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Analog Devices Inc./Maxim Integrated DS1230AB-70+
- Part No.:
- DS1230AB-70+
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Memory
- Package:
- 28-DIP Module (0.600", 15.24mm)
- Datasheet:
-
DS1230AB-70+.pdf
- Description:
- IC NVSRAM 256KBIT PAR 28EDIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,237
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Product details
Overview
DS1230AB-70+ from Maxim Integrated is a 256k (32k × 8) nonvolatile static RAM with integrated lithium backup, ±5% VCC tolerance (4.75–5.25V), 70 ns access time, and 10-year data retention without external power. It functions as a drop-in replacement for volatile SRAMs in real-time clock and configuration memory applications where power loss resilience is critical.
For engineers reviewing the DS1230AB-70+ datasheet, DS1230AB-70+ pinout, DS1230AB-70+ application, or DS1230AB-70+ equivalent, this page delivers verified package mapping, JEDEC-standard 28-pin DIP pin roles, industrial-grade voltage thresholds, write-protection behavior at 4.5 V, and validated alternatives for legacy SRAM upgrade paths.
Technical Context
The DS1230AB-70+ integrates a self-contained lithium battery, SRAM core, and voltage-monitoring control circuitry that automatically enables write protection when VCC falls below 4.5 V and switches to battery power below ~3.0 V. Its read/write timing complies with standard microprocessor bus cycles using CE, WE, and OE controls.
It operates in three distinct modes: normal active mode (VCC ≥ 4.75 V), data retention mode (VCC < 4.5 V, battery-backed), and freshness-seal mode (lithium disconnected until first VCC application > 4.25 V). All inputs become "don't care" and outputs go high-impedance during power fail detection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 262,144-bit (32,768 × 8), byte-wide organization compatible with 8-bit microprocessor data buses |
| Access Time | 70 ns - ensures compatibility with 14 MHz bus clocks and eliminates wait states in most 8/16-bit systems |
| VCC Range | 4.75 V to 5.25 V (±5%) - supports stable operation across regulated 5 V rails with typical supply ripple |
| Data Retention | 10 years minimum without external power - guaranteed by internal lithium cell and low-leakage CMOS design |
| Write Protection Threshold | 4.50–4.75 V - triggers automatic hardware write lock before VCC drops to levels risking data corruption |
| Operating Temp | 0°C to +70°C - commercial-grade rating suitable for embedded controllers and instrumentation enclosures |
| Package | 28-pin 740-mil Extended DIP (EDIP) - JEDEC-standard footprint enabling direct PCB replacement of legacy 28-pin SRAMs |
Pinout & Package
DS1230AB-70+ uses a JEDEC-standard 28-pin 740-mil Extended DIP (EDIP) package with through-hole mounting. The package integrates SRAM, lithium battery, and power-fail control in a single hermetically sealed unit.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | 15-bit address bus accepting full 32k-word range; TTL-compatible input thresholds |
| DQ0–DQ7 | Data I/O | Bidirectional 8-bit data bus with 2 mA sink / 1 mA source capability; high-impedance on deselect |
| CE | Chip Enable | Active-low chip select; must be low with WE low for write, or with OE low for read |
| WE | Write Enable | Active-low write strobe; falling edge initiates write; output drivers disabled when asserted |
| OE | Output Enable | Active-low output enable; controls data bus drivers independently of CE/WE during reads |
| VCC | Power Supply | +5 V ±5% main supply; powers SRAM and control logic; disconnects lithium until first application |
| GND | Ground | Reference return for all signals and internal circuitry; requires low-impedance connection |
| NC | No Connect | Pins 1, 3, 4, and 33 are unconnected; no internal bonding; must remain floating |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Fail Switching | Hardware-monitored VCC decay triggers seamless lithium switchover below ~3.0 V with no software intervention |
| Unlimited Write Cycles | CMOS SRAM core enables infinite endurance - no wear-out mechanism unlike EEPROM or Flash |
| Freshness Seal | Lithium cell electrically isolated until first VCC > 4.25 V, preserving full 10-year retention capacity |
| Direct SRAM Replacement | Pinout and timing match 28-pin 32k × 8 volatile SRAMs and 28256 EEPROMs - zero layout change required |
| Write Protection Lock | Hardware-enforced write disable below 4.5 V - prevents partial writes and data corruption during brownout |
Applications
| Real-Time Clock (RTC) Backup Memory | Industrial PLC Configuration Storage |
|---|---|
|
Use Scenario: Maintaining calendar, alarm, and calibration settings in battery-powered RTC modules during AC mains failure. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing immediate-access, byte-addressable storage synchronized to RTC register reads/writes. Use Value: Eliminates need for external battery management circuitry while guaranteeing 10-year data integrity without refresh overhead. |
Use Scenario: Storing ladder logic parameters, I/O mapping, and firmware update flags in programmable logic controllers deployed in factory automation. IC Role / Device Role / Timing Role: System-critical configuration memory that survives unexpected power loss during runtime or firmware updates. Use Value: Prevents machine downtime and configuration re-entry after brownouts, leveraging 70 ns access for fast parameter recall during boot. |
| Medical Device Setup Data | Point-of-Sale Terminal Transaction Logs |
|
Use Scenario: Preserving patient-specific therapy settings, calibration offsets, and audit trail timestamps in portable diagnostic equipment. IC Role / Device Role / Timing Role: Secure, tamper-resistant memory holding regulatory-compliant operational history and user preferences. Use Value: Meets IEC 62304 data persistence requirements with hardware-level write protection activated at 4.5 V threshold. |
Use Scenario: Capturing incomplete transaction records (e.g., payment authorization failures) in retail terminals during grid instability or UPS depletion. IC Role / Device Role / Timing Role: High-reliability scratchpad memory capturing last-known state before power collapse. Use Value: Enables transaction recovery and reconciliation without database dependency, using byte-level random access at 70 ns speed. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1230Y-70+ | Wider VCC range (4.5–5.5 V, ±10%), lower write-protect threshold (4.25 V), same 70 ns speed and 28-pin DIP | Suitable for systems with less-regulated 5 V supplies; higher risk of inadvertent write-enable during marginal VCC | Select DS1230Y-70+ only if supply tolerance exceeds ±5%; otherwise DS1230AB-70+ provides tighter voltage margin control. |
| STK12C68-A70 | Same 256k size and 70 ns speed, but uses external battery and separate controller; no integrated lithium or freshness seal | Requires additional PCB area and discrete components; lacks automatic VCC monitoring and seamless switchover | Choose STK12C68-A70 only when long-term obsolescence mitigation is prioritized over integration and reliability. |
Compared with DS1230Y-70+, the DS1230AB-70+ offers stricter voltage supervision for safer write-lock behavior; compared with STK12C68-A70, it delivers superior system-level simplicity and field reliability via monolithic integration and guaranteed 10-year retention.
Availability
DS1230AB-70+ is available at Aetrix Electronics and suitable for real-time clock backup, industrial PLC configuration storage, and medical device setup data retention requiring stable component supply across multi-year production cycles.
Supply support for DS1230AB-70+ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and power management ICs for industrial, automotive, and computing applications.
The DS1230AB-70+ belongs to Maxim's nonvolatile SRAM product line, engineered specifically to replace volatile memory in mission-critical systems where data integrity during power interruption is non-negotiable.
FAQ
What is the guaranteed data retention period for DS1230AB-70+?
The DS1230AB-70+ guarantees a minimum 10-year data retention period in the absence of external power, measured from the time VCC is first applied. This is ensured by internal lithium cell capacity, low-leakage CMOS design, and factory-qualified component selection - not extrapolated or estimated.
Does DS1230AB-70+ require external support circuitry for microprocessor interfacing?
No, DS1230AB-70+ requires no external support circuitry. Its TTL-compatible inputs, 8-bit bidirectional data bus, and standard CE/WE/OE control interface allow direct connection to 8051, Z80, and 68000-family microprocessors without glue logic or level shifters.
How does the DS1230AB-70+ handle power failure during a write cycle?
DS1230AB-70+ continuously monitors VCC. If voltage drops below 4.5 V, it immediately disables write capability and places all outputs in high-impedance state. Address and data lines become "don't care," preventing partial or corrupted writes during brownout conditions.
Is the lithium battery in DS1230AB-70+ replaceable?
No - the DS1230AB-70+ uses a hermetically sealed 28-pin EDIP package with an integrated, non-replaceable lithium energy source. For field-replaceable battery solutions, consider the DS1230ABP-70+ PowerCap Module variant with DS9034PC+ snap-on battery cap.
What is the meaning of the "+" suffix in DS1230AB-70+?
The "+" suffix in DS1230AB-70+ indicates a lead(Pb)-free and RoHS-compliant packaging variant. It denotes compliance with EU Directive 2011/65/EU and has identical electrical, thermal, and mechanical specifications as the non-RoHS version.
DS1230AB-70+ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 28-DIP Module (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.75V ~ 5.25V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 28-EDIP
DS1230AB-70+ FAQ
1.How can I place an order for DS1230AB-70+ through Aetrix?
Please submit a Request for Quotation (RFQ) for DS1230AB-70+ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DS1230AB-70+ reliable?
The price and inventory of DS1230AB-70+ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DS1230AB-70+ is usually 5 days.
3.What payment methods are accepted for DS1230AB-70+?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DS1230AB-70+ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DS1230AB-70+?
DS1230AB-70+ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DS1230AB-70+ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DS1230AB-70+?
For technical support, including DS1230AB-70+ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DS1230AB-70+ requirements.
6.How does Aetrix verify that DS1230AB-70+ is sourced from the original manufacturer or authorized distributors?
All DS1230AB-70+ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DS1230AB-70+ meets industry standards.
7.What is the process for return or replacement of DS1230AB-70+?
All DS1230AB-70+ units undergo pre-shipment inspection (PSI). If there is an issue with DS1230AB-70+, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DS1230AB-70+ part is unused and in its original packaging.
Return procedure for DS1230AB-70+:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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