Analog Devices Inc./Maxim Integrated DS1210SN
- Part No.:
- DS1210SN
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Controllers
- Package:
- 16-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
DS1210SN.pdf
- Description:
- IC CNTRLR CHIP NV IND 16-SOIC
- Quantity:
- Payment:

- Shipping:

Inventory:4,691
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Product details
Overview
DS1210SN from Maxim Integrated is a nonvolatile controller IC that enables battery-backed CMOS RAM operation by providing automatic power-fail detection, write protection, and dual-battery switching. It operates over -40°C to +85°C, consumes <100nA battery current, and supports 4.5V–5.5V VCCI with ±0.12V trip-point tolerance. Used in industrial data loggers, real-time clocks, and embedded controllers requiring persistent memory retention during main power loss.
For engineers reviewing the DS1210SN datasheet, DS1210SN pinout, DS1210SN application, or DS1210SN equivalent, key selection criteria include its dual-battery redundancy support, 20ns CE propagation delay, precise 4.25V–4.74V VCC trip points (configurable via TOL pin), low-leakage battery monitoring, and industrial-temperature-rated 16-pin SO package.
Technical Context
The DS1210SN integrates five core functions: (1) bidirectional power-switching between VCCI and two batteries (VBAT1/VBAT2) with <0.3V forward drop; (2) precision comparator-based power-fail detection with user-selectable trip thresholds (4.25V/4.5V min); (3) CEO output hold logic that delays write-protection until CE returns high, preventing mid-cycle data corruption; (4) battery voltage self-test at power-up using a 2.0V threshold comparator; and (5) internal isolation switch enabling transparent failover between redundant batteries.
Its architecture uses low-leakage CMOS process technology to achieve <100nA quiescent battery current while maintaining reliable operation across -40°C to +85°C. The TOL pin configures detection range: grounded for 4.50–4.74V trip, tied to VCCO for 4.25–4.49V trip. CEO output follows CE with ≤20ns delay under nominal supply, but clamps to within 0.2V of active supply during power-fail.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCCI Range | 4.5V–5.5V (supports standard 5V systems with 10% tolerance margin) |
| VCC Trip Point (TOL=GND) | 4.50V–4.74V (ensures write protection triggers before RAM data retention fails) |
| VCC Trip Point (TOL=VCCO) | 4.25V–4.49V (enables tighter brown-out detection for critical applications) |
| Battery Current (IBAT) | <100nA (extends 10-year lithium battery life without compromising reliability) |
| CEO Propagation Delay | ≤20ns (preserves timing integrity during fast power transitions) |
| Operating Temp Range | -40°C to +85°C (certified for industrial-grade embedded systems) |
| Battery Voltage Threshold | 2.0V (triggers warning before SRAM data retention drops below safe level) |
Pinout & Package
DS1210SN is supplied in a 16-pin Small Outline (SO) package, 300-mil body width, RoHS-compliant (suffix "+"). Pin count, spacing, and thermal characteristics (θJA = 70°C/W) are optimized for industrial PCB layouts requiring long-term reliability and minimal board area.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 3, 5, 7, 9, 11, 13, 15 | NC | No-connect pins; must remain unconnected per design-no internal function or tie-off required |
| 2 | VCCO | RAM supply output; delivers regulated backup power to SRAM VDD during main power loss |
| 4 | VBAT1 | Primary battery input; supplies VCCO when VCCI falls out-of-tolerance |
| 6 | TOL | Tolerance select input; ground for 4.50–4.74V trip, connect to VCCO for 4.25–4.49V trip |
| 8 | GND | System ground reference; common return for all analog/digital circuitry and battery paths |
| 10 | VCCI | Main supply input; monitored for out-of-tolerance condition to trigger backup mode |
| 12 | VBAT2 | Secondary battery input; enabled only when VBAT1 fails; provides seamless redundancy |
| 14 | CEO | Chip enable output; drives SRAM CE pin; held low or clamped during power-fail to prevent writes |
| 16 | CE | Chip enable input; controls CEO behavior and determines write-protection timing alignment |
Key Features
| Feature | Design Value |
|---|---|
| Dual-battery redundancy | Internal isolation switch selects highest-voltage battery; failover is transparent and requires no firmware intervention |
| Configurable power-fail threshold | TOL pin selects between two precision trip ranges (±0.12V), enabling system-specific brown-out response |
| Write-protection timing control | CEO holds state until CE goes high post-power-fail, ensuring full memory cycle completion before inhibition |
| Power-up battery health check | Automatically verifies VBAT ≥2.0V on every power-on; prevents data corruption from weak batteries |
| Ultra-low battery drain | <100nA quiescent current preserves lithium battery capacity for >10 years in standby |
Applications
| Industrial Data Logger | Real-Time Clock Module |
|---|---|
Use Scenario: Continuous environmental sensor data storage in remote, unattended equipment with intermittent AC power. IC Role / Device Role / Timing Role: Nonvolatile controller managing SRAM backup during grid outages and brown-outs. Use Value: Ensures zero data loss across multi-year deployments by sustaining SRAM with dual lithium batteries and verifying battery health at each boot. | Use Scenario: Battery-backed RTC in telecom base stations requiring accurate timekeeping during extended power failures. IC Role / Device Role / Timing Role: Power-fail supervisor and write-protect enforcer for RTC SRAM holding calendar, alarm, and calibration registers. Use Value: Prevents clock register corruption during rapid voltage sags by clamping CEO within 0.2V of supply and delaying inhibition until CE release. |
| Embedded Controller EEPROM Emulation | Medical Device Configuration Storage |
Use Scenario: Using SRAM + DS1210SN as high-endurance, low-latency alternative to EEPROM in PLC I/O modules. IC Role / Device Role / Timing Role: Real-time power switchover controller enabling instant SRAM write access without wear-out limitations. Use Value: Delivers 20ns CE-to-CEO propagation and <0.3V switch drop-critical for deterministic control loop execution during power transitions. | Use Scenario: Storing patient calibration profiles and device settings in portable diagnostic instruments with strict regulatory uptime requirements. IC Role / Device Role / Timing Role: Fail-safe memory supervisor enforcing write protection and battery redundancy per IEC 62304 Class C software safety requirements. Use Value: Dual-battery support and 2.0V battery-check threshold ensure configuration integrity across 10+ years of clinical use without maintenance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile memory controller applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1216H | Integrated lithium battery + SRAM in single module; no external battery wiring; higher BOM cost; fixed 10-year battery life | Drop-in replacement where board space is constrained and field battery replacement is impractical | Select DS1216H when eliminating external battery connections and simplifying assembly outweighs flexibility and serviceability |
| MAX6900 | RTC + nonvolatile controller combo; includes I²C interface, built-in oscillator, and calendar; no dual-battery support; 500nA battery current | Suitable for time-critical applications needing integrated timekeeping, not pure SRAM backup | Select MAX6900 when combining RTC functionality with memory backup reduces component count and firmware overhead |
Compared with DS1210SN, DS1216H eliminates external battery management but sacrifices field-replaceability and voltage configurability; MAX6900 adds timekeeping at the cost of higher battery drain and no redundancy-DS1210SN remains optimal for high-reliability, dual-battery SRAM backup in industrial control.
Availability
DS1210SN is available at Aetrix Electronics and suitable for industrial data loggers, real-time clock modules, embedded controller EEPROM emulation, and medical device configuration storage requiring stable component supply across extended product lifecycles.
Supply support for DS1210SN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and power management ICs for industrial, automotive, and communications applications.
The DS1210SN belongs to Maxim's nonvolatile memory controller product line, engineered specifically to convert standard CMOS SRAM into robust, battery-backed memory subsystems for mission-critical embedded systems.
FAQ
What is the primary function of the DS1210SN in a memory system?
The DS1210SN serves as a nonvolatile controller that converts standard CMOS SRAM into battery-backed memory by automatically switching power to one or two batteries when main supply (VCCI) falls out-of-tolerance. It enforces write protection via CEO output, monitors battery health at power-up, and manages redundant battery selection-all within a single 16-pin SO package. Its design ensures data integrity during power loss without firmware involvement.
How does the TOL pin affect DS1210SN operation?
The TOL pin on the DS1210SN configures the VCC trip-point range: grounding TOL sets detection between 4.50V and 4.74V; connecting TOL to VCCO shifts it to 4.25V–4.49V. This allows system designers to tailor brown-out response to their power supply regulation tolerance and noise margin. The DS1210SN uses this setting to determine when to inhibit CEO and activate battery backup-ensuring reliable operation across varying rail stability conditions.
Can DS1210SN support two batteries simultaneously, and how does it manage them?
Yes, the DS1210SN supports two batteries via VBAT1 and VBAT2 pins. It incorporates an internal isolation switch that selects the battery with the higher voltage during backup mode. If the active battery drops below 2.0V, the DS1210SN triggers a warning-but only switches to the secondary battery if the primary fails completely. Grounding unused VBAT pins is mandatory; the DS1210SN ensures seamless, transparent failover without interrupting SRAM operation or requiring host intervention.
What is the significance of the 20ns propagation delay specification for DS1210SN?
The 20ns maximum CE-to-CEO propagation delay in the DS1210SN guarantees tight timing alignment between processor CE signals and SRAM write-enable control during rapid power transitions. This ensures that memory cycles initiated just before power loss complete successfully before CEO is inhibited-preventing partial writes and data corruption. In systems with fast microcontrollers or high-speed SRAM, this parameter directly determines whether the DS1210SN can maintain data coherency without adding wait states or firmware delays.
Does DS1210SN require external components to operate, and what are the minimum connections?
The DS1210SN requires no external passive components for core operation. Minimum connections include VCCI (main supply), GND, CE (input), CEO (output to SRAM CE), VCCO (to SRAM VDD), VBAT1 (battery), and TOL (grounded or tied to VCCO). VBAT2 and NC pins may be left unconnected if redundancy is unused. All specifications-including <100nA battery current and 2.0V battery-check threshold-are guaranteed with this minimal configuration, as validated in Maxim's production test flow.
DS1210SN Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 16-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Controller Type:
- Nonvolatile RAM
- Voltage - Supply:
- 4.75V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
DS1210SN FAQ
1.How can I place an order for DS1210SN through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1210SN on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1210SN reliable?
The price and inventory of DS1210SN are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1210SN is usually 5 days.
3.What payment methods are accepted for DS1210SN?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1210SN transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1210SN?
DS1210SN orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1210SN order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1210SN?
For technical support, including DS1210SN datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1210SN requirements.
6.How does Aetrix verify that DS1210SN is sourced from the original manufacturer or authorized distributors?
All DS1210SN products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1210SN meets industry standards.
7.What is the process for return or replacement of DS1210SN?
All DS1210SN units undergo pre-shipment inspection (PSI). If there is an issue with DS1210SN, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1210SN part is unused and in its original packaging.
Return procedure for DS1210SN:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1210SN Tags

-
BQ2201SN-N
Texas Instruments

-
DS1314S+
Analog Devices Inc./Maxim Integrated
-
BQ2205LYPW
Texas Instruments
-
MXD1210CSA+
Analog Devices Inc./Maxim Integrated

-
MXD1210CPA+
Analog Devices Inc./Maxim Integrated

-
4RCD0232KC1ATG
Renesas Electronics Corporation
-
DS1312S-2+
Analog Devices Inc./Maxim Integrated
-
DS1314S-2+T&R
Analog Devices Inc./Maxim Integrated

-
DS1321S+
Analog Devices Inc./Maxim Integrated

-
DS1312S+
Analog Devices Inc./Maxim Integrated
-
MXD1210ESA+
Analog Devices Inc./Maxim Integrated

-
DS1321E+
Analog Devices Inc./Maxim Integrated
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