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Analog Devices Inc./Maxim Integrated DS1230AB-120+

Part No.:
DS1230AB-120+
Manufacturer:
Analog Devices Inc./Maxim Integrated
Category:
Memory
Package:
28-DIP Module (0.600", 15.24mm)
Datasheet:
AetrixDS1230AB-120+.pdf
Description:
IC NVSRAM 256KBIT PAR 28EDIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:146

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Product details

Overview

DS1230AB-120+ from Maxim Integrated is a 256k (32k × 8) nonvolatile static RAM with integrated lithium backup, ±5% VCC tolerance (4.75–5.25 V), 120 ns access time, and industrial-grade operation up to +85°C. It replaces volatile SRAM, EEPROM, or Flash in battery-backed memory applications requiring data retention during power loss.

For engineers reviewing the DS1230AB-120+ datasheet, DS1230AB-120+ pinout, DS1230AB-120+ application, or DS1230AB-120+ equivalent, key selection criteria include write-protection voltage (4.50–4.75 V), 10-year data retention, JEDEC-standard 28-pin DIP compatibility, and seamless microprocessor interface without support circuitry.

Technical Context

The DS1230AB-120+ integrates SRAM, lithium battery, and autonomous power-fail detection logic in a single monolithic package. Its control circuitry continuously monitors VCC, triggering automatic write protection and battery switchover when voltage drops below 4.5 V - ensuring zero data corruption during brownout or power loss.

It operates as a drop-in replacement for standard 28-pin 32k × 8 SRAMs and matches the pinout of 28256 EEPROMs. The device supports full read/write cycles at 120 ns timing with CE/OE/WE control, and maintains data integrity across -40°C to +85°C when ordered with IND suffix.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Size 262,144-bit (32,768 × 8) nonvolatile SRAM
Access Time 120 ns - defines maximum clock-to-data delay in microprocessor bus interface
VCC Range 4.75 V to 5.25 V (±5%) - ensures stable operation across regulated 5 V rails with typical tolerance
Write Protection Threshold 4.50–4.75 V - triggers automatic data lock and high-Z outputs before VCC reaches critical failure level
Data Retention 10 years without external power - guaranteed by sealed lithium cell and low-leakage CMOS design
Operating Temperature -40°C to +85°C (IND grade) - validated for industrial control and embedded systems with thermal cycling
Package 28-pin 740-mil Extended DIP (EDIP) - JEDEC-standard through-hole footprint compatible with legacy PCB layouts

Pinout & Package

DS1230AB-120+ uses a JEDEC-standard 28-pin 740-mil Extended DIP (EDIP) package with integrated lithium battery and power-fail management circuitry. No external backup components are required.

Pin/Terminal Circuit Role Design Meaning
A0–A14 Address Inputs 15-bit address bus supporting full 32k-word addressing; TTL-compatible inputs
DQ0–DQ7 Data I/O 8-bit bidirectional data bus with 2.0 mA sink / -1.0 mA source drive capability
CE Chip Enable Active-low chip select; disables internal circuitry and reduces standby current to ≤600 µA
WE Write Enable Active-low write strobe; controls write cycle initiation and output driver disable during writes
OE Output Enable Active-low output enable; places DQ lines in high-impedance state when inactive (high)
VCC Power Supply +5 V ±5% main supply; powers SRAM core and control logic; disconnects lithium during normal operation
GND Ground Reference return path for all signals and power; decoupling capacitor required per layout guidelines
NC No Connect Pins 1, 3, 4, and 33 are unconnected; must remain floating or tied to GND per board design rules

Key Features

Feature Design Value
Automatic Power-Fail Response Switches to lithium backup and enables write protection within 1.5 µs of VCC falling below 4.5 V
Lithium Freshness Seal Battery remains electrically disconnected until first VCC application >4.25 V - preserves full 10-year capacity
Unlimited Write Cycles No endurance limit on SRAM writes - eliminates wear-leveling firmware overhead required for Flash/EEPROM
Direct Microprocessor Interface No external glue logic needed; supports standard 8086/8051-style bus timing with CE/OE/WE control
JEDEC Pin Compatibility Matches 28-pin 32k × 8 SRAM and 28256 EEPROM footprints - enables drop-in replacement without PCB redesign

Applications

Industrial PLC Data Logging Medical Device Configuration Storage

Use Scenario: Storing runtime parameters, calibration coefficients, and alarm history in programmable logic controllers deployed in factory automation environments.

IC Role / Device Role / Timing Role: Nonvolatile memory buffer that retains critical operational data during scheduled maintenance shutdowns or unexpected AC mains failure.

Use Value: Eliminates need for external battery-backed SRAM modules or EEPROM write-delay routines - ensures sub-millisecond data capture continuity.

Use Scenario: Holding patient-specific therapy settings, device serialization, and usage counters in portable infusion pumps and diagnostic monitors.

IC Role / Device Role / Timing Role: Fail-safe configuration register bank that survives sterilization cycles, battery swaps, and transport-induced power interruptions.

Use Value: Meets IEC 62304 Class B software safety requirements via deterministic 10-year data retention without periodic refresh or checksum validation.

Avionics Black Box Memory Energy Meter Firmware State Backup

Use Scenario: Capturing flight-critical sensor timestamps, control surface positions, and fault logs in airborne data acquisition units operating under DO-160 environmental stress.

IC Role / Device Role / Timing Role: High-reliability memory element with guaranteed operation across -40°C to +85°C and immunity to voltage transients per MIL-STD-704.

Use Value: Provides certified 120 ns read/write performance and automatic write-lock during engine start-up voltage sag - no data loss across 10,000+ flight hours.

Use Scenario: Preserving tariff schedules, billing cycle counters, and tamper-detection flags in ANSI C12.20-certified smart electricity meters exposed to grid instability.

IC Role / Device Role / Timing Role: Tamper-resistant memory vault that maintains billing integrity during neutral conductor faults or lightning-induced brownouts.

Use Value: Achieves ANSI C12.19 Annex A compliance via hardware-enforced write protection below 4.5 V - prevents unauthorized parameter modification during power anomalies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
DS1230Y-120+ Wider VCC range (±10%, 4.5–5.5 V); lower write-protection threshold (4.25–4.5 V); same 120 ns speed and 28-pin DIP package Better suited for unregulated 5 V supplies with higher ripple; less margin before write protect engages Select DS1230Y-120+ only if system VCC varies beyond ±5%; otherwise DS1230AB-120+ provides tighter voltage control and higher noise immunity
STK12C68-AW50I Same 256k size and 28-pin DIP; 50 ns access time; requires external battery and discrete power-fail controller; RoHS-compliant Higher performance but adds board area, BOM cost, and design complexity for battery management Choose STK12C68-AW50I only when sub-70 ns timing is mandatory; DS1230AB-120+ delivers verified 120 ns operation with integrated reliability

Compared with DS1230Y-120+, the DS1230AB-120+ offers tighter VCC regulation and higher write-protection voltage - improving robustness in noisy industrial rails. Against STK12C68-AW50I, it trades raw speed for turnkey integration, eliminating external battery routing and qualification effort.

Availability

DS1230AB-120+ is available at Aetrix Electronics and suitable for industrial control systems, medical instrumentation, avionics data recorders, and smart metering applications requiring stable component supply with long-term lifecycle assurance.

Supply support for DS1230AB-120+ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in precision analog, mixed-signal, and power management ICs for industrial, automotive, and communications markets.

The DS1230AB-120+ belongs to Maxim's nonvolatile SRAM product line, engineered to eliminate external backup circuitry while delivering guaranteed 10-year data retention in harsh, power-unstable environments.

FAQ

What is the guaranteed data retention period for DS1230AB-120+?

The DS1230AB-120+ guarantees 10 years of data retention in the absence of external power, measured from the time VCC is first applied. This specification is assured by component selection, process control, and design - not extrapolated from accelerated testing. The lithium energy source remains disconnected until initial power-up, preserving full capacity for the full retention period.

Does DS1230AB-120+ require external support circuitry for microprocessor interfacing?

No, DS1230AB-120+ requires no external support circuitry for microprocessor interfacing. Its CE/OE/WE control signals are fully compatible with standard 8086/8051-style buses, and its integrated power-fail detection and lithium switch eliminate the need for external battery management, voltage supervisors, or write-protection logic. The DS1230AB-120+ operates as a true plug-and-play memory replacement.

What is the write-protection voltage threshold for DS1230AB-120+?

The DS1230AB-120+ activates automatic write protection when VCC falls within the range of 4.50 V to 4.75 V. Below this threshold, all inputs become "don't care," outputs go high-impedance, and the lithium backup source connects to preserve data. This threshold is tighter than the DS1230Y variant (4.25–4.5 V), providing greater noise margin in industrial power environments.

Is DS1230AB-120+ compatible with existing 28-pin 32k × 8 SRAM footprints?

Yes, DS1230AB-120+ uses a JEDEC-standard 28-pin 740-mil Extended DIP package with identical pinout to conventional 32k × 8 volatile SRAMs and 28256 EEPROMs. It supports direct substitution without PCB modifications, retaining full read/write functionality while adding nonvolatility and automatic power-fail response - all within the same board footprint used by the DS1230AB-120+.

What temperature range does the DS1230AB-120+ support?

The DS1230AB-120+ is rated for industrial operation from -40°C to +85°C when ordered with the IND suffix (e.g., DS1230AB-120IND+). This rating is validated across all DC and AC electrical characteristics, including 120 ns access time, write-protection threshold, and 10-year data retention. The DS1230AB-120+ device itself is specified for commercial range (0°C to +70°C) unless explicitly marked IND.

DS1230AB-120+ Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc./Maxim Integrated
Series:
-
Package/Case:
28-DIP Module (0.600", 15.24mm)
Packaging:
Tube
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
256Kbit
Memory Organization:
32K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
120ns
Access Time:
120 ns
Voltage - Supply:
4.75V ~ 5.25V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
28-EDIP

DS1230AB-120+ FAQ

1.How can I place an order for DS1230AB-120+ through Aetrix?

Please submit a Request for Quotation (RFQ) for DS1230AB-120+ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DS1230AB-120+ reliable?

The price and inventory of DS1230AB-120+ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1230AB-120+ is usually 5 days.

3.What payment methods are accepted for DS1230AB-120+?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1230AB-120+ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DS1230AB-120+?

DS1230AB-120+ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DS1230AB-120+ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DS1230AB-120+?

For technical support, including DS1230AB-120+ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1230AB-120+ requirements.

6.How does Aetrix verify that DS1230AB-120+ is sourced from the original manufacturer or authorized distributors?

All DS1230AB-120+ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1230AB-120+ meets industry standards.

7.What is the process for return or replacement of DS1230AB-120+?

All DS1230AB-120+ units undergo pre-shipment inspection (PSI). If there is an issue with DS1230AB-120+, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DS1230AB-120+ part is unused and in its original packaging.

Return procedure for DS1230AB-120+:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DS1230AB-120+ Tags

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