Diodes Incorporated DNLS320E-13

Overview

DNLS320E-13 from Diodes Incorporated is a low V_CE(SAT) NPN surface-mount transistor in SOT-223 package, rated for 20 V V_CEO, 3 A continuous collector current, and 0.04 V V_CE(SAT) at I_C = 0.1 A / I_B = 0.5 mA. It delivers h_FE > 400 at I_C = 2 A and is optimized for medium-power switching in DC-DC converters and motor drivers.

For engineers reviewing the DNLS320E-13 datasheet, DNLS320E-13 pinout, DNLS320E-13 application, or DNLS320E-13 equivalent, key selection criteria include verified R_CE(SAT) = 80 mΩ at 3 A, thermal resistance R_θJA = 125 °C/W on FR-4, RoHS-compliant matte tin plating, and complementary PNP pairing with DPLS325E-13.

Technical Context

This epitaxial planar NPN transistor operates as a medium-power switch or linear amplifier with fast switching (t_on = 26 ns, t_off = 220 ns) under 10 V V_CC and 500 mA I_C. Its low saturation voltage enables high-efficiency operation in 12 V rail switching and PWM-controlled loads.

The device features robust thermal performance (T_J = –55 to +150 °C), J-STD-020D Level 1 moisture sensitivity, and UL 94V-0 molded plastic packaging-enabling reliable automated assembly in industrial power modules and automotive body control units.

Key Specifications

Pinout & Package

Package: SOT-223 - Surface-mount plastic package with exposed thermal pad (pin 4), rated for 1 W dissipation on FR-4 with recommended pad layout AP02001.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power switching applications.

Compared with ZXTN2020ZTA and MJD31C-TP, DNLS320E-13 provides the lowest V_CE(SAT) and best thermal efficiency in 12–24 V medium-power switching, while maintaining identical SOT-223 footprint and RoHS compliance.

Availability

DNLS320E-13 is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drivers, LED constant-current regulators, and power supply OR-ing circuits requiring stable component supply and long-term manufacturability.

Supply support for DNLS320E-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The DNLS320E-13 belongs to Diodes' "Low V_CE(SAT) Transistor" product line, engineered specifically for high-efficiency, medium-power switching in space-constrained industrial and automotive power systems.

FAQ

What is the maximum allowable junction temperature for DNLS320E-13?

The absolute maximum junction temperature is +150 °C, with continuous operation limited to this value. Derating begins at T_A > 25 °C per the R_θJA = 125 °C/W curve in Figure 1; at 75 °C ambient, max power drops to 600 mW to maintain T_J ≤ 150 °C.

Is DNLS320E-13 compatible with lead-free reflow profiles?

Yes - it meets J-STD-020D Level 1 moisture sensitivity and uses matte tin annealed plating over copper leadframe, supporting standard Pb-free reflow profiles (peak 260 °C, 30 sec max). No pre-bake is required due to its Level 1 rating.

Can DNLS320E-13 be used in linear amplifier mode?

Yes - its h_FE > 400 at I_C = 2 A and f_T = 150 MHz support stable small-signal amplification up to ~10 MHz. However, power dissipation must remain within 1 W (derated above 25 °C ambient) to avoid thermal runaway in Class-A configurations.

What is the marking code on the top of the SOT-223 package?

The top-side marking is "N320 YWW", where "N320" identifies the DNLS320E product type and "YWW" is the date code (Y = last digit of year, WW = week number, e.g., "723" = week 23 of 2007).