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Analog Devices Inc./Maxim Integrated DS1220AB-200IND+
- Part No.:
- DS1220AB-200IND+
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 24-DIP Module (0.600", 15.24mm)
- Datasheet:
-
DS1220AB-200IND+.pdf
- Description:
- IC NVSRAM 16KBIT PARALLEL 24EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:4,767
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Product details
Overview
DS1220AB-200IND+ from Maxim Integrated (now Analog Devices) is a 16k nonvolatile static RAM organized as 2048 × 8 bits, featuring lithium-backed data retention, 100 ns read/write access time, ±5% VCC tolerance (4.75–5.25 V), and industrial temperature operation (–40°C to +85°C). It directly replaces volatile 2k × 8 SRAMs and EEPROMs in battery-backed memory systems for programmable logic controllers and legacy industrial controllers.
For engineers reviewing the DS1220AB-200IND+ datasheet, DS1220AB-200IND+ pinout, DS1220AB-200IND+ application, or DS1220AB-200IND+ equivalent, key selection criteria include guaranteed 10-year data retention without external power, automatic write protection during VCC decay, JEDEC-standard 24-pin EDIP package compatibility, and seamless substitution for 2716 EPROM/2816 EEPROM sockets in retrofitted control systems.
Technical Context
The DS1220AB-200IND+ integrates a self-contained lithium energy source with voltage-monitoring circuitry that triggers automatic write protection when VCC falls below 4.5 V (VTP), then switches to battery backup below ~3.0 V. Its CMOS architecture enables unlimited write cycles and eliminates need for external support circuitry.
It operates in three distinct modes: standard read/write (CE/OE/WE-controlled), standby (CE high), and data retention (VCC = 0), with deterministic timing parameters including tACC = 100 ns, tWC = 100 ns, and tDR ≥ 10 years - all validated across –40°C to +85°C per industrial-grade qualification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 2048 words × 8 bits (16,384-bit NV SRAM) |
| Access Time | 100 ns - ensures compatibility with 10 MHz bus systems without wait states |
| VCC Range | 4.75 V to 5.25 V (±5%) - supports stable operation under noisy industrial power rails |
| Data Retention | ≥10 years without power - enabled by sealed lithium cell and automatic VCC monitoring |
| Operating Temperature | –40°C to +85°C - qualified for uncontrolled industrial environments |
| Write Protection Threshold | VTP = 4.5 V min - initiates unconditional write lock before data corruption occurs |
| Package | 24-pin 720-mil extended DIP (EDIP) - direct drop-in for legacy 24-pin sockets |
Pinout & Package
DS1220AB-200IND+ uses a JEDEC-standard 24-pin encapsulated DIP package (720-mil width), with pin 1 at top-left corner when notch faces up. The package is RoHS-compliant (indicated by '+' suffix) and wave-solderable only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address Inputs | 11-bit address bus supporting full 2048-word addressing |
| DQ0–DQ7 | Data I/O | Bidirectional 8-bit data bus compatible with standard microprocessor data paths |
| CE | Chip Enable | Active-low chip select; disables outputs and reduces ICCS2 to ≤5 mA in standby |
| WE | Write Enable | Active-low write strobe; controls write cycle initiation and output disable timing (tODW = 35 ns) |
| OE | Output Enable | Active-low output enable; allows read access while CE is active (tOE = 50 ns) |
| VCC | Power Supply | +5 V ±5% supply input; powers logic and enables lithium switch-on at first power-up |
| GND | Ground | Reference return path for all signals and internal switching circuits |
Key Features
| Feature | Design Value |
|---|---|
| Lithium freshness seal | Lithium cell electrically disconnected until first VCC application > VTP, preserving full 10-year capacity |
| Automatic power-fail response | VCC monitoring triggers write protection within 1.5 µs (tPD) and battery switchover below ~3.0 V |
| Unlimited write endurance | No wear-out mechanism - supports continuous logging or configuration updates without cycle limits |
| Direct socket replacement | Pinout matches 2716 EPROM and 2816 EEPROM, enabling hardware-level upgrades without PCB changes |
| Industrial-grade qualification | Specified and tested over –40°C to +85°C with full AC/DC parameter compliance |
Applications
| Programmable Logic Controller (PLC) Configuration Memory | Industrial HMI Data Logging Buffer |
|---|---|
Use Scenario: Storing ladder logic configuration and I/O mapping in DIN-rail mounted PLCs subject to frequent power cycling. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing immediate-access memory with zero boot delay and guaranteed data integrity during brownouts. Use Value: Eliminates need for external battery holders or EEPROM write-delay firmware, reducing BOM count and field failure risk. | Use Scenario: Capturing sensor timestamps and alarm events in human-machine interface terminals deployed in factory-floor environments. IC Role / Device Role / Timing Role: High-speed buffer retaining real-time logs during unexpected AC loss, with no data loss across 10,000+ power cycles. Use Value: Enables deterministic 100 ns writes and 10-year retention without supervisory ICs or backup capacitors. |
| Retrofitted CNC Machine Tool Memory | Legacy Telecom Shelf Controller NVRAM |
Use Scenario: Upgrading obsolete 2716 EPROM-based memory in decades-old CNC motion controllers requiring field-replaceable firmware storage. IC Role / Device Role / Timing Role: Pin-compatible NV SRAM delivering SRAM-speed execution while preserving existing socket footprint and address decoding. Use Value: Restores reliability of aging systems without redesign - no layout or firmware changes required. | Use Scenario: Maintaining shelf identity, port assignments, and calibration data in telecom line cards operating in temperature-uncontrolled central offices. IC Role / Device Role / Timing Role: Industrial-temperature nonvolatile memory immune to voltage sags and thermal cycling-induced bit errors. Use Value: Meets Telcordia GR-63-CORE shock/vibration and GR-1089-EMC requirements via intrinsic robustness, not external protection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1220AD-100IND+ | Wider VCC range (4.5–5.5 V, ±10%), lower VTP (4.25 V), same pinout/package | Better suited for systems with unstable 5 V rails; slightly reduced noise margin on write-protection threshold | Select DS1220AD-100IND+ if power supply regulation is marginal; otherwise DS1220AB-200IND+ offers tighter VCC control and higher VTP immunity |
| STK12C68-AW50I | Same 16k × 8 organization, 50 ns access, but uses capacitor-based backup and requires external charging circuit | Lacks integrated lithium and automatic switchover; needs external diode, resistor, and supercapacitor | Choose STK12C68-AW50I only if cost sensitivity outweighs design simplicity and long-term reliability; DS1220AB-200IND+ eliminates support components |
Compared with DS1220AD-100IND+, DS1220AB-200IND+ provides tighter VCC regulation margin and higher write-protection threshold, improving immunity to transient dips; versus STK12C68-AW50I, it delivers true maintenance-free operation with no external components or recharge management overhead.
Availability
DS1220AB-200IND+ is available at Aetrix Electronics and suitable for industrial automation, legacy system modernization, and telecom infrastructure projects requiring stable component supply, long-lifecycle assurance, and RoHS-compliant through-hole memory solutions.
Supply support for DS1220AB-200IND+ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (acquired by Analog Devices in 2021) designs precision analog, mixed-signal, and nonvolatile memory solutions for industrial, automotive, and communications markets.
The DS1220AB-200IND+ belongs to Maxim's legacy nonvolatile SRAM product line, engineered specifically for drop-in replacement of aging EPROM/EEPROM/SRAM in mission-critical industrial control systems where data integrity across power loss is non-negotiable.
FAQ
What is the guaranteed data retention period for DS1220AB-200IND+?
The DS1220AB-200IND+ guarantees ≥10 years of data retention in the absence of external power, measured from the time VCC is first applied. This is achieved via an integrated lithium energy source and automatic power-fail detection circuitry that isolates and preserves memory contents without user intervention or external components.
Does DS1220AB-200IND+ require external support circuitry for battery backup operation?
No, DS1220AB-200IND+ requires no external support circuitry. Its internal lithium cell, voltage monitor, and power-switching circuitry operate autonomously. The lithium source remains electrically disconnected until first VCC application, ensuring full energy capacity, and automatically engages during power loss - eliminating need for diodes, capacitors, or charge controllers.
Is DS1220AB-200IND+ pin-compatible with standard 24-pin memory sockets?
Yes, DS1220AB-200IND+ uses a JEDEC-standard 24-pin 720-mil extended DIP package and matches the pinout of both the 2716 EPROM and 2816 EEPROM. This enables direct socket replacement in legacy systems without PCB modification, preserving existing address decoding, control logic, and physical mounting.
What is the write protection voltage threshold for DS1220AB-200IND+?
The DS1220AB-200IND+ asserts unconditional write protection when VCC falls below 4.5 V (minimum VTP), with typical activation at 4.62 V. This threshold is factory-trimmed and guaranteed across –40°C to +85°C, preventing partial writes and data corruption during brownout conditions before battery switchover occurs.
Can DS1220AB-200IND+ be used in place of volatile SRAM without firmware changes?
Yes, DS1220AB-200IND+ functions identically to a standard 2k × 8 SRAM during normal operation - same read/write timing, control signal behavior (CE/OE/WE), and data bus interface. Firmware designed for volatile SRAM works unchanged; nonvolatility and power-loss protection are transparent to software.
DS1220AB-200IND+ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 24-DIP Module (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 200ns
- Access Time:
- 200 ns
- Voltage - Supply:
- 4.75V ~ 5.25V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-EDIP
DS1220AB-200IND+ FAQ
1.How can I place an order for DS1220AB-200IND+ through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1220AB-200IND+ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1220AB-200IND+ reliable?
The price and inventory of DS1220AB-200IND+ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1220AB-200IND+ is usually 5 days.
3.What payment methods are accepted for DS1220AB-200IND+?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1220AB-200IND+ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1220AB-200IND+?
DS1220AB-200IND+ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1220AB-200IND+ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1220AB-200IND+?
For technical support, including DS1220AB-200IND+ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1220AB-200IND+ requirements.
6.How does Aetrix verify that DS1220AB-200IND+ is sourced from the original manufacturer or authorized distributors?
All DS1220AB-200IND+ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1220AB-200IND+ meets industry standards.
7.What is the process for return or replacement of DS1220AB-200IND+?
All DS1220AB-200IND+ units undergo pre-shipment inspection (PSI). If there is an issue with DS1220AB-200IND+, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1220AB-200IND+ part is unused and in its original packaging.
Return procedure for DS1220AB-200IND+:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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