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Analog Devices Inc./Maxim Integrated DS1210S/T&R
- Part No.:
- DS1210S/T&R
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Controllers
- Package:
- 16-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
DS1210S/T&R.pdf
- Description:
- IC CONTROLLER CHIP NV 16-SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,249
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Product details
Overview
DS1210S/T&R from Maxim Integrated is a nonvolatile RAM controller IC that converts standard CMOS SRAM into battery-backed nonvolatile memory. It provides automatic power-fail detection (4.5V–4.74V trip), write protection via CEO inhibition, seamless VCCI-to-battery switchover with <0.3V forward drop, and dual-battery redundancy support. Used in industrial data loggers requiring persistent memory during AC loss.
For engineers reviewing the DS1210S/T&R datasheet, DS1210S/T&R pinout, DS1210S/T&R application, or DS1210S/T&R equivalent, key selection criteria include power-fail voltage tolerance configuration (TOL pin), CEO propagation delay (≤20ns), battery current drain (<100nA), and 16-pin SO package compatibility with high-density PCB layouts.
Technical Context
The DS1210S/T&R implements five tightly integrated functions: (1) bidirectional power-path switching between VCCI and VBAT1/VBAT2 with <0.3V dropout; (2) precision comparator-based power-fail detection with two selectable trip ranges (4.25–4.49V or 4.50–4.74V); (3) CE-to-CEO write-protection logic with 20ns max propagation delay and cycle-completion hold; (4) battery health check at power-up using 2.0V threshold; and (5) internal isolation switch enabling transparent dual-battery redundancy.
Its low-leakage CMOS process enables <100nA battery standby current and supports operation across -40°C to +85°C (industrial grade). The 16-pin SO package isolates unused pins as NC, eliminating floating inputs while maintaining pin-compatible signal routing with the 8-pin PDIP variant for layout flexibility.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCC Trip Point (TOL=GND) | 4.50–4.74V: sets precise power-fail detection threshold for write protection activation |
| Battery Current Drain | <100nA: enables multi-year backup with standard lithium batteries without significant capacity loss |
| CEO Propagation Delay | ≤20ns: ensures memory write cycles complete before write protection engages during brownout |
| Forward Voltage Drop | <0.3V: minimizes voltage sag on VCCO during battery switchover, preserving SRAM VDD margin |
| Battery Voltage Threshold | 2.0V: triggers battery-fail warning at power-up to prevent data corruption in low-battery state |
| Operating Temperature | -40°C to +85°C: certified for industrial environments including factory automation and outdoor telemetry |
| Package Type | 16-pin SO (300 mil): surface-mount footprint reduces board area vs. 8-pin PDIP while supporting automated assembly |
Pinout & Package
DS1210S/T&R is housed in a 16-pin small-outline (SO) package with 300-mil width. Pin 1 is located at the top-left corner with dot marking; pins are numbered counter-clockwise. All NC pins must remain unconnected to avoid unintended biasing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCCO | RAM supply output | Delivers regulated power to SRAM VDD; sourced from VCCI or battery depending on power status |
| VBAT1 | Battery 1 input | Primary backup source; must be connected to ≥2.0V battery; unused VBAT2 must be grounded |
| TOL | Tolerance select | GND selects 4.50–4.74V trip; tied to VCCO selects 4.25–4.49V trip for tighter regulation |
| GND | Ground reference | Common return for all analog and digital circuitry; requires low-impedance PCB plane |
| CE | Chip enable input | Active-low control signal from microcontroller; used to gate memory access during normal operation |
| CEO | Chip enable output | Drives SRAM CE pin; held low during power fail to block writes; follows CE with ≤20ns delay otherwise |
| VBAT2 | Battery 2 input | Redundant backup source; automatically selected if higher voltage than VBAT1; grounded if unused |
| VCCI | Main supply input | Primary 4.5–5.5V system rail; monitored continuously for out-of-tolerance condition |
Key Features
| Feature | Design Value |
|---|---|
| Dual-battery redundancy | Internal isolation switch selects highest-voltage battery; failover is transparent and preserves data integrity |
| Power-fail hysteresis | Configurable trip point (±0.12V tolerance) prevents chatter during marginal supply conditions |
| Write-cycle completion hold | CEO remains in prior state until CE goes high post-power-fail, preventing partial writes |
| Battery health self-test | Automated 2.0V threshold check at power-up enables early warning of imminent data loss |
| Low-drop power switch | <0.3V forward drop maintains ≥4.7V at VCCO even with 5.0V VCCI and weak battery |
Applications
| Industrial Data Logger | Medical Patient Monitor |
|---|---|
Use Scenario: Continuous recording of sensor readings during mains power interruption. IC Role / Device Role / Timing Role: Nonvolatile controller managing SRAM backup and write protection during brownout events. Use Value: Ensures no loss of critical waveform or diagnostic data when AC fails, meeting IEC 60601-1 uptime requirements. | Use Scenario: Storing real-time vital sign history in ICU monitors with battery fallback. IC Role / Device Role / Timing Role: Power-fail detector and SRAM VDD supervisor enabling zero-data-loss memory retention. Use Value: Maintains ≥10-year battery-backed memory life with <100nA drain, satisfying FDA Class II device longevity mandates. |
| Factory Automation PLC | Smart Meter Firmware Storage |
Use Scenario: Preserving ladder logic state and I/O configuration during unexpected power cycling. IC Role / Device Role / Timing Role: Dual-battery managed controller ensuring deterministic SRAM retention across temperature extremes. Use Value: Supports -40°C to +85°C operation with redundant batteries, eliminating cold-start data corruption in unheated enclosures. | Use Scenario: Securing firmware update buffers and tariff tables during grid instability in AMI meters. IC Role / Device Role / Timing Role: Low-leakage nonvolatile enabler interfacing with 28-pin parallel SRAMs. Use Value: Enables 15+ year meter lifetime using coin-cell batteries due to sub-100nA quiescent current draw. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile RAM controller applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1210N+ | Same functionality and pinout, but in 8-pin PDIP package; lacks NC pins for routing isolation | Preferred for through-hole prototyping or legacy designs with space constraints | Select DS1210N+ only when PDIP assembly or manual rework is required |
| MAX6900 | Integrated RTC + NV SRAM controller; adds timekeeping but consumes >1µA battery current | Suitable where timestamped logging is needed, not pure memory backup | Choose MAX6900 only when real-time clock functionality justifies 10× higher battery drain |
Compared with DS1210S/T&R, DS1210N+ offers identical electrical behavior in a smaller footprint but less routing flexibility, while MAX6900 trades ultra-low battery drain for integrated timekeeping-making DS1210S/T&R optimal for cost-sensitive, long-life SRAM backup where timing is externally managed.
Availability
DS1210S/T&R is available at Aetrix Electronics and suitable for industrial data loggers, medical patient monitors, factory automation PLCs, and smart meter firmware storage requiring stable component supply and guaranteed long-term availability.
Supply support for DS1210S/T&R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and power management ICs for industrial, medical, and communications systems.
The DS1210S/T&R belongs to Maxim's nonvolatile memory controller product line, engineered specifically to eliminate data loss in SRAM-based systems during power interruptions without external supervision logic.
FAQ
What is the function of the TOL pin on the DS1210S/T&R?
The TOL pin on the DS1210S/T&R selects the power-fail detection threshold: grounding TOL sets the trip point to 4.50–4.74V, while connecting it to VCCO lowers the threshold to 4.25–4.49V. This allows system designers to match the DS1210S/T&R's response to their specific supply regulator tolerance and brownout profile, ensuring reliable write protection without false triggering during nominal ripple.
How does the DS1210S/T&R handle dual-battery redundancy?
The DS1210S/T&R uses an internal isolation switch to monitor both VBAT1 and VBAT2 inputs, automatically selecting the battery with the higher voltage during backup mode. If the active battery drops below 2.0V, the DS1210S/T&R issues a warning and seamlessly transfers load to the secondary battery-no software intervention or external logic is required, and the switchover is electrically transparent to the SRAM.
Can the DS1210S/T&R operate with a single battery?
Yes-the DS1210S/T&R operates fully with only VBAT1 connected; VBAT2 must be grounded in single-battery configurations per datasheet Note 3. The DS1210S/T&R disables redundant-battery logic when VBAT2 is grounded, reducing complexity and ensuring predictable behavior while retaining all core functions: power-fail detection, CEO-controlled write protection, and <100nA battery drain.
What is the maximum load current the DS1210S/T&R can supply to SRAM in battery mode?
The DS1210S/T&R guarantees up to 50µA of battery backup current (ICCO2 parameter) when VCCO = VBAT – 0.3V. This is sufficient to power typical low-leakage CMOS SRAMs (e.g., 32k×8 devices drawing ≤35µA at 25°C), ensuring stable VCCO during extended outages without voltage collapse or data corruption.
Does the DS1210S/T&R require external components for basic operation?
No-the DS1210S/T&R requires no external resistors, capacitors, or diodes for core functionality. Only VCCI, GND, CE, VBAT1 (and optionally VBAT2), and connections to SRAM VCCO and CE are needed. The internal precision comparator, low-leakage switch, and battery monitor are fully self-contained, minimizing BOM count and PCB area in space-constrained designs.
DS1210S/T&R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 16-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Controller Type:
- Nonvolatile RAM
- Voltage - Supply:
- 4.75V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
DS1210S/T&R FAQ
1.How can I place an order for DS1210S/T&R through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1210S/T&R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1210S/T&R reliable?
The price and inventory of DS1210S/T&R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1210S/T&R is usually 5 days.
3.What payment methods are accepted for DS1210S/T&R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1210S/T&R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1210S/T&R?
DS1210S/T&R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1210S/T&R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1210S/T&R?
For technical support, including DS1210S/T&R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1210S/T&R requirements.
6.How does Aetrix verify that DS1210S/T&R is sourced from the original manufacturer or authorized distributors?
All DS1210S/T&R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1210S/T&R meets industry standards.
7.What is the process for return or replacement of DS1210S/T&R?
All DS1210S/T&R units undergo pre-shipment inspection (PSI). If there is an issue with DS1210S/T&R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1210S/T&R part is unused and in its original packaging.
Return procedure for DS1210S/T&R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DS1210S/T&R Tags
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