE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) designs high-performance analog and mixed-signal ICs for industrial, medical, and communications applications, with emphasis on power efficiency and signal integrity.

The DG303ABWE belongs to Maxim's DG300A family of TTL-compatible CMOS analog switches, engineered specifically for precision, low-power signal routing in battery-operated and wide-supply industrial equipment.

FAQ

What is the maximum supply voltage rating for DG303ABWE?

The DG303ABWE supports bipolar supplies up to ±18V (36V total), with absolute maximum V+ = +18V and V− = −18V referenced to GND. Exceeding these ratings risks permanent damage. For single-supply use, V− must be tied to GND and V+ operated between +10V and +30V - confirmed in the Absolute Maximum Ratings table and Applications Information section of the datasheet.

Does DG303ABWE support break-before-make switching, and what is its timing specification?

Yes, DG303ABWE guarantees break-before-make operation with a minimum 50ns interval between turn-off of one path and turn-on of the alternate path - explicitly specified in the Electrical Characteristics table under "Break-Before-Make Interval" for DG303(A) devices. This prevents momentary shorting in SPDT configurations critical for relay-replacement and signal routing safety.

What is the typical on-resistance matching between channels in DG303ABWE?

DG303ABWE exhibits ≤10% typical on-resistance matching between its two SPDT channels, as stated in the Applications Information section. This tight matching ensures consistent gain and attenuation across both switch paths - essential for differential signal routing and programmable filter applications where channel balance directly impacts common-mode rejection.

Can DG303ABWE operate from a single +12V supply?

Yes, DG303ABWE supports single-supply operation by connecting V− to GND and applying +12V to V+. In this configuration, the analog signal range becomes 0V to +12V, and logic inputs remain compatible with standard 3.3V or 5V CMOS levels. Table 1 in the datasheet confirms functional operation at +12V with t_ON ≈ 120ns and R_DS(ON) ≈ 45Ω.

What is the charge injection value of DG303ABWE, and how does it impact sample/hold accuracy?

DG303ABWE specifies 12pC typical charge injection (measured with ±15V supplies and 0V analog input), as shown in Table 2 and Figure 1. When driving a 10nF hold capacitor, this injects a 1.2mV error step - directly limiting achievable resolution in high-accuracy data acquisition. Designers mitigate this by selecting hold capacitance ≥100nF or using correlated double sampling techniques.