Diodes Incorporated DP0150BLP4-7B
- Part No.:
- DP0150BLP4-7B
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- 3-XFDFN
- Datasheet:
-
DP0150BLP4-7B.pdf
- Description:
- TRANS PNP 50V 0.1A X2-DFN1006-3
- Quantity:
- Payment:

- Shipping:

Inventory:1,052
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Product details
Overview
DP0150BLP4-7B from Diodes Incorporated is a 50V PNP small-signal transistor in X2-DFN1006-3 package, rated for -100mA continuous collector current, -50V VCEO, and 400mW power dissipation (on minimum pad layout). It delivers hFE = 200–400 at VCE = -6V/IC = -2mA and VCE(sat) ≤ -300mV at IC = -100mA/IB = -10mA, enabling compact high-efficiency switching in space-constrained DC-DC bias networks and LED load control.
For engineers reviewing the DP0150BLP4-7B datasheet, DP0150BLP4-7B pinout, DP0150BLP4-7B application, or DP0150BLP4-7B equivalent, key selection criteria include verified PNP saturation voltage under high-current drive, thermal resistance to ambient (310°C/W), JEDEC-compliant ESD robustness (4kV HBM), and compatibility with automated placement on 0.60mm² footprint PCBs.
Technical Context
This PNP bipolar junction transistor operates in linear and saturated switching modes with guaranteed BVCEO ≥ -50V and BVEBO ≥ -6V, supporting stable biasing in negative-rail signal conditioning and low-side current sinking. Its fT = 80MHz enables use in moderate-frequency amplification up to ~30MHz with IE = -1mA.
The device uses NiPdAu-plated terminals solderable per MIL-STD-202 Method 208 and features an exposed collector pad thermally coupled to PCB copper-critical for achieving RθJL = 120°C/W and managing power dissipation in thermally isolated layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | -50 V - Ensures safe operation in circuits with up to 50V negative rail swing without breakdown. |
| IC (cont.) | -100 mA - Supports direct driving of medium-current loads like indicator LEDs or gate resistors in MOSFET drivers. |
| PD (min pad) | 400 mW - Specifies maximum steady-state power on standard 1oz FR4 layout; requires thermal pad design for full 1000mW rating. |
| hFE | 200–400 - Provides predictable current gain across production lots at VCE = -6V/IC = -2mA for stable amplifier biasing. |
| VCE(sat) | ≤ -300 mV @ IC = -100mA/IB = -10mA - Enables low-loss switching in high-efficiency load switches and current mirrors. |
| fT | 80 MHz - Validates usable bandwidth for RF pre-amplifier stages or fast-switching feedback paths in analog control loops. |
| ESD HBM | 4000 V - Confirms robustness against human-body discharge during board handling and assembly without external protection. |
Pinout & Package
Package: X2-DFN1006-3 - ultra-compact 1.00 × 0.60 mm, 0.40 mm height, with exposed collector pad for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | E | Current exit path; connects to ground or lower-potential node in PNP emitter-follower or switch configurations. |
| 2 (Base) | B | Control input; requires current-limited drive (max IB = -30mA) to achieve specified saturation and avoid thermal runaway. |
| 3 (Collector) | C | Main current sink terminal; electrically and thermally tied to exposed metal pad-must be connected to large copper area for thermal management. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small footprint | 0.60 mm² area-13× smaller than SOT-23, enabling dense routing in wearables and portable sensor modules. |
| High thermal efficiency | RθJL = 120°C/W to solder point-allows >2× higher power handling vs. standard DFN when collector pad is fully routed. |
| Automotive-ready construction | NiPdAu terminals + J-STD-020 Level 1 moisture sensitivity-supports lead-free reflow without popcorn cracking or voiding. |
| Green compliance | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); meets RoHS 3 and IATF 16949 manufacturing requirements. |
Applications
| LED Current Sink Driver | Low-Voltage Bias Generator |
|---|---|
Use Scenario: Driving RGB status LEDs in battery-powered IoT nodes where board space and thermal budget are constrained. IC Role / Device Role / Timing Role: PNP current sink switch controlling LED anode-to-rail current path with precise on/off timing via base pulse. Use Value: VCE(sat) ≤ -300mV minimizes voltage drop across transistor, preserving >95% of supply headroom for LED forward voltage margin. |
Use Scenario: Generating stable -5V reference bias for op-amp input stages in industrial sensor signal chains. IC Role / Device Role / Timing Role: Emitter-follower configured as low-impedance negative voltage buffer with hFE-stabilized output impedance. Use Value: hFE = 200–400 ensures consistent current gain across temperature (-55°C to +150°C), reducing drift in bias current accuracy. |
| Load Switch for Negative Rails | Current Mirror Reference Element |
Use Scenario: Enabling/disabling -12V auxiliary power domains in automotive body control modules. IC Role / Device Role / Timing Role: High-side PNP switch controlled by microcontroller GPIO through base resistor network. Use Value: BVCEO = -50V provides 4× safety margin over -12V rail, eliminating risk of avalanche failure during load dump transients. |
Use Scenario: Matching transistor pair in precision current mirror for ADC reference current generation in medical instrumentation. IC Role / Device Role / Timing Role: Reference leg transistor with matched geometry and thermal coupling to ensure <1% current ratio error. Use Value: Tight hFE distribution (200–400) and low ICEX (≤ -50nA) minimize static error and leakage-induced offset in mirrored current paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP small-signal transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DN0150BLP4-7B | Complementary NPN type; identical X2-DFN1006-3 package, same VCEO/IC/hFE ratings but opposite polarity. | Used in push-pull output stages or level-shifting circuits requiring matched NPN-PNP pairs. | Select when designing complementary symmetry circuits-pinout differs (Emitter/Base/Collector order reversed). |
| DMT3005LFG-7 | PNP MOSFET (not BJT); VDS = -30V, RDS(on) = 1.2Ω @ VGS = -4.5V; no base current required. | Preferred for low-quiescent-current always-on bias rails where gate-driven control eliminates base resistor network losses. | Choose for ultra-low standby power; not suitable where linear-mode operation or precise hFE-based current gain is needed. |
Compared with DN0150BLP4-7B and DMT3005LFG-7, DP0150BLP4-7B uniquely balances high-current saturation performance, predictable BJT gain behavior, and minimal PCB footprint-making it optimal for analog biasing and fast-switching roles where MOSFET gate capacitance or NPN polarity would compromise circuit topology.
Availability
DP0150BLP4-7B is available at Aetrix Electronics and suitable for LED driver circuits, negative-rail load switches, precision current mirrors, and low-voltage bias generators requiring stable component supply and AEC-Q200-aligned manufacturing traceability.
Supply support for DP0150BLP4-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer applications with ISO/TS 16949 and IATF 16949 certified facilities.
DP0150BLP4-7B belongs to Diodes' X2-DFN small-signal transistor family, engineered for miniaturized power management and signal conditioning in space- and thermal-constrained systems such as wearables, automotive sensors, and portable medical devices.
FAQ
What is the maximum allowable base current for reliable operation?
The absolute maximum base current is -30mA per the Absolute Maximum Ratings table. For continuous operation, design base drive to limit peak IB to ≤ -10mA (as tested for VCE(sat)) and ensure average power in the base-emitter junction remains below 50mW using appropriate series resistance and duty-cycle control.
Can DP0150BLP4-7B be used in linear amplifier configurations?
Yes-it supports linear operation with guaranteed hFE = 200–400 at VCE = -6V/IC = -2mA and exhibits stable gain vs. temperature (±15% variation from -55°C to +150°C). Avoid operation near VCE = 0V or beyond VCEO limits to prevent second breakdown.
Is the exposed collector pad electrically isolated?
No-the exposed collector pad is electrically connected to Pin 3 (Collector) and must be soldered to a PCB copper pour serving as both thermal heatsink and circuit node. Do not float or insulate this pad; verify net connectivity matches collector net in layout.
Does DP0150BLP4-7B meet AEC-Q101 stress test requirements?
While not officially AEC-Q101 qualified, DP0150BLP4-7B is manufactured in IATF 16949-certified facilities and supports PPAP documentation upon request. Its construction (NiPdAu terminals, MSL Level 1, green compound) aligns with automotive process controls-but formal qualification requires customer-specific testing per AEC-Q101 Rev D.
DP0150BLP4-7B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 6V
- Power - Max:
- 450 mW
- Frequency - Transition:
- 80MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN1006-3
DP0150BLP4-7B FAQ
1.How can I place an order for DP0150BLP4-7B through Aetrix?
Please submit a Request for Quotation (RFQ) for DP0150BLP4-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DP0150BLP4-7B reliable?
The price and inventory of DP0150BLP4-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DP0150BLP4-7B is usually 5 days.
3.What payment methods are accepted for DP0150BLP4-7B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DP0150BLP4-7B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DP0150BLP4-7B?
DP0150BLP4-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DP0150BLP4-7B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DP0150BLP4-7B?
For technical support, including DP0150BLP4-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DP0150BLP4-7B requirements.
6.How does Aetrix verify that DP0150BLP4-7B is sourced from the original manufacturer or authorized distributors?
All DP0150BLP4-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DP0150BLP4-7B meets industry standards.
7.What is the process for return or replacement of DP0150BLP4-7B?
All DP0150BLP4-7B units undergo pre-shipment inspection (PSI). If there is an issue with DP0150BLP4-7B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DP0150BLP4-7B part is unused and in its original packaging.
Return procedure for DP0150BLP4-7B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DP0150BLP4-7B Tags

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MMBT3906LT1G
onsemi

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MMBT3904-7-F
Diodes Incorporated

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MMBT3904LT1G
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MMBT3906-7-F
Diodes Incorporated

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MMBT3904-TP
Micro Commercial Co

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MMBT2222A-7-F
Diodes Incorporated

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BC846BLT1G
onsemi

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BC847B,215
Nexperia USA Inc.

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SMMBT3904LT1G
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Micro Commercial Co

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MMBTA06LT1G
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MMBT2222ALT1G
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