Analog Devices Inc./Maxim Integrated DS1230W-100IND+

Overview

DS1230W-100IND+ from Maxim Integrated is a 256k-bit (32k × 8) nonvolatile static RAM with integrated lithium backup, industrial temperature rating (–40°C to +85°C), 100ns access time, and JEDEC-standard 28-pin DIP package. It replaces volatile SRAM, EEPROM, or Flash in systems requiring automatic data retention during power loss, such as real-time clock registers and configuration storage.

For engineers reviewing the DS1230W-100IND+ datasheet, DS1230W-100IND+ pinout, DS1230W-100IND+ application, or DS1230W-100IND+ equivalent, key selection criteria include guaranteed 10-year data retention without external power, write-protection activation at 2.8V VCC, unlimited write cycles, low-power CMOS operation, and compatibility with standard 28-pin byte-wide memory sockets.

Technical Context

The DS1230W-100IND+ integrates SRAM, lithium battery, and voltage-monitoring control circuitry into a single monolithic module. Its internal power-switching logic detects VCC decay below 2.8V and automatically enables battery backup while asserting unconditional write protection - all without external components.

It operates as a fully static, asynchronous parallel memory with standard CE/OE/WE control signals and 15 address lines (A0–A14). The device supports read and write cycles with tACC = tWC = 100ns, tOE = 50ns, and tCO = 100ns at VCC = 3.3V ±0.3V across the full industrial temperature range.

Key Specifications

Pinout & Package

DS1230W-100IND+ uses a JEDEC-standard 28-pin Extended Dual In-line Package (740-mil width, EDIP), wave- or hand-solderable only. The package integrates SRAM, lithium cell, and control logic in one hermetically sealed unit.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with STK12C68-55I and DS1249Y-100IND+, the DS1230W-100IND+ offers optimal balance of density, 3.3V compatibility, and industrial qualification - making it the preferred choice for new 3.3V embedded systems needing proven 256k-bit nonvolatile RAM without voltage translation or footprint changes.

Availability

DS1230W-100IND+ is available at Aetrix Electronics and suitable for industrial data loggers, medical device configuration storage, and programmable logic controller (PLC) state backup requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for DS1230W-100IND+ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in precision analog, mixed-signal, and power management ICs for industrial, medical, and communications applications.

The DS1230W-100IND+ belongs to Maxim's nonvolatile SRAM product line, engineered specifically for fail-safe data retention in mission-critical systems where power interruption is common and firmware-based backup solutions are unacceptable.

FAQ

What is the guaranteed data retention period for DS1230W-100IND+ without external power?

The DS1230W-100IND+ guarantees a minimum of 10 years of data retention in the absence of external power. This specification assumes the lithium energy source is first activated upon initial VCC application (>3.0V) and accounts for cumulative time spent in battery-backup mode. The device's internal freshness seal ensures full capacity is preserved until first use, and retention is validated across the full –40°C to +85°C industrial temperature range.

Does DS1230W-100IND+ require external support circuitry for nonvolatile operation?

No, the DS1230W-100IND+ requires no external support circuitry for nonvolatile operation. It integrates the SRAM array, lithium backup battery, voltage-monitoring logic, and power-switching circuitry into a single 28-pin DIP package. Automatic write protection activates at 2.8V, and battery switchover occurs below ~2.5V - all without external capacitors, regulators, or control ICs.

Is DS1230W-100IND+ pin-compatible with standard 28-pin SRAM or EEPROM devices?

Yes, the DS1230W-100IND+ uses a JEDEC-standard 28-pin DIP footprint and matches the pinout of popular 32k × 8 volatile SRAMs and 28256 EEPROMs. Address (A0–A14), data (DQ0–DQ7), and control (CE, WE, OE, VCC, GND) signals align directly - enabling true drop-in replacement in existing sockets without PCB modification.

What is the maximum operating current of DS1230W-100IND+ during active read/write cycles?

The DS1230W-100IND+ has a maximum operating current (ICCO1) of 50mA under typical conditions (VCC = 3.3V, TA = +25°C). This value represents peak current draw during sustained read or write activity. Standby current drops to as low as 30µA when CE is inactive, making the DS1230W-100IND+ suitable for low-power hold modes during extended power-loss events.

Can DS1230W-100IND+ be used in surface-mount designs?

No, the DS1230W-100IND+ is supplied only in a 28-pin Extended DIP (EDIP) package intended for wave or hand soldering - not reflow-compatible. For surface-mount applications, the pin-compatible DS1230WP-100IND+ in the 34-pin PowerCap Module (PCM) package must be used, paired with a DS9034PCI+ PowerCap. The DS1230W-100IND+ itself cannot withstand reflow temperatures.