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Texas Instruments DPA02257RGBR

Part No.:
DPA02257RGBR
Manufacturer:
Texas Instruments
Category:
Special Purpose Regulators
Package:
20-VFQFN Exposed Pad
Datasheet:
AetrixDPA02257RGBR.pdf
Description:
IC REG CONV DDR 1OUT 20VQFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,664

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Product details

Overview

TPS53317RGBR from Texas Instruments is a 6-A synchronous step-down DC/DC converter with integrated high- and low-side MOSFETs, designed specifically for DDR memory VDDQ termination. It delivers regulated output from 0.6 V to 2.0 V with ±1% output voltage accuracy, supports both source and sink operation, and employs D-CAP+™ adaptive on-time control for fast transient response in DDR3/DDR4 systems.

For engineers reviewing the TPS53317RGBR datasheet, TPS53317RGBR pinout, TPS53317RGBR application, or TPS53317RGBR equivalent, key selection considerations include its dual-mode (SKIP/forced CCM) operation, selectable 600 kHz or 1 MHz switching frequency, integrated droop support, external tracking capability, and V5IN UVLO protection at 4.37 V nominal.

Technical Context

The TPS53317RGBR implements D-CAP+™ mode control, where the on-time is dynamically adjusted based on input/output voltage and current feedback (VCS), enabling near-constant frequency under steady-state while maintaining rapid load-step response. Its internal voltage servo DAC provides 1.6-ms soft-start and supports pre-bias startup.

It integrates full 6-A bidirectional current capability-source up to +6 A and sink down to –9.3 A-with valley overcurrent detection, ±32% UVP/OVP thresholds referenced to REFIN, and thermal shutdown at 145°C with 10°C hysteresis. The device operates across –40°C to 85°C and supports ceramic or SP/POSCAP output capacitors without external compensation.

Key Specifications

Parameter Value and Actual Design Meaning
Output Current ±6 A continuous (source/sink), enabling full DDR VTT/VDDQ bidirectional regulation
Output Voltage Range 0.6 V to 2.0 V adjustable; ±1% accuracy ensures tight DDR compliance
Switching Frequency Selectable 600 kHz or 1 MHz; balances efficiency, size, and EMI in POL designs
Control Architecture D-CAP+™ adaptive on-time; eliminates loop compensation components and improves transient response
Input Voltage Range VIN: 1.0 V to 6.0 V; V5IN: 4.5 V to 6.5 V with 4.37 V UVLO threshold
Protection Features OVP (120% of VREFIN), UVP (68% of VREFIN), thermal shutdown (145°C), hiccup-mode OCL
Package 3.5 mm × 4 mm, 20-pin VQFN with PowerPAD; RθJB = 12.4°C/W for high-power density layout

Pinout & Package

The TPS53317RGBR is housed in a 3.5 mm × 4 mm, 20-pin VQFN package (RGB suffix) with exposed thermal pad (PowerPAD) for enhanced thermal performance. Pin numbering follows top-view orientation per TI SLUSAK4D Rev D.

Pin/Terminal Circuit Role Design Meaning
BST (16) Bootstrap supply Drives high-side FET gate; requires 0.1-µF capacitor to SW; enables efficient 100% duty cycle capability
COMP (8) Loop compensation node Connects R-C-C network to VREF for stability tuning; sets bandwidth and phase margin
EN (17) Enable input 3.3-V logic compatible; initiates soft-start when pulled high; <0.5 V disables regulator
PGOOD (19) Open-drain status output Asserts high when VOUT is within ±8% of target; 8-ms startup delay ensures valid regulation before system enable
REFIN (9) Tracking reference input Accepts 0.6–2.0 V external reference; enables DDR VDDQ = ½ VDDQ tracking or fixed-output configuration
SW (11–15) Switching node Multi-pin connection (5 pins) reduces parasitic inductance and thermal resistance for 6-A switching currents
V5IN (20) Analog & gate-drive supply Provides 5-V bias for internal circuitry; includes 4.37 V UVLO with 440 mV hysteresis for robust startup
VOUT (10) Output voltage monitor Single-ended feedback input; used with REFIN for precision regulation and ripple rejection

Key Features

Feature Design Value
D-CAP+™ mode architecture Enables zero-external-compensation design and sub-10 µs load-step response for DDR memory rails
Integrated MOSFETs + PowerPAD Eliminates discrete FETs and external drivers; 3.5×4 mm footprint supports >3 A/mm² power density
Selectably forced CCM or SKIP mode Forced CCM ensures constant frequency during tracking; SKIP mode improves light-load efficiency by >15%
Full ±6-A bidirectional regulation Meets JEDEC DDR3L/DDR4 VTT sink/source requirements without external current mirrors or op-amps
External voltage tracking Supports VDDQ = ½ VIN or ½ independent VDDQ rail via REFIN, enabling compliant DDR memory sequencing

Applications

DDR Memory Termination VTT Rail Regulation

Use Scenario: Regulating VDDQ for DDR3/DDR4 SDRAM modules in servers and workstations.

IC Role / Device Role / Timing Role: Primary VDDQ buck converter with bidirectional current capability and tracking to match memory controller voltage.

Use Value: Maintains ±1% VDDQ accuracy across –40°C to 85°C and 0–6 A load, meeting JEDEC JESD79-4A VDDQ tolerance.

Use Scenario: Generating DDR VTT termination voltage referenced to VDDQ in high-speed memory interfaces.

IC Role / Device Role / Timing Role: Precision half-VDDQ regulator using REFIN tracking; sinks/source up to 6 A during memory write/read transitions.

Use Value: Eliminates need for discrete op-amp + pass-FET solutions; achieves <100 ns transient recovery with integrated droop control.

Low-Voltage POL Supply DDR3L/DDR4 Memory Subsystem

Use Scenario: Point-of-load conversion for FPGA I/O banks or ASIC core rails requiring 0.6–2.0 V at up to 6 A.

IC Role / Device Role / Timing Role: High-efficiency synchronous buck with selectable frequency and light-load SKIP mode.

Use Value: Delivers >90% peak efficiency at 1.05 V/4 A (VIN = 3.3 V), reducing thermal load in space-constrained PCBs.

Use Scenario: Dual-rail power delivery for DDR3L/DDR4 DIMMs with independent VDDQ and VTT sequencing.

IC Role / Device Role / Timing Role: Single-chip solution supporting non-tracking (fixed VDDQ) and tracking (VTT = ½ VDDQ) modes via MODE pin.

Use Value: Reduces BOM count by 4+ components vs. discrete controller + dual-FET solution; simplifies layout with single IC footprint.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR termination regulator applications.

Alternative Part Technical Difference Application Difference Selection Advice
TPS53319RGFR Same 6-A rating and D-CAP+™ architecture but adds programmable current limit and improved light-load efficiency via adaptive diode emulation. Preferred for new DDR4 designs requiring tighter OCL tolerance (±5%) and lower quiescent current (<10 µA). Choose TPS53319RGFR if programmable OCL and <15 µA shutdown current are required; not pin-compatible due to different MODE pin function.
ISL95812IRZ 6-A DDR VDDQ regulator with integrated MOSFETs, but uses voltage-mode control and requires external compensation. Used in legacy Intel platform designs; lacks D-CAP+™ transient performance and external tracking support. Consider ISL95812IRZ only for drop-in replacement in existing ISL958xx-based layouts; no REFIN tracking or PGOOD delay configurability.

Compared with TPS53317RGBR, TPS53319RGFR offers enhanced programmability and lower IQ but requires layout revision, while ISL95812IRZ provides voltage-mode stability in mature platforms but sacrifices transient response and feature integration.

Availability

TPS53317RGBR is available at Aetrix Electronics and suitable for DDR memory termination, VTT rail generation, and low-voltage point-of-load applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for TPS53317RGBR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with over 50 years of innovation in high-reliability power conversion ICs.

The TPS53317RGBR belongs to TI's D-CAP+™ synchronous buck regulator product line, engineered specifically for JEDEC-compliant DDR memory termination and high-efficiency, low-component-count POL designs.

FAQ

What is the maximum continuous output current capability of the TPS53317RGBR?

The TPS53317RGBR supports ±6 A continuous output current - +6 A sourcing and –9.3 A sinking - making it suitable for DDR VDDQ and VTT termination where bidirectional current flow is required during memory read/write cycles. This capability is validated across the full operating temperature range (–40°C to 85°C) and does not require derating under typical PCB thermal conditions.

Does the TPS53317RGBR support external voltage tracking, and how is it implemented?

Yes, the TPS53317RGBR supports external voltage tracking via the REFIN pin, which accepts a 0.6 V to 2.0 V reference input. When configured for tracking, the output regulates to match REFIN - enabling VTT = ½ VDDQ implementations. Tracking requires a minimum 260 µs delay after VREF reaches 2 V before applying REFIN, as specified in the SLUSAK4D datasheet Figure 21.

What protection features are integrated into the TPS53317RGBR?

The TPS53317RGBR integrates overvoltage protection (OVP at 120% of VREFIN), undervoltage protection (UVP at 68% of VREFIN), thermal shutdown at 145°C with 10°C hysteresis, V5IN UVLO (4.37 V nominal), and valley overcurrent limiting (7.6 A positive / –9.3 A negative). All protections trigger automatic soft-stop and latch-off behavior, with PGOOD deassertion signaling fault conditions.

Can the TPS53317RGBR operate without external compensation components?

Yes, the TPS53317RGBR uses D-CAP+™ adaptive on-time control, which eliminates the need for external loop compensation components in most applications. Only a simple R-C-C network between COMP and VREF is required for fine-tuning stability in demanding layouts - unlike traditional voltage-mode controllers that mandate full Type-II or Type-III compensation networks.

What is the purpose of the V5IN pin on the TPS53317RGBR, and what happens if it falls below UVLO?

The V5IN pin supplies 5 V to the TPS53317RGBR's internal analog circuits and gate drivers. If V5IN drops below its 4.37 V UVLO threshold (with 440 mV hysteresis), the device shuts down all switching activity, discharges the output via the internal 42-Ω discharge FET, and forces PGOOD low. This ensures safe, controlled shutdown when auxiliary bias is lost - critical for system-level power sequencing integrity.

DPA02257RGBR Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
D-CAP+™
Package/Case:
20-VFQFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Applications:
Converter, DDR
Voltage - Input:
1V ~ 6V
Number of Outputs:
1
Voltage - Output:
0.6V ~ 2V
Operating Temperature:
-40°C ~ 85°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
20-VQFN (3.5x4)

DPA02257RGBR FAQ

1.How can I place an order for DPA02257RGBR through Aetrix?

Please submit a Request for Quotation (RFQ) for DPA02257RGBR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DPA02257RGBR reliable?

The price and inventory of DPA02257RGBR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DPA02257RGBR is usually 5 days.

3.What payment methods are accepted for DPA02257RGBR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DPA02257RGBR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DPA02257RGBR?

DPA02257RGBR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DPA02257RGBR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DPA02257RGBR?

For technical support, including DPA02257RGBR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DPA02257RGBR requirements.

6.How does Aetrix verify that DPA02257RGBR is sourced from the original manufacturer or authorized distributors?

All DPA02257RGBR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DPA02257RGBR meets industry standards.

7.What is the process for return or replacement of DPA02257RGBR?

All DPA02257RGBR units undergo pre-shipment inspection (PSI). If there is an issue with DPA02257RGBR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DPA02257RGBR part is unused and in its original packaging.

Return procedure for DPA02257RGBR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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